Oxide material and semiconductor device
US-2024395942-A1 · Nov 28, 2024 · US
US9978591B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9978591-B2 |
| Application number | US-201314395339-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 26, 2013 |
| Priority date | Apr 17, 2012 |
| Publication date | May 22, 2018 |
| Grant date | May 22, 2018 |
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The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3 rd primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.
Opening claim text (preview).
The invention claimed is: 1. An ammoniacal formulation, comprising: a) a hydroxozinc compound, and b) at least two compounds of main group 3 elements wherein the hydroxozinc compound is Zn(OH) x (NH 3 ) y (2-x)+ , where 1≤x≤2 and 1≤v ≤6, wherein the at least two compounds of the main group 3 elements are a gallium compound and an indium compound, and wherein the formulation comprises, based on a total amount of zinc and the main group 3 elements, from 65-75 mol % of the hydroxozinc compound, from 25-34 mol % of the gallium compound, and from 1-10 mol % of the indium compound. 2. The formulation according to claim 1 , which is obtained by a process comprising a) dissolving nitrate salts of zinc and at least two main group 3 elements in a trivalent oxidation state in a solvent, b) precipitating a hydroxide-containing solid with a hydroxide base, c) removing the solvent, thereby obtaining a precipitate, and d) taking up the precipitate in ammoniacal water. 3. A process for producing a ZnO-containing layer, the process comprising: applying the formulation according to claim 1 to a substrate, and then thermally converting the formulation, thereby obtaining the ZnO-containing layer. 4. A process for producing an electronic component, the process comprising: employing the formulation according to claim 1 to produce the electronic component. 5. An electronic component, comprising a ZnO-containing layer produced by the process according to claim 3 . 6. The electronic component according to claim 5 , which is a transistor. 7. The electronic component according to claim 5 , which is an optoelectronic component. 8. The electronic component according to claim 5 , which is a sensor.
Oxides · CPC title
using solutions · CPC title
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
the conductive material comprising metals or alloys · CPC title
mainly consisting of other non-metallic substances · CPC title
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