Resist overlayer film forming composition and method for producing semiconductor device including the same

Patent metadata

Field	Value
Publication number	US-9977331-B2
Application number	US-201515119209-A
Country	US
Kind code	B2
Filing date	Feb 13, 2015
Priority date	Feb 26, 2014
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A resist overlayer film forming composition for use in a lithography process in semiconductor device production does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and can be developed with a developer after exposure. A resist overlayer film forming composition includes: a polymer (P) including unit structures of Formula (1) and Formula (2) and having a weight average molecular weight, measured by gel permeation chromatography, of 500 to 2,000; and a C 8-16 ether compound as a solvent

First claim

The invention claimed is:

1. A resist overlayer film forming composition comprising:
a polymer (P) including unit structures of Formula (1) and Formula (2) and having a weight average molecular weight, measured by gel permeation chromatography, of 500 to 2,000; and
a C 8-16 ether compound as a solvent:

[in Formula (1) or Formula (2),
R 1 and R 2 are the same or different and are each a hydrogen atom or a C 1-10 alkyl group;
Q 1 and Q 2 are the same or different and are each a single bond, an ester bond (—C(═O)—O— or —O—C(═O)—), or an amide bond (—NH—CO— or —CO—NH—);
X 2 is a single bond, a C 1-6 alkylene group, or a C 6-14 arylene group;
R 1a is a C 1-10 alkyl group;
n1 is an integer of 1 to 3; and m1 is an integer of 0 to 2].

2. The composition according to claim 1 , wherein the polymer (P) further includes a unit structure of Formula (3):

[in Formula (3),
R 3 is a hydrogen atom or a C 1-10 alkyl group;
Q 3 is a single bond, an ester bond (—C(═O)—O— or —O—C(═O)—), or an amide bond (—NH—CO— or —CO—NH—);
X 3 is a single bond, a C 1-6 alkylene group, or a C 6-14 arylene group; and
R 3a s are the same or different and are each a hydrogen atom, a C 1-10 alkyl group, or a C 1-4 acyl group].

3. The composition according to claim 1 , wherein the polymer (P) further includes a unit structure of Formula (4):

[in Formula (4),
R 4 is a hydrogen atom or a C 1-10 alkyl group;
Q 4 is a single bond, an ester bond (—C(═O)—O— or —O—C(═O)—), or an amide bond (—NH—CO— or —CO—NH—); and
R 4a is (i) a C 1-10 alkyl group in which some or all of hydrogen atoms are optionally substituted with fluorine atoms, or (ii) a C 6-14 aryl group in which some or all of hydrogen atoms of the C 6-14 aryl group are optionally substituted with a C 1-10 alkyl group in which some or all of hydrogen atoms of the C 1-10 alkyl group are optionally substituted with fluorine atoms].

4. The composition according to claim 2 , wherein the polymer (P) further includes a unit structure of Formula (4):

[in Formula (4),
R 4 is a hydrogen atom or a C 1-10 alkyl group;
Q 4 is a single bond, an ester bond (—C(═O)—O— or —O—C(═O)—), or an amide bond (—NH—CO— or —CO—NH—); and
R 4a is (i) a C 1-10 alkyl group in which some or all of hydrogen atoms are optionally substituted with fluorine atoms, or (ii) a C 6-14 aryl group in which some or all of hydrogen atoms of the C 6-14 aryl group are optionally substituted with a C 1-10 alkyl group in which some or all of hydrogen atoms of the C 1-10 alkyl group are optionally substituted with fluorine atoms].

5. The composition according to claim 3 , wherein the R 4a is a monovalent group of Formula (5):

[in Formula (5),
W 1 and W 2 are the same or different and are each a hydrogen atom, a fluorine atom, a trifluoromethyl group, a difluoromethyl group, or a monofluoromethyl group; three w 3 s are each independently a hydrogen atom, a fluorine atom, or a combination of the hydrogen atom and the fluorine atom; at least one of W 1 , W 2 , and w 3 is a trifluoromethyl group, a difluoromethyl group, a monofluoromethyl group, or a fluorine atom; m2 is an integer of 0 to 9; and the maximum number of carbon atoms included in Formula (5) is 10].

6. The composition according to claim 1 , wherein the ether compound is dibutyl ether, diisoamyl ether, diisobutyl ether, or a combination of dibutyl ether, diisoamyl ether, and diisobutyl ether.

7. The composition according to claim 1 , wherein the ether compound has a proportion, in the solvent, of not less than 87% by mass and not more than 100% by mass.

8. The composition according to claim 1 , further comprising a separate acid compound or a separate acid generator compound, to adjust an acidity of the composition.

9. The composition according to claim 8 , wherein the acid compound is a sulfonic acid compound or a sulfonic acid ester compound.

10. The composition according to claim 8 , wherein the acid compound is an onium salt acid generator, a halogen-containing compound acid generator, or a sulfonic acid acid generator.

11. The composition according to claim 1 , further comprising a basic compound.

12. A method for producing a semiconductor device, the method comprising: forming a resist film on a substrate;
applying the resist overlayer film forming composition as claimed in claim 1 on the resist film and baking the composition to form a resist overlayer film;
exposing the semiconductor substrate covered with the resist overlayer film and the resist film to an exposure light; and
developing a pattern on the substrate after exposure by removing the resist overlayer film and the resist film.

13. The method according to claim 12 , wherein the exposure is performed with EUV light (wavelength of 13.5 nm).

14. A method for forming a resist pattern for use in production of a semiconductor device, the method comprising applying the resist overlayer film forming composition as claimed in claim 1 on a resist film formed on a semiconductor substrate and baking the composition to form a resist overlayer film.

15. A method for producing the resist overlayer film forming composition as claimed in claim 1 , the method comprising mixing the polymer (P) and a C 8-16 ether compound as a solvent.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Fujitani Noriaki
• Sakamoto Rikimaru

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• C08F220/06

  Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• C08F212/12

  Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical · CPC title