Piezoelectric transducer, ultrasonic probe, and piezoelectric transducer manufacturing method

Patent metadata

Field	Value
Publication number	US-9972766-B2
Application number	US-201514840115-A
Country	US
Kind code	B2
Filing date	Aug 31, 2015
Priority date	Mar 25, 2013
Publication date	May 15, 2018
Grant date	May 15, 2018

Abstract

According to embodiment, a piezoelectric transducer includes a polarized single crystal piezoelectric body comprising a lead complex perovskite compound containing niobium oxide and at least one of magnesium oxide and indium oxide and including a first plane whose crystal orientation is [100] and a second plane which faces the first plane and whose crystal orientation is [100], and first electrode provided on the first plane side of the body and a second electrode provided on the second plane side of the body. A ratio of a second FWHM of diffracted X-rays at the Miller index (400) of the body to a first FWHM of diffracted X-rays at the miller index (400) of the body which is unpolarized or has undergone depolarization processing is not less than 0.22 and not more than 0.4.

First claim

The invention claimed is:

1. A piezoelectric transducer comprising:
a polarized single crystal piezoelectric body comprising a lead complex perovskite compound containing niobium oxide and at least one of magnesium oxide and indium oxide and including a first plane whose crystal orientation is [100] and a second plane which faces the first plane and whose crystal orientation is [100]; and
a first electrode provided on the first plane side of the single crystal piezoelectric body and a second electrode provided on the second plane side of the single crystal piezoelectric body,
wherein a ratio of a second FWHM of diffracted X-rays at the Miller index (400) of the single crystal piezoelectric body to a first FWHM of diffracted X-rays at the miller index (400) of the single crystal piezoelectric body which is unpolarized or has undergone depolarization processing is not less than 0.22 and not more than 0.4.

2. The piezoelectric transducer according to claim 1 , wherein a ratio of a second diffraction angle at which diffracted X-rays at the Miller index (400) of the single crystal piezoelectric body reaches a peak to a first diffraction angle at which diffracted X-rays at the miller index (400) of the single crystal piezoelectric body which is unpolarized or has undergone depolarization processing reaches a peak is not less than 1.0005 and not more than 1.005.

3. The piezoelectric transducer according to claim 1 , wherein the lead complex perovskite compound contains x mol % (wherein x is a positive value) of lead titanate and (1−x) mol % of lead magnesium niobate, x=not less than 26 and not more than 33, and a phase transition temperature of a crystal structure of the lead complex perovskite compound is not less than 80° C. and not more than 150° C.

4. The piezoelectric transducer according to claim 1 , wherein the lead complex perovskite compound contains z mol % (wherein z is a positive value) of lead indium niobate, y mol % (wherein y is a positive value) of lead magnesium niobate, and x mol % of lead titanate, x=not less than 26 and not more than 33, y=not less than 24 and not more than 59, z=not less than 15 and not more than 50, and x+y+z=100.

5. The piezoelectric transducer according to claim 2 , wherein an FWHM of an X-ray intensity distribution corresponding to the second diffraction angle is not less than 0.1° and not more than 0.2°.

6. A ultrasonic probe comprising:
a polarized single crystal piezoelectric body comprising a lead complex perovskite compound containing niobium oxide and at least one of magnesium oxide and indium oxide and including a first plane whose crystal orientation is [100] and a second plane which faces the first plane and whose crystal orientation is [100];
a first electrode provided on the first plane side of the single crystal piezoelectric body and a second electrode provided on the second plane side of the single crystal piezoelectric body;
an acoustic matching layer provided on a front surface of the first electrode; and
a backing member provided on a rear surface of the second electrode,
wherein a ratio of a second FWHM of diffracted X-rays at the Miller index (400) of the single crystal piezoelectric body to a first FWHM of diffracted X-rays at the miller index (400) of the single crystal piezoelectric body which is unpolarized or has undergone depolarization processing is not less than 0.22 and not more than 0.4.

7. A piezoelectric transducer manufacturing method comprising:
preparing a piezoelectric single crystal comprising a lead complex perovskite compound containing niobium oxide and at least one of magnesium oxide and indium oxide;
preparing a single crystal wafer including a first plane whose crystal orientation is [100] and a second plane which faces the first plane and whose crystal orientation is [100] by cutting the piezoelectric single crystal along a plane whose crystal orientation of the piezoelectric single crystal is [100];
providing a first electrode and a second electrode on the first plane side and the second plane side, respectively; and
applying an AC electric field between the first electrode and the second electrode.

8. The piezoelectric transducer manufacturing method according to claim 7 , wherein as the AC electric field, a peak-to-peak electric field of not less than 0.5 kV/mm and not more than 3.6 kV/mm and an AC electric field having a predetermined frequency are applied a predetermined number of times.

9. The piezoelectric transducer manufacturing method according to claim 7 , wherein a DC electric field in a range of not less than 0.25 kV/mm and not more than 2.5 kV/mm is applied between a first electrode and a second electrode over not less than 1 sec and not more than 30 min before and after application of the AC electric field.

10. The piezoelectric transducer manufacturing method according to claim 8 , wherein the predetermined frequency is not less than 0.1 Hz and not more than 1 kHz,
the predetermined number of times is not less than 2 and not more than 1,000, and
the peak-to-peak electric field is higher than the DC electric field.

11. The piezoelectric transducer manufacturing method according to claim 9 , wherein the peak-to-peak electric field is not less than 0.8 kV/mm and not more than 2.0 kV/mm, and
the DC electric field is not less than 0.5 kV/mm and not more than 1.2 kV/mm.

12. The piezoelectric transducer manufacturing method according to claim 8 , wherein application of the AC electric field is executed at a temperature lower than a phase transition temperature of the lead complex perovskite compound.

Assignees

• Toshiba Medical Sys Corp

Inventors

• Yamashita Yohachi
• Yamamoto Noriko
• Hosono Yasuharu
• Itsumi Kazuhiro

Classifications

• H01L41/41

  Electricity · mapped topic

• H01L41/338

  Electricity · mapped topic

• A61B8/4444

  related to the probe · CPC title

• Y10T29/43

  Electric condenser making · CPC title

• H01L41/1875

  Electricity · mapped topic