Apparatus and method for treating substrate

Patent metadata

Field	Value
Publication number	US-9978584-B2
Application number	US-201615251760-A
Country	US
Kind code	B2
Filing date	Aug 30, 2016
Priority date	Jul 11, 2016
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A method for treating a substrate, in which a supercritical fluid is supplied into a chamber, in which the substrate is carried, to treat the substrate, the method including a supply step of supplying the supercritical fluid into the chamber until a pressure of the interior of the chamber reaches a preset pressure, and a substrate treating step of performing a supercritical process while repeating supply and exhaust of the supercritical fluid into and out of the interior of the chamber after the supply step, wherein a flow rate of the supercritical fluid supplied into the chamber in the supply step is variable.

First claim

What is claimed is:

1. A method for treating a substrate, in which a supercritical fluid is supplied into a chamber, in which the substrate is carried, to treat the substrate, the method comprising:
a supply step of supplying the supercritical fluid into the chamber until a pressure of an interior of the chamber reaches a preset pressure; and
a substrate treating step of performing a supercritical process while repeating supply and exhaust of the supercritical fluid into and out of the interior of the chamber after the supply step,
wherein a flow rate of the supercritical fluid supplied into the chamber in the supply step is variable, and
wherein the flow rate of the supercritical fluid supplied in the supply step is varied by one or more fixed control lines that are provided with orifices having different opening sizes.

2. The method of claim 1 , wherein the flow rate of the supercritical fluid supplied in the supply step is varied by a variable control line provided with a valve that is connected in parallel to the fixed control line to control flow rate and the fixed control line.

3. The method of claim 1 , wherein the flow rate of the supercritical fluid supplied in the supply step is varied by a regulator that is provided on a supply line through which the supercritical fluid is supplied.

4. The method of claim 1 , wherein the supply step comprises:
a first supply step of supplying the supercritical fluid into the chamber until a pressure of the interior of the chamber reaches a first preset pressure; and
a second supply step of supplying the supercritical fluid into the interior of the chamber until the pressure of the interior of the chamber reaches a second preset pressure after the first supply step, and
wherein a first flow rate of the supercritical fluid supplied in the first supply step is higher than a second flow rate of the supercritical fluid supplied in the second supply step.

5. The method of claim 4 , wherein at least one of the first flow rate and the second flow rate varies over time.

6. The method of claim 4 , wherein the first preset pressure is a critical pressure of the supercritical fluid.

7. The method of claim 4 , wherein the supercritical fluid is carbon dioxide, and the first preset pressure is 100 bar to 120 bar.

8. A method for treating a substrate, in which a supercritical fluid is supplied into a chamber, in which the substrate is carried, to treat the substrate, the method comprising:
a supply step of supplying the supercritical fluid into the chamber until a pressure of the interior of the chamber reaches a preset pressure; and
a substrate treating step of performing a supercritical process in the interior of the chamber after the supply step,
wherein a flow rate of the supercritical fluid supplied into the chamber in the supply step is variable, and
wherein the flow rate of the supercritical fluid supplied in the supply step is varied by one or more fixed control lines that are provided with orifices having different opening sizes.

9. The method of claim 8 , wherein the flow rate of the supercritical fluid supplied in the supply step is varied by a variable control line provided with a valve that is connected in parallel to the fixed control line to control flow rate and the fixed control line.

10. The method of claim 8 , wherein the supply step comprises:
a first supply step of supplying the supercritical fluid into the chamber until a pressure of the interior of the chamber reaches a first preset pressure; and
a second supply step of supplying the supercritical fluid into the interior of the chamber until the pressure of the interior of the chamber reaches a second preset pressure after the first supply step, and
wherein a first flow rate of the supercritical fluid supplied in the first supply step is higher than a second flow rate of the supercritical fluid supplied in the second supply step.

11. The method of claim 10 , wherein at least one of the first flow rate and the second flow rate varies over time.

12. The method of claim 10 , wherein the first preset pressure is a critical pressure of the supercritical fluid.

Assignees

• Semes Co Ltd

Inventors

• Lee Young Hun
• Lim Eui Sang
• Cho Min Jun
• Lee Jae Myoung

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P72/0408

  for drying · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P70/12

  by dry cleaning only (H10P70/52 takes precedence) · CPC title