Semiconductor arrangement and formation thereof

Patent metadata

Field	Value
Publication number	US-9976983-B2
Application number	US-201414200148-A
Country	US
Kind code	B2
Filing date	Mar 7, 2014
Priority date	Mar 7, 2014
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes an electro-wetting-on-dielectric (EWOD) device. The EWOD device includes a top portion over a bottom portion and a channel gap between the top portion and the bottom portion. The bottom portion includes a driving dielectric layer over a first electrode, a second electrode and a first separating portion of an ILD layer between the first electrode and a second electrode. The driving dielectric layer has a first thickness less than about 1,000 Å. An EWOD device with a driving dielectric layer having a first thickness less 1000 Å requires a lower applied voltage to alter a shape of a droplet within the device and has a longer operating life than an EWOD device that requires a higher applied voltage to alter the shape of the droplet.

First claim

What is claimed is:

1. A semiconductor arrangement comprising:
a first substrate;
a dielectric layer over the first substrate, wherein a surface of the dielectric layer interfaces with a surface of the first substrate;
a metal contact having a bottom surface in contact with the dielectric layer and a top surface in contact with the dielectric layer;
a first electrode and a second electrode in the dielectric layer, wherein:
the first electrode is separated from the second electrode by a first separating portion of the dielectric layer, and
a via extends between the metal contact and the first electrode to electrically couple the first electrode to the metal contact; and

a driving dielectric layer over and in contact with the first electrode, the second electrode and the first separating portion.

2. The semiconductor arrangement of claim 1 , the driving dielectric layer having a first thickness less than about 1,000 Å.

3. The semiconductor arrangement of claim 1 , comprising:
a first hydrophobic layer over the driving dielectric layer.

4. The semiconductor arrangement of claim 3 , the first hydrophobic layer comprising at least one of polytetrafluoroethylene or a self assembled monolayer.

5. The semiconductor arrangement of claim 3 , comprising:
a second hydrophobic layer over the first hydrophobic layer, wherein the second hydrophobic layer is separated from the first hydrophobic layer by a channel gap.

6. The semiconductor arrangement of claim 5 , comprising:
a reference dielectric layer over the second hydrophobic layer; and
a reference electrode over the reference dielectric layer.

7. The semiconductor arrangement of claim 1 , wherein the first electrode has a first width and the metal contact has a second width less than the first width.

8. The semiconductor arrangement of claim 1 , comprising:
a switch coupled to the bottom surface of the metal contact through the first substrate.

9. The semiconductor arrangement of claim 8 , wherein:
the switch is configured to selectively couple the first electrode and the second electrode to a voltage source.

10. The semiconductor arrangement of claim 1 , the first separating portion having a first width between about 50 nm to about 300 nm.

11. A semiconductor arrangement comprising:
a bottom portion, the bottom portion comprising:
a first substrate;
a dielectric layer over the first substrate, wherein a surface of the dielectric layer interfaces with a surface of the first substrate;
a metal contact in the dielectric layer, wherein the metal contact has a first width;
a first electrode and a second electrode in the dielectric layer, wherein:
the first electrode has a second width greater than the first width,
the first electrode is separated from the second electrode by a first separating portion of the dielectric layer, and
a via extends between the metal contact and the first electrode to electrically couple the first electrode to the metal contact;

a driving dielectric layer over and in contact with the first electrode, the second electrode and the first separating portion; and
a first hydrophobic layer over the driving dielectric layer; and

a top portion, the top portion comprising:
a second hydrophobic layer over and separated from the first hydrophobic layer by a channel gap;
a reference dielectric layer over the second hydrophobic layer; and
a reference electrode over the reference dielectric layer.

12. The semiconductor arrangement of claim 11 , the driving dielectric layer having a first thickness less than about 1,000 Å.

13. The semiconductor arrangement of claim 11 , wherein:
the first electrode has a first electrode height and the second electrode has a second electrode height; and
the first separating portion has a first separating portion height, at least one of the first electrode height or the second electrode height equal to the first separating portion height.

14. A semiconductor arrangement comprising:
a hydrophobic layer defining a first surface of a fluidic channel gap;
a driving dielectric layer underlying the hydrophobic layer;
a first set of electrodes underlying the driving dielectric layer;
a dielectric layer underlying the driving dielectric layer, underlying the first set of electrodes, and further disposed between a first electrode of the first set of electrodes and a second electrode of the first set of electrodes;
a metal contact underlying the first electrode, wherein the metal contact is electrically coupled to the first electrode by a via extending through the dielectric layer; and
a substrate underlying the dielectric layer and interfacing with the dielectric layer, wherein the metal contact is spaced apart from the substrate by the dielectric layer.

15. The semiconductor arrangement of claim 14 , wherein a top surface of the first electrode, a top surface of the second electrode, and a top surface of the dielectric layer are in contact with the driving dielectric layer.

16. The semiconductor arrangement of claim 14 , wherein a k-value of the driving dielectric layer is greater than a k-value of the dielectric layer.

17. The semiconductor arrangement of claim 14 , comprising:
a second hydrophobic layer defining a second surface of a fluidic channel gap;
a reference dielectric layer overlying the second hydrophobic layer; and
a reference electrode overlying the reference dielectric layer.

18. The semiconductor arrangement of claim 17 , wherein the reference electrode overlies the first electrode and the second electrode.

19. The semiconductor arrangement of claim 17 , comprising a voltage source, wherein a first terminal of the voltage source is coupled to the reference electrode and a second terminal of the voltage source is selectively coupled to first electrode and the second electrode.

20. The semiconductor arrangement of claim 14 , wherein a top surface of the dielectric layer is co-planar with a top surface of the first electrode and a top surface of the second electrode.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chang Yi-Hsien
• Cheng Chun-Ren

Classifications

• B81B2203/04

  Electrodes · CPC title

• B01L3/502792

  for moving individual droplets on a plate, e.g. by locally altering surface tension · CPC title

• G01N27/447 Primary

  using electrophoresis · CPC title

• B81C2201/0121

  involving addition of material followed by removal of parts of said material, i.e. subtractive planarization · CPC title

• B81C1/00126 Primary

  Static structures not provided for in groups B81C1/00031 - B81C1/00119 · CPC title