Multi-spectral photodetector with light-sensing regions having different heights and no color filter layer

US9978801B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9978801-B2
Application numberUS-201514808368-A
CountryUS
Kind codeB2
Filing dateJul 24, 2015
Priority dateJul 25, 2014
Publication dateMay 22, 2018
Grant dateMay 22, 2018

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Abstract

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In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode. The first pixel region is configured to detect light in a first spectral band and the second pixel region is configured to detect light in a second spectral band. The first and second spectral bands include an overlapping spectral range. The second spectral band also includes a spectral range that is substantially undetectable by the first pixel region. Other image sensors and methods of making images sensors are also disclosed.

First claim

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What is claimed is: 1. An image sensor, comprising: a first pixel region comprising a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode; a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode; wherein the first pixel region is configured to detect light in a first spectral band; wherein the second pixel region is configured to detect light in a second spectral band; and wherein the first and second spectral bands include an overlapping spectral range, and the second spectral band also includes a spectral range that is substantially undetectable by the first pixel region; and a transparent material formed only over the first pixel region so as to planarize a surface of the image sensor. 2. The image sensor of claim 1 , wherein the optically sensitive material comprises at least one semiconductor nanoparticle. 3. The image sensor of claim 1 , wherein the first spectral band includes the range of about 450 nm to about 490 nm and the second spectral band includes the range of about 450 nm to about 570 nm. 4. The image sensor of claim 1 , wherein the first spectral band includes the range of about 450 nm to about 570 nm and the second spectral band includes the range of about 450 nm to about 630 nm. 5. The image sensor of claim 1 , wherein the first spectral band includes the range of about 450 nm to about 630 nm and the second spectral band includes the range of about 450 nm to about 960 nm. 6. The image sensor of claim 1 , wherein the first spectral band includes the range of about 450 nm to about 960 nm and the second spectral band includes the range of about 450 nm to about 1600 nm. 7. The image sensor of claim 1 , wherein the transparent material is configured to induce internal reflection of light toward at least the first pixel region.

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What does patent US9978801B2 cover?
In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, …
Who is the assignee on this patent?
Invisage Technologies Inc
What technology area does this patent fall under?
Primary CPC classification H01L27/14645. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 22 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).