Image sensor and manufacturing process thereof
US-2024347559-A1 · Oct 17, 2024 · US
US9978801B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9978801-B2 |
| Application number | US-201514808368-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 24, 2015 |
| Priority date | Jul 25, 2014 |
| Publication date | May 22, 2018 |
| Grant date | May 22, 2018 |
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In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode. The first pixel region is configured to detect light in a first spectral band and the second pixel region is configured to detect light in a second spectral band. The first and second spectral bands include an overlapping spectral range. The second spectral band also includes a spectral range that is substantially undetectable by the first pixel region. Other image sensors and methods of making images sensors are also disclosed.
Opening claim text (preview).
What is claimed is: 1. An image sensor, comprising: a first pixel region comprising a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode; a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode; wherein the first pixel region is configured to detect light in a first spectral band; wherein the second pixel region is configured to detect light in a second spectral band; and wherein the first and second spectral bands include an overlapping spectral range, and the second spectral band also includes a spectral range that is substantially undetectable by the first pixel region; and a transparent material formed only over the first pixel region so as to planarize a surface of the image sensor. 2. The image sensor of claim 1 , wherein the optically sensitive material comprises at least one semiconductor nanoparticle. 3. The image sensor of claim 1 , wherein the first spectral band includes the range of about 450 nm to about 490 nm and the second spectral band includes the range of about 450 nm to about 570 nm. 4. The image sensor of claim 1 , wherein the first spectral band includes the range of about 450 nm to about 570 nm and the second spectral band includes the range of about 450 nm to about 630 nm. 5. The image sensor of claim 1 , wherein the first spectral band includes the range of about 450 nm to about 630 nm and the second spectral band includes the range of about 450 nm to about 960 nm. 6. The image sensor of claim 1 , wherein the first spectral band includes the range of about 450 nm to about 960 nm and the second spectral band includes the range of about 450 nm to about 1600 nm. 7. The image sensor of claim 1 , wherein the transparent material is configured to induce internal reflection of light toward at least the first pixel region.
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