Diffusion bonded plasma resisted chemical vapor deposition (CVD) chamber heater

Patent metadata

Field	Value
Publication number	US-9975320-B2
Application number	US-201414153729-A
Country	US
Kind code	B2
Filing date	Jan 13, 2014
Priority date	Jan 13, 2014
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

Embodiments of the disclosure generally relate to heated substrate supports having a protective coating thereon. The protective coating is formed from pure yttria or alloys predominantly of yttria. The protective coating is diffusion bonded to the heater plate of the substrate support. Two distinct silicon containing layers are formed between the heater plate and the protective coating as the result of the diffusion bonding.

First claim

The invention claimed is:

1. A substrate support, comprising:
a stem;
a heater plate coupled to the stem, wherein the heater plate encapsulates at least one embedded heater;
a bonding layer disposed on the heater plate, wherein the bonding layer comprises a first layer comprising silicon and aluminum and a second layer consisting of Y 2 Si 2 O 7 ; and
a third layer bonded to and in direct contact with the second layer, wherein the second layer is between the first layer and the third layer, and the third layer comprises yttria and is distinct from the second layer and the first layer.

2. The substrate support of claim 1 , wherein the heater plate comprises aluminum nitride.

3. The substrate support of claim 2 , wherein the first layer is Al 6 Si 2 O 13 .

4. The substrate support of claim 1 , wherein the third layer has a thickness of about 100 microns to about 2 mm.

5. The substrate support of claim 1 , wherein the third layer consists of Y 2 O 3 —ZrO 2 —Al 2 O 3 .

6. A substrate support, comprising:
a stem;
a heater plate coupled to the stem, wherein the heater plate comprises aluminum nitride and encapsulates at least one embedded heater;
a first layer disposed on the heater plate, wherein the first layer comprises silicon;
a second layer disposed on the first layer, wherein the second layer consists of Y 2 Si 2 O 7 and is distinct from the first layer; and
a third layer disposed on and in direct contact with the second layer, wherein the second layer is between the first layer and the third layer, and the third layer consists of Y 2 O 3 —ZrO 2 —Al 2 O 3 and is distinct from the first layer and the second layer.

7. The substrate support of claim 6 , wherein the first layer is Al 6 Si 2 O 13 .

8. The substrate support of claim 6 , wherein the third layer has a thickness of about 100 microns to about 2 mm.

9. A substrate support, comprising:
a stem;
a heater plate coupled to the stem, wherein the heater plate encapsulates at least one embedded heater;
a bonding layer disposed on the heater plate, wherein the bonding layer comprises a first layer consisting of Al 6 Si 2 O 13 and a second layer consisting of Y 2 Si 2 O 7 ; and
a third layer disposed on and in direct contact with the second layer, wherein the second layer is between the first layer and the third layer, and the third layer comprises yttria and is distinct from the first layer and the second layer.

10. The substrate support of claim 9 , wherein the heater plate comprises aluminum nitride.

11. The substrate support of claim 10 , wherein the third layer consists of Y 2 O 3 —ZrO 2 —Al 2 O 3 .

12. The substrate support of claim 11 , wherein the third layer has a thickness of about 100 microns to about 2 mm.

Assignees

• Applied Materials Inc

Inventors

• Duan Ren-Guan
• Rocha-Alvarez Juan Carlos
• Zhou Jianhua

Classifications

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/0432 Primary

  mainly by conduction · CPC title

• B32B2264/107

  Ceramic · CPC title

• H05B3/143 Primary

  applied to semiconductors, e.g. wafers heating (H05B3/0047 takes precedence) · CPC title

• B32B2037/246

  Vapour deposition · CPC title