Method of manufacturing semiconductor device and wire bonding apparatus

Patent metadata

Field	Value
Publication number	US-9978713-B2
Application number	US-201615232828-A
Country	US
Kind code	B2
Filing date	Aug 10, 2016
Priority date	Feb 10, 2014
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A method of manufacturing a semiconductor device includes: a wire tail forming step of forming a wire loop 130 between a first bonding point and a second bonding point with a bonding tool 40 , and then cutting a portion of a wire 42 extending from a tip of the bonding tool 40 to thereby form a wire tail 43 at the tip of the bonding tool 40 ; and a wire tail bending step of bending the wire tail 43 so as to direct a tip 43 a of the wire tail 43 upward by descending the bonding tool 40 toward the second bonding point with the wire loop 130 formed thereat and pressing the wire tail 43 against a portion of the wire loop 130 located above the second bonding point. Thus, the wire tail can be bent easily and efficiently.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor device, comprising:
a wire tail forming step of forming a wire loop between a first bonding point and a second bonding point with a bonding tool, and then cutting a portion of a wire extending from a tip of the bonding tool, to thereby form a wire tail at the tip of the bonding tool; and
a wire tail bending step of bending the wire tail so as to direct a tip of the wire tail upward by descending the bonding tool toward the second bonding point with the wire loop formed thereat and pressing the wire tail against a portion of the wire loop located above the second bonding point.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein
in the wire tail bending step, the wire tail is pressed against the portion of the wire loop located above the latest second bonding point.

3. The method of manufacturing a semiconductor device according to claim 1 , wherein
in the wire tail bending step, the wire tail is pressed against a tip of the wire loop located above the second bonding point.

4. The method of manufacturing a semiconductor device according to claim 1 , wherein
in the wire tail bending step, the wire tail is pressed against a rising portion of the wire loop located above the second bonding point.

5. The method of manufacturing a semiconductor device according to claim 1 , wherein
in the wire tail forming step, the portion of the wire is cut by ascending the bonding tool while paying out the wire and moving the bonding tool in a direction away from the wire loop.

Assignees

• Shinkawa Kk

Inventors

• Sekine Naoki
• Nakazawa Motoki

Classifications

• H10W72/07533

  Ultrasonic bonding, e.g. thermosonic bonding · CPC title

• H10W72/07532

  Compression bonding, e.g. thermocompression bonding · CPC title

• H10W72/07502

  using an auxiliary member · CPC title

• H10W72/07183

  Means for monitoring · CPC title

• H10W72/07168

  Means for storing or moving the material for the connector · CPC title