Photovoltaic devices including nitrogen-containing metal contact
US-2015380601-A1 · Dec 31, 2015 · US
Light detection device
US9972739B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9972739-B2 |
| Application number | US-201514825581-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 13, 2015 |
| Priority date | Dec 28, 2012 |
| Publication date | May 15, 2018 |
| Grant date | May 15, 2018 |
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Abstract
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A method of forming a light detection device includes forming a non-porous layer on a substrate, forming a light absorption layer on the non-porous layer, the light absorption layer including pores formed in a surface thereof, forming a Schottky layer on the surface of the light absorption layer and in the pores thereof, and forming a first electrode layer on the Schottky layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a light detection device, the method comprising: forming a non-porous layer on a substrate; forming a light absorption layer of the light detection device on the non-porous layer, the light absorption layer being configured to absorb light and comprising pores formed in a surface of the light absorption layer; forming a Schottky layer on the surface of the light absorption layer and in the pores of the light absorption layer; and forming a first electrode layer on the Schottky layer. 2. The method of claim 1 , wherein the non-porous layer comprises ZnO, Zn x Cd 1-x O (0<x<1), or Zn y Mg 1-y O (0<y<1), and wherein the light absorption layer comprises ZnO, Zn x Cd 1-x O (0<x<1), or Zn y Mg 1-y O (0<y<1). 3. The method of claim 2 , wherein the non-porous layer and the light absorption layer are formed using Metal-Organic Chemical Vapor Deposition (MOCVD), and wherein the non-porous layer and the light absorption layer are formed at a temperature in a range from 600° C. to 800° C., and a pressure is in a range of 100 Torr to 300 Torr. 4. The method of claim 3 , wherein each pore is formed to have a diameter of greater than 0 μm to 3 μm and a depth of 0.1 μm to 10 μm. 5. The method of claim 4 , wherein O 2 and Zn source gasses are used to form the light absorption layer, and the ratio of O 2 /Zn is in a range of 1,000 to 5,000. 6. The method of claim 5 , wherein the non-porous layer is first formed to a thickness in a range of greater than 0 μm to 5 μm, and wherein the light absorption layer is formed after forming the non-porous layer.
Assignees
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Classifications
Electricity · mapped topic
PV systems with concentrators · CPC title
Electricity · mapped topic
Electricity · mapped topic
- H01L31/1828Primary
Electricity · mapped topic
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- What does patent US9972739B2 cover?
- A method of forming a light detection device includes forming a non-porous layer on a substrate, forming a light absorption layer on the non-porous layer, the light absorption layer including pores formed in a surface thereof, forming a Schottky layer on the surface of the light absorption layer and in the pores thereof, and forming a first electrode layer on the Schottky layer.
- Who is the assignee on this patent?
- Seoul Viosys Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L31/1828. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 15 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).