Light emitting device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9978811-B2
Application number	US-201615064031-A
Country	US
Kind code	B2
Filing date	Mar 8, 2016
Priority date	Apr 23, 2002
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator ( 19 ) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers ( 18 c and 18 d ) of a first electrode, and a layer ( 18 b ) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer ( 20 ) is reflected by the slope of the first electrode (layers 18 c and 18 d ) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1 A.

First claim

What is claimed is:

1. A light emitting device comprising:
a transistor;
an insulating layer over the transistor;
a first electrode over the insulating layer and electrically connected to the transistor, the first electrode being capable of reflecting light;
an insulator over the first electrode, the insulator including an opening which overlaps a first portion of the first electrode, wherein a second portion of the first electrode is covered with the insulator;
a light emitting layer comprising an organic material overlapping the insulator and at least the first portion of the first electrode; and
a second electrode over the light emitting layer, wherein the second electrode is transparent so that light emitted by the light emitting layer can be output through the second electrode,
wherein the first portion of the first electrode is thinner than the second portion of the second electrode,
wherein an inner edge of the insulator is aligned with a boundary between the first portion and the second portion.

2. The light emitting device according to claim 1 , wherein the first electrode comprises a film mainly comprising aluminum.

3. The light emitting device according to claim 1 , wherein the first electrode comprises a first film mainly comprising titanium and a second film mainly comprising aluminum.

4. The light emitting device according to claim 1 , wherein the light emitting layer is capable of emitting white light.

5. The light emitting device according to claim 1 , wherein the transistor is a thin film transistor which comprises a channel forming region which comprises polycrystalline silicon.

6. The light emitting device according to claim 1 , wherein the insulator comprises a resin.

7. A light emitting device comprising:
a transistor;
an insulating layer over the transistor;
a first electrode over the insulating layer and electrically connected to the transistor, the first electrode being capable of reflecting light;
an insulator over the first electrode, the insulator including an opening which overlaps a first portion of the first electrode, wherein a second portion of the first electrode is covered with the insulator;
a light emitting layer comprising an organic material overlapping the insulator and at least the first portion of the first electrode; and
a second electrode over the light emitting layer, wherein the second electrode is transparent so that light emitted by the light emitting layer can be output through the second electrode,
wherein the first electrode has a multi-layer structure comprising a first conductive layer and a second conductive layer over the first conductive layer, and
wherein an inner side surface of the insulator is coplanar with a side surface of the second conductive layer.

8. The light emitting device according to claim 7 , further comprising an auxiliary electrode on the second electrode.

9. The light emitting device according to claim 7 , wherein the light emitting layer is capable of emitting white light.

10. The light emitting device according to claim 7 , wherein the transistor is a thin film transistor which comprises a channel forming region which comprises polycrystalline silicon.

11. The light emitting device according to claim 7 , wherein the insulator comprises a resin.

12. The light emitting device according to claim 7 , wherein the first conductive layer comprises titanium nitride, tantalum nitride, molybdenum nitride, platinum, chromium, tungsten, nickel, zinc and tin.

13. The light emitting device according to claim 7 , wherein the second conductive layer comprises aluminum or silver.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Seo Satoshi
• Kuwabara Hideaki

Classifications

• H01L51/5234

  Electricity · mapped topic

• H01L51/5271

  Electricity · mapped topic

• H01L27/322

  Electricity · mapped topic

• H01L51/5253

  Electricity · mapped topic

• H01L51/5209

  Electricity · mapped topic