Nanostructure and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9975291-B2
Application number	US-201314441866-A
Country	US
Kind code	B2
Filing date	Dec 19, 2013
Priority date	Dec 27, 2012
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A nanostructure that is visually recognized as being seamless by its more regularly and more uniformly formed fine concave-convex structure and that exhibits an excellent antireflection effect against light in a visible wavelength range is provided. Such a nanostructure is configured by a number of rows of tracks each including structures, formed by protrusions or depressions on a surface of a substrate, arranged at a predetermined fine pitch. In this nanostructure, a distance between centers of the structures adjacent to each other across a strip-shaped portion (seam) in which portions with no structures within the predetermined pitch are continuously formed in a track arrangement direction is adjusted so as to prevent visual recognition of the seam.

First claim

The invention claimed is:

1. A nanostructure master used for manufacturing a nanostructure, the nanostructure master including surface concavities and convexities and an area without concavities and convexities that forms a seam in the nanostructure, so as to form the nanostructure comprising a number of tracks, each including arrangement of structures formed by the surface concavities and convexities on a surface of a substrate with a predetermined pitch, wherein
every track includes a portion in which there are no additional structures continuously formed within the predetermined pitch so as to form the seam across a plurality of tracks, wherein the portion includes a distance between centers of the structures adjacent to each other across the seam,
the distance between the centers of the structures adjacent to each other across the seam or a length of the seam is determined so as to prevent visual recognition of the seam,
the distance between the centers of the structures adjacent to each other across the seam is set to be:
(i) 1 to 1.52 times the predetermined pitch, or
(ii) greater than 1.52 times the pitch when the length of the seam continuously formed across a plurality if tracks is set at 50 μm or less, and
the adjacent structures of different tracks are arranged in a staggered manner.

2. The nanostructure master according to claim 1 , wherein the nanostructure master is a roll master.

Assignees

• Dexerials Corp

Inventors

• Endoh Sohmei

Classifications

• B29C59/022 Primary

  characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor · CPC title

• B29K2833/04

  Polymers of esters · CPC title

• G03F7/70383

  Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams (maskless lithography using a programmable mask G03F7/70291) · CPC title

• B29C33/38

  characterised by the material or the manufacturing process (B29C33/44 takes precedence) · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title