Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9977186-B2
Application number	US-201615186610-A
Country	US
Kind code	B2
Filing date	Jun 20, 2016
Priority date	Jul 30, 2015
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A semiconductor device including an optical waveguide and a p-type semiconductor portion is configured as follows. The optical waveguide includes: a first semiconductor layer formed on an insulating layer; an insulating layer formed on the first semiconductor layer; and a second semiconductor layer formed on the insulating layer. The p-type semiconductor portion includes the first semiconductor layer. The film thickness of the p-type semiconductor portion is smaller than that of the optical waveguide. By forming the insulating layer between the first semiconductor layer and the second semiconductor layer, control of the film thicknesses of the optical waveguide and the p-type semiconductor portion is facilitated. Specifically, when the unnecessary second semiconductor layer is removed by etching in a step of forming the p-type semiconductor portion, the insulating layer which is the lower layer functions as an etching stopper, and the film thickness of the p-type semiconductor portion can be easily adjusted.

First claim

What is claimed is:

1. A semiconductor device having an optical waveguide and comprising:
a basic body;
a first insulating layer formed on the basic body;
a first semiconductor layer formed on the first insulating layer and having an intrinsic portion, a p-type portion, and an n-type portion, the p-type and n-type portions being respectively disposed at opposite sides of the intrinsic portion;
a relatively thin second insulating layer formed on the intrinsic portion, the p-type portion, and the n-type portion of the first semiconductor layer; and
a second semiconductor layer formed on at least a portion of the second insulating layer formed on the intrinsic portion of the first semiconductor layer;
wherein the optical waveguide includes:
the intrinsic portion of the first semiconductor layer,
a portion of the second insulating layer on the intrinsic portion of the first semiconductor layer, and
the second semiconductor layer on the portion of the second insulating layer.

2. The semiconductor device according to claim 1 , wherein
the first semiconductor layer and the second semiconductor layer are made of silicon, and
the second insulating layer comprises a film selected from the group consisting of a silicon oxide film, a silicon oxynitride film, and a silicon nitride film.

3. A semiconductor device having an optical waveguide and a functional film connected to the optical waveguide, the semiconductor device comprising:
a basic body;
a first insulating layer formed on the basic body;
a first semiconductor layer formed on the first insulating layer;
a relatively thin second insulating layer formed on the first semiconductor layer; and
a second semiconductor layer formed on the second insulating layer,
wherein the optical waveguide and the functional film each include respective portions of first semiconductor layer, the second insulating layer, and the second semiconductor layer,
wherein a portion of the first semiconductor layer in the optical waveguide is intrinsic, and
wherein the portions of the first semiconductor layer, the second insulating layer, and the second semiconductor layer in the functional film are configured such that the functional film has a convex portion and a concave portion of smaller film thickness than the convex portion.

4. The semiconductor device according to claim 3 , wherein the concave portion includes a recess extending into at least the second semiconductor layer.

5. The semiconductor device according to claim 4 , wherein the recess extends into both the second semiconductor layer and the second insulating layer.

6. The semiconductor device according to claim 3 , wherein the portions of the first semiconductor layer, the second insulating layer and the second semiconductor layer in the functional film are configured to form a grating coupler having, in a plan view, a plurality of linear ribs arranged alternately with a plurality of linear recesses.

7. The semiconductor device according to claim 3 , wherein the functional film is a light input portion.

8. The semiconductor device according to claim 3 , wherein the functional film is a light output portion.

9. The semiconductor device according to claim 3 , wherein each of the first semiconductor layer and the second semiconductor layer is made of silicon.

10. The semiconductor device according to claim 3 , wherein the second insulating layer comprises a film selected from the group consisting of a silicon oxide film, a silicon oxynitride film, and a silicon nitride film.

Assignees

• Renesas Electronics Corp

Inventors

• Nakashiba Yasutaka
• Watanuki Shinichi

Classifications

• G02B6/122 Primary

  Basic optical elements, e.g. light-guiding paths · CPC title

• G02B2006/12097

  Ridge, rib or the like · CPC title

• G02F1/025

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02B2006/12061

  Silicon · CPC title

• G02F1/225 Primary

  in an optical waveguide structure · CPC title