Optical module, optical module mounting method, optical module-mounted circuit substrate, optical module evaluation kit system, circuit substrate, and communication system
US-2017192177-A1 · Jul 6, 2017 · US
US9972960B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9972960-B1 |
| Application number | US-201615381521-A |
| Country | US |
| Kind code | B1 |
| Filing date | Dec 16, 2016 |
| Priority date | Dec 16, 2016 |
| Publication date | May 15, 2018 |
| Grant date | May 15, 2018 |
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An active optical planar waveguide apparatus includes a planar core layer comprising an active laser ion; one or more cladding layers in optical contact with at least one surface of the planar core layer; a metallic binder layer chemically bonded to an outermost cladding layer of the one or more cladding layers; a metallic adhesion layers disposed on the metallic binder layer; a heatsink for dissipating heat from the planar waveguide; and a metallic thermal interface material (TIM) layer providing a metallurgical bond between the metallic adhesion layer and the heatsink.
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What is claimed is: 1. An active optical planar waveguide apparatus, comprising: a planar core layer comprising an active laser ion, the planar core layer guiding light in only one dimension; one or more cladding layers in optical contact with at least one surface of the planar core layer; a metallization layer comprising one or more metallic layers chemically bonded to an outermost cladding layer of the one or more cladding layers; a heatsink for dissipating heat from the planar waveguide; and a metallic thermal interface material (TIM) layer providing a metallurgical bond between the metallization layer and the heatsink, the TIM having a thickness of about 10 to about 200 micrometers. 2. The active optical planar waveguide apparatus of claim 1 , wherein the metallization layer comprises two layers, a metallic binder layer and a metallic adhesion layer, and the metallic TIM is arranged between the metallic adhesion layer and the heatsink. 3. The active optical planar waveguide apparatus of claim 2 , wherein the metallic binder layer has a thickness equal to or less than 1/10 wave at a laser wavelength. 4. The active optical planar waveguide apparatus of claim 2 , wherein the metallic binder layer is chromium, titanium, tungsten, nickel, or any combination thereof. 5. The active optical planar waveguide apparatus of claim 2 , wherein the metallic adhesion layer is silver, copper, gold, nickel, or any combination thereof. 6. The active optical planar waveguide apparatus of claim 2 , wherein a reflectivity at the one or more cladding layers to metallic binder layer interface is less than 50% from 0 to 30 degrees angles of incidence. 7. The active optical planar waveguide apparatus of claim 1 , wherein a reflectivity at the one or more cladding layers to metallic binder layer interface is less than 20% from 0 to 45 degrees angles of incidence. 8. The active optical planar waveguide apparatus of claim 2 , further comprising one or more additional metallic or dielectric layers disposed between the metallic binder layer and the metallic adhesion layer. 9. The active optical planar waveguide apparatus of claim 8 , wherein the one or more additional dielectric layers is germanium, silicon, SiO 2 , HfO 2 , Nb 2 O 5 , Ta 2 O 5 , or any combination thereof. 10. The active optical planar waveguide apparatus of claim 1 , wherein the metallic TIM is silver, gold, indium, copper, or a metal solder, and the TIM has a thickness in a range from about 10 to about 200 microns. 11. The active optical planar waveguide apparatus of claim 1 , wherein the heatsink has a coefficient of thermal expansion (CTE) matched to the planar core layer to within 2 parts per million/degrees Celsius (ppm/° C.). 12. A method of making an active planar waveguide apparatus, the method comprising: depositing a metallic binder layer on a surface of an optically flat surface of a planar waveguide, the planar waveguide guiding light in only one dimension; depositing a metallic adhesion layer on the metallic binder layer; and bonding by a metallurgical process a heatsink to the waveguide using a metallic thermal interface material (TIM) between the metallic adhesion layer and the heatsink, the metallic TIM having a thickness of about 10 to about 200 micrometers. 13. The method of claim 12 , wherein the metallic TIM is silver, copper, indium, or a combination thereof. 14. The method of claim 12 , wherein the metallic TIM comprises a sintered metal. 15. The method of claim 12 , wherein the sintered metal is formed from nanoparticles. 16. The method of claim 15 , wherein an intermediate layer of metal or dielectric material is deposited between the metallic binder layer and the metallic adhesion layer. 17. A passive optical planar waveguide apparatus, comprising: one or more optically transparent planar waveguide substrates in optical contact with one another, the one or more optically transparent planar waveguide substrates guiding light in only one dimension; a metallic binder layer chemically bonded to an outermost optical layer of the one or more optically transparent substrates; one or more metallic adhesion layers disposed on the metallic binder layer; and a metallic thermal interface material (TIM) layer forming a metallurgical bond to the metallic adhesion layer, the metallic TIM having a thickness of about 10 to about 200 micrometers. 18. The passive optical planar waveguide apparatus of claim 17 , further comprising an additional metal layer disposed between the metallic binder layer and the one or more metallic adhesion layers. 19. The passive optical planar waveguide apparatus of claim 17 , further comprising an additional dielectric layer disposed between the metallic binder layer and the one or more metallic adhesion layers. 20. The passive optical planar waveguide apparatus of claim 19 , wherein the additional dielectric layer is germanium, silicon, SiO 2 , HfO 2 , Nb 2 O 5 , Ta 2 O 5 , or any combination thereof. 21. The passive optical planar waveguide apparatus of claim 17 , wherein the metallic binder layer is chromium, titanium, tungsten, nickel, or any combination thereof. 22. The passive optical planar waveguide apparatus of claim 17 , wherein the one or more metallic adhesion layers is silver, copper, gold, nickel, or any combination thereof. 23. The passive optical planar waveguide apparatus of claim 17 , wherein the metallic TIM is silver, gold, indium, copper, or a metal solder, and the TIM has a thickness in a range from about 10 to about 200 microns. 24. The passive optical planar waveguide apparatus of claim 17 , wherein a reflectivity at the one or more optically transparent substrates to metallic binder layer interface is less than 50% from 0 to 30 degrees angles of incidence.
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