Electroconductive thin film, coating liquid for forming electroconductive thin film, field-effect transistor, and method for producing field-effect transistor

Patent metadata

Field	Value
Publication number	US-9978877-B2
Application number	US-201314382604-A
Country	US
Kind code	B2
Filing date	Mar 14, 2013
Priority date	Mar 19, 2012
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

To provide an electroconductive thin film, containing: a metal oxide containing indium and tin; and gold.

First claim

The invention claimed is:

1. A field-effect transistor, comprising:
an n-type oxide film; and
an electroconductive film in contact with the n-type oxide film of the field-effect transistor, the electroconductive film comprising:
a metal oxide containing indium and tin; and
gold particles,
wherein a number (A) of atoms of the indium, a number (B) of atoms of the tin, and a number (C) of atoms of the gold satisfy the following formula (1):
0.28≤[ C /( A+B+C )]≤0.61  Formula (1), and

wherein in the electroconductive film including the metal oxide and the gold particles, the metal oxide is constituted by metal oxide particles having an average particle diameter in a range of 10 nm to 100 nm, and the gold particles are external to the metal oxide particles and have an average particle diameter in a range of 10 nm to 100 nm, and the metal oxide particles and the gold particles external to the metal oxide particles are in contact with each other within the electroconductive film, and
wherein the gold particles external to the metal oxide particles and having the average particle diameter in the range of 10 nm to 100 nm are in contact with each other throughout the electroconductive film to form a network of the interconnected gold particles, and
wherein a surface of the electroconductive film is in contact with the n-type oxide film, and the gold particles and the metal oxide particles are present on said surface of the electroconductive film, and the gold particles present on said surface of the electroconductive film are in contact with the n-type oxide film.

2. The field-effect transistor according to claim 1 , wherein the electroconductive film is formed by a method containing:
applying, onto a support, a coating liquid for forming an electroconductive film, which contains gold, and a combination of indium and tin, a metal oxide containing indium and tin, a combination of indium oxide and tin oxide, or any combination thereof;
drying the applied coating liquid; and
baking the dried coating liquid.

3. A coating liquid for forming an electroconductive film in contact with an n-type oxide film of a field-effect transistor, comprising:
a combination of indium and tin, a metal oxide containing indium and tin, a combination of indium oxide and tin oxide, or any combination thereof;
gold particles; and
an organic solvent,
wherein a number (A) of atoms of the indium, a number (B) of atoms of the tin, and a number (C) of atoms of the gold satisfy the following formula (1):
0.28≤[ C /( A+B+C )]≤0.61  Formula (1), and

wherein in the electroconductive film including the metal oxide and the gold particles, the metal oxide is constituted by metal oxide particles having an average particle diameter in a range of 10 nm to 100 nm, and the gold particles are external to the metal oxide particles and have an average particle diameter in a range of 10 nm to 100 nm, and the metal oxide particles and the gold particles external to the metal oxide particles are in contact with each other within the electroconductive film, and
wherein the gold particles external to the metal oxide particles and having the average particle diameter in the range of 10 nm to 100 nm are in contact with each other throughout the electroconductive film to form a network of the interconnected gold particles, and
wherein a surface of the electroconductive film is in contact with the n-type oxide film, and the gold particles and the metal oxide particles are present on said surface of the electroconductive film, and the gold particles present on said surface of the electroconductive film are in contact with the n-type oxide film.

4. The field-effect transistor according to claim 1 , further comprising:
a gate electrode configured to apply gate voltage;
a source electrode and a drain electrode, both configured to extract electric current;
an active layer, which is formed of oxide semiconductor, and is formed between the source electrode and the drain electrode; and
a gate insulating layer formed between the gate electrode and the active layer,
wherein at least one of the source electrode and the drain electrode is formed of the electroconductive film.

5. An electroconductive film in contact with an n-type oxide film, comprising:
a metal oxide containing indium and tin; and
gold particles,
wherein a number (A) of atoms of the indium, a number (B) of atoms of the tin, and a number (C) of atoms of the gold satisfy the following formula (1):
0.21≤[ C /( A+B+C )]≤0.78  Formula (1), and

wherein in the electroconductive film including the metal oxide and the gold particles, the metal oxide is constituted by metal oxide particles having an average particle diameter in a range of 10 nm to 100 nm, and the gold particles are external to the metal oxide particles and have an average particle diameter in a range of 10 nm to 100 nm, and the metal oxide particles and the gold particles external to the metal oxide particles are in contact with each other within the electroconductive film, and
wherein the gold particles external to the metal oxide particles and having the average particle diameter in the range of 10 nm to 100 nm are in contact with each other throughout the electroconductive film to form a network of the interconnected gold particles, and
wherein a surface of the electroconductive film is in contact with the n-type oxide film, and the gold particles and the metal oxide particles are present on said surface of the electroconductive film, and the gold particles present on said surface of the electroconductive film are in contact with the n-type oxide film.

Assignees

• Matsumoto Shinji
• Ueda Naoyuki
• Nakamura Yuki
• Abe Yukiko
• Takada Mikiko
• Sone Yuji
• Saotome Ryoichi
• Ricoh Co Ltd

Inventors

• Matsumoto Shinji
• Ueda Naoyuki
• Nakamura Yuki
• Abe Yukiko
• Takada Mikiko
• Sone Yuji
• Saotome Ryoichi

Classifications

• H10P14/47 Primary

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10W20/4473

  Conductive organic materials, e.g. conductive adhesives or conductive inks · CPC title

• H01L27/1292

  Electricity · mapped topic

• H01L23/5328

  Electricity · mapped topic

• H01L29/45

  Electricity · mapped topic