Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

Patent metadata

Field	Value
Publication number	US-9974191-B2
Application number	US-201514805506-A
Country	US
Kind code	B2
Filing date	Jul 22, 2015
Priority date	Jan 24, 2013
Publication date	May 15, 2018
Grant date	May 15, 2018

Abstract

Manufacturing quality of a semiconductor device can be improved, and manufacturing throughput can be improved. A method of manufacturing a semiconductor device includes (a) placing a substrate on a substrate supporting unit installed in a processing chamber, the substrate having thereon a solder with an oxygen-containing film on a surface thereof, (b) reducing the oxygen-containing film by supplying a reducing gas into the processing chamber while maintaining a thermal conductivity of an inner atmosphere of the processing chamber at a first thermal conductivity, and (c) melting the solder by supplying a thermally conductive gas into the processing chamber while maintaining the thermal conductivity of the inner atmosphere of the processing chamber at a second thermal conductivity higher than the first thermal conductivity.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device comprising:
(a) placing a substrate on a substrate supporting unit installed in a processing chamber, the substrate having thereon a solder with an oxygen-containing film on a surface thereof;
(b) reducing the oxygen-containing film by supplying a reducing gas and an additive gas having a thermal conductivity different from that of the reducing gas into the processing chamber while maintaining a thermal conductivity of an inner atmosphere of the processing chamber at a first thermal conductivity; and
(c) melting the solder by supplying the reducing gas as a thermally conductive gas and the additive gas into the processing chamber while maintaining the thermal conductivity of the inner atmosphere of the processing chamber at a second thermal conductivity higher than the first thermal conductivity,
wherein a ratio of the reducing gas to the additive gas in (c) is greater than a ratio of the reducing gas to the additive gas in (b).

2. The method of claim 1 , wherein a flow rate of the thermally conductive gas is controlled in (c) so as to maintain a temperature of the substrate at a predetermined temperature.

3. The method of claim 1 , wherein a distance between a front end of a lifter pin of the substrate supporting unit and a top surface of the substrate supporting unit is adjusted to a first distance in (b), and the distance between the front end of the lifter pin and the top surface of the substrate supporting unit is adjusted to a second distance in (c).

4. The method of claim 3 , wherein a temperature of the substrate is maintained at 250° C. or lower in (c), and the second distance ranges from 0.5 mm to 5 mm in (c).

5. The method of claim 3 , wherein the first distance is longer than the second distance.

6. The method of claim 1 , wherein (b) comprises subjecting the substrate to plasma processing while maintaining the substrate at a temperature lower than a melting point of the solder, and (c) comprises processing the substrate at a temperature higher than the melting point of the solder and lower than a temperature at which the substrate is damaged.

7. The method of claim 1 , wherein the substrate supporting unit comprises a lifter pin and a heater, and each of (b) and (c) is performed with the substrate heated by the heater maintained at a predetermined temperature and placed on a front end of the lifter pin.

8. The method of claim 7 , wherein the substrate is heated by thermal conduction of a gas near the heater and the substrate in (b) and (c).

9. The method of claim 1 , wherein an inner pressure of the processing chamber when performing (c) is higher than that of the processing chamber when performing (b).

10. A non-transitory computer-readable recording medium storing a program for causing a computer to perform:
(a) placing a substrate on a substrate supporting unit installed in a processing chamber, the substrate having thereon a solder with an oxygen-containing film on a surface thereof;
(b) reducing the oxygen-containing film by supplying a reducing gas and an additive gas having a thermal conductivity different from that of the reducing gas into the processing chamber while maintaining a thermal conductivity of an inner atmosphere of the processing chamber at a first thermal conductivity; and
(c) melting the solder by supplying the reducing gas as a thermally conductive gas and the additive gas into the processing chamber while maintaining the thermal conductivity of the inner atmosphere of the processing chamber at a second thermal conductivity higher than the first thermal conductivity,
wherein a ratio of the reducing gas to the additive gas in (c) is greater than a ratio of the reducing gas to the additive gas in (b).

11. The non-transitory computer-readable recording medium of claim 10 , wherein (b) comprises subjecting the substrate to plasma processing while maintaining the substrate at a temperature lower than a melting point of the solder, and (c) comprises processing the substrate at a temperature higher than the melting point of the solder and lower than a temperature at which the substrate is damaged.

Assignees

• Hitachi Int Electric Inc

Inventors

• Tsubota Yasutoshi

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W72/011

  Apparatus therefor · CPC title