Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
US9978732B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9978732-B2 |
| Application number | US-201514864643-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 24, 2015 |
| Priority date | Sep 30, 2014 |
| Publication date | May 22, 2018 |
| Grant date | May 22, 2018 |
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In an embodiment, an apparatus includes a packaging substrate and a die on the packaging substrate. The die includes an integrated passive device and a contact providing an electrical connection to the integrated passive device. A conductive trace of the packaging substrate is in an electrical path between the contact of the die and a ground potential. Such an integrated passive device and conductive trace can be included in a matching network configured to receive an amplified radio frequency signal from a power amplifier, for example. The packaging substrate can be, for example, a laminate substrate.
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What is claimed is: 1. A module having an integrated passive device, the module comprising: a packaging substrate; a die on the packaging substrate, the die including an integrated capacitor, a transformer, a second integrated capacitor coupled to a terminal of the transformer that is configured to receive a supply voltage, and a contact providing an electrical connection to the integrated capacitor; a conductive trace of the packaging substrate, the conductive trace being in an electrical path between the contact of the die and a ground potential, the conductive trace and the transformer and the integrated capacitor being included in a matching network that is configured to receive a radio frequency signal, and a capacitance of the integrated capacitor and an inductance of the conductive trace together being configured to provide a frequency trap at a harmonic frequency of the radio frequency signal; and a second conductive trace of the packaging substrate, the second conductive trace being arranged in series with the second integrated capacitor. 2. The module of claim 1 wherein the packaging substrate includes a laminate and the conductive trace is in the laminate. 3. The module of claim 1 further comprising a third conductive trace and a third integrated capacitor of the die that are together configured to provide another frequency trap at a different harmonic frequency of the radio frequency signal. 4. The module of claim 1 wherein the inductance of the conductive trace corresponds to a length of the conductive trace. 5. The module of claim 1 further comprising a power amplifier die on the packaging substrate, the power amplifier die including a power amplifier configured to provide the radio frequency signal to the matching network. 6. The module of claim 1 wherein the contact of the die is a bump pad and the die is flip chip mounted on the packaging substrate. 7. The module of claim 6 wherein at least a portion of the conductive trace is disposed below a footprint of the die. 8. The module of claim 1 wherein the conductive trace has a length of at least 100 microns. 9. The module of claim 1 wherein the conductive trace is substantially spiral shaped in plan view. 10. The module of claim 1 wherein the die is a silicon die. 11. The module of claim 1 wherein the conductive trace includes copper. 12. A module with integrated passive devices, the module comprising: a packaging substrate; a die on the packaging substrate, the die including a transformer, capacitors that include an integrated capacitor, and a contact providing an electrical connection to the integrated capacitor; and conductive traces including a conductive trace of the packaging substrate, the capacitors being configured to resonate with the conductive traces and a residual inductance of a secondary coil of the transformer to create an elliptic filter, the conductive trace being in an electrical path between the contact of the die and a ground potential, a capacitance of the integrated capacitor and an inductance of the conductive trace together being configured to provide a frequency trap at a harmonic frequency of the radio frequency signal, and the conductive trace, the transformer, and the integrated capacitor being included in a matching network that is configured to receive a radio frequency signal. 13. The module of claim 12 wherein the conductive traces include a second conductive trace of the packaging substrate and a third conductive trace of the packaging substrate, and the capacitors include a second integrated capacitor in series with the second conductive trace and a third integrated capacitor in series with the third conductive trace. 14. The module of claim 12 wherein the capacitors include a second integrated capacitor that is coupled to a terminal of the transformer that is configured to receive a supply voltage. 15. A power amplifier system comprising: a first die on a laminate substrate, the first die including a power amplifier configured to receive a radio frequency input signal and provide an amplified radio frequency signal; a second die on the laminate substrate, the second die configured to receive the amplified radio frequency signal, the second die including an integrated capacitor, a transformer connected to an output of the power amplifier, and a second integrated capacitor coupled to a terminal of the transformer that is configured to receive a supply voltage of the second die; a conductive trace of the laminate substrate, the conductive trace being in an electrical path between the integrated capacitor and a ground potential, an impedance of the conductive trace being configured to resonate the integrated capacitor at a harmonic frequency of the amplified radio frequency signal; and a second conductive trace of the laminate substrate, the second conductive trace being arranged in series with the second integrated capacitor. 16. The power amplifier system of claim 15 wherein the conductive trace is substantially spiral shaped in plan view. 17. The power amplifier system of claim 15 wherein a length of the conductive trace is at least 100 microns, and the impedance of the conductive trace corresponds to the length of the conductive trace. 18. The power amplifier system of claim 15 wherein the transformer, the integrated capacitor, and the conductive trace are included in a matching network configured to provide impedance transformation and an elliptic filter. 19. The power amplifier system of claim 15 further comprising a third conductive trace of the laminate substrate, the second die further including a third integrated capacitor, an inductance of the third conductive trace configured to resonate the third integrated capacitor at different harmonic frequency of the radio frequency signal than the harmonic frequency of the radio frequency signal. 20. A mobile device comprising: a multi-chip module including (i) a power amplifier die on a laminate substrate, the power amplifier die including a power amplifier configured to receive a radio frequency input signal and provide an amplified radio frequency signal; (ii) an integrated passive device die on the laminate substrate, the integrated passive device die including an integrated capacitor a transformer configured to receive the amplified radio frequency signal, and a second integrated capacitor coupled to a terminal of the transformer that is coupled to a power supply contact of the integrated passive device die; (iii) a conductive trace of the laminate substrate, the conductive trace being in series between the integrated capacitor and a ground potential, the conductive trace and the integrated capacitor together being configured to provide a frequency trap at a harmonic frequency of the amplified radio frequency signal; and (iv) a second conductive trace of the laminate substrate, the second conductive trace being in series with the second integrated capacitor; an antenna configured to receive a processed version of the amplified radio frequency signal from the integrated passive device die; and a battery configured to provide a supply voltage to the multi-chip module. 21. The mobile device of claim 20 wherein the mobile device is a cellular phone and the multi-chip module is a multi-band module.
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