Organic field effect transistor

Patent metadata

Field	Value
Publication number	US-9978943-B2
Application number	US-201214361129-A
Country	US
Kind code	B2
Filing date	Dec 3, 2012
Priority date	Dec 7, 2011
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

The present invention provides an electronic component or device comprising a gate electrode, a source electrode and a drain electrode, wherein said component or device further comprising an organic semiconducting (OSC) material that is provided between the source and drain electrode, wherein the OSC material comprises (a) a polymer represented by formula: (I), and (b) a compound of formula (II). High quality OFETs can be fabricated by the choice of a semiconductor material, which is comprised of a polymer represented by formula I and (b) a compound of formula II.

First claim

The invention claimed is:

1. An electronic component or an electronic device comprising:
a gate electrode;
a source electrode; and
a drain electrode;
wherein the component or the device further comprises an organic semiconducting (OSC) material that is provided between the source electrode and the drain electrode, wherein the OSC material comprises
(a) a polymer of formula Ib:

wherein at least one of A 6 and A 7 is

 and the other of A 6 and A 7 is

s is an integer 1, or 2; t is an integer 1, or 2;
M is

v is an integer 1, 2, or 3;
R 101 and R 102 are a C 1 -C 38 alkyl group and n is 5 to 1000,
wherein the polymer of formula Ib is not a polymer of formula Ib-3:

and
(b) a compound of formula IIa:

wherein
a is 1, or 2; b is 0, or 1; c is 0, or 1;
R 1 and R 2 are the same or different and are a C 1 -C 38 alkyl group,
Ar 1 , Ar 2 and Ar 3 are each independently a bivalent group of formula

R 3 is hydrogen, cyano,

wherein the compound of formula IIa is present in said OSC material in an amount of 0.1 to 99.9% by weight based on the amount of the polymer of formula Ib and the compound of formula IIa.

2. The component or the device of claim 1 , wherein the compound of formula IIa is a compound of formula

wherein R 1 and R 2 are the same and are a C 1 -C 38 alkyl group.

3. The component or the device of claim 1 , wherein the compound of formula IIa is present in said OSC material in an amount of 5 to 95% by weight, based on the amount of the polymer of formula Ib and the compound of formula IIa.

4. A process for preparing the device of claim 1 , the process comprising:
(i) mixing one or more the of compound of formula IIa and the polymer of formula Ib, optionally with a solvent or solvent mixture,
(ii) applying the mixture or the solvent comprising the compound of formula IIa and the polymer of formula Ib to a substrate; and
optionally evaporating the solvent to form a solid OSC layer.

5. An organic layer, comprising a polymer of a formula Ib and a compound of a formula IIa

wherein at least one of A 6 and A 7 is

 and the other of A 6 and A 7 is

s is an integer 1, or 2; t is an integer 1, or 2;
M is

v is an integer 1, 2, or 3;
R 101 and R 102 are a C 1 -C 38 alkyl group and n is 5 to 1000,
wherein the polymer of formula Ib is not a polymer of formula Ib-3:

 and

wherein
a is 1, or 2; b is 0, or 1; c is 0, or 1;
R 1 and R 2 are the same or different and are a C 1 -C 38 alkyl group,
Ar 1 , Ar 2 and Ar 3 are each independently a bivalent group of formula

R 3 is hydrogen, cyano,

6. A formulation, comprising
(a) a polymer of a formula Ib,

wherein at least one of A 6 and A 7 is

 and the other of A 6 and A 7 is

s is an integer 1, or 2; t is an integer 1, or 2;
M is

v is an integer 1, 2, or 3;
R 101 and R 102 are a C 1 -C 38 alkyl group and n is 5 to 1000,
wherein the polymer of formula Ib is not a polymer of formula Ib-3:

(b) a compound of a formula IIa,

wherein
a is 1, or 2; b is 0, or 1; c is 0, or 1;
R 1 and R 2 are the same or different and are a C 1 -C 38 alkyl group,
Ar 1 , Ar 2 and Ar 3 are each independently a bivalent group of formula

R 3 is hydrogen, cyano,

 and
(c) a solvent, or solvent mixture.

7. An organic semiconductor device comprising the organic layer of claim 5 .

8. An organic layer comprising the formulation of claim 6 .

9. An apparatus, comprising the component or the device of claim 1 .

10. The component or the device of claim 4 , wherein the compound of formula IIa is a compound of formula (IIa-1).

11. The organic layer of claim 5 , wherein the organic layer is a semiconducting layer.

12. The electronic component or the electronic device of claim 1 , wherein the polymer represented by formula (Ib) is a polymer of formula

and
R 101 and R 102 are a C 1 -C 38 alkyl group, and n is 5 to 1000.

13. An electronic component or an electronic device comprising:
a gate electrode;
a source electrode; and
a drain electrode;
wherein the component or the device further comprises an organic semiconducting (OSC) material that is provided between the source electrode and the drain electrode, wherein the OSC material comprises
(a) a polymer of formula Ib:

wherein A 6 and A 7 are each independently

s is an integer 1, or 2; t is an integer 1, or 2;
M is

Assignees

• Basf Se

Inventors

• Bujard Patrice
• Chebotareva Natalia
• Weitz Thomas
• Hayoz Pascal

Classifications

• C08G2261/1412

  Saturated aliphatic units · CPC title

• C08L65/00

  Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain (C08L7/00 - C08L57/00, C08L61/00 take precedence); Compositions of derivatives of such polymers · CPC title

• C08G61/126

  with a five-membered ring containing one sulfur atom in the ring · CPC title

• C08G2261/3223

  containing one or more sulfur atoms as the only heteroatom, e.g. thiophene · CPC title

• C08G2261/344

  containing heteroatoms · CPC title