Holding device, method of determining attraction abnormality in holding device, lithography apparatus, and method of manufacturing article
US-2024393682-A1 · Nov 28, 2024 · US
US9971239B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9971239-B2 |
| Application number | US-201615299565-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 21, 2016 |
| Priority date | Oct 22, 2015 |
| Publication date | May 15, 2018 |
| Grant date | May 15, 2018 |
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Provided here are hard transparent polymer pen arrays, methods of printing indicia using the same, and methods of preparing the same.
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What is claimed is: 1. A tip array comprising a plurality of tips fixed to a common substrate layer and a rigid support, the tips and common substrate layer formed from an elastomeric polymer, the elastomeric polymer of the tips having a compression modulus of about 10 MPa to about 300 MPa, each tip having a radius of curvature of less than about 1 μm, and each tip coated with silica having a thickness of 125 nm to 200 nm. 2. The tip array of claim 1 , wherein the elastomeric polymer comprises polydimethylsiloxane (PDMS). 3. The tip array of claim 2 , wherein the PDMS comprises a trimethylsiloxy terminated vinylmethylsiloxane-dimethysiloxane copolymer, a methylhydrosiloxane-dimethylsiloxane copolymer, or a mixture thereof. 4. The tip array of claim 1 , wherein each tip has a radius of curvature of less than about 0.5 μm. 5. The tip array of claim 4 , wherein each tip has a radius of curvature of less than 100 nm. 6. The tip array of claim 1 , wherein the thickness of the common substrate layer is 50 μm to 100 μm. 7. The tip array of claim 1 , wherein the tip array, common substrate layer, and rigid support are at least translucent. 8. The tip array of claim 1 , wherein the common substrate layer and tips have a combined thickness of less than 200 μm. 9. The tip array of claim 1 , wherein the silica coating has a thickness of about 150 nm to about 175 nm. 10. The tip array of claim 1 , wherein the elastomeric polymer comprises a methylchlorosilane, an ethylchlorosilane, a phenylchlorosilane, polydimethylsiloxane, polyethylene, polystyrene, polybutadiene, polyurethane, polyisoprene, polyacrylic rubber, fluorosilicone rubber, fluoroelastomer, or a combination thereof. 11. The tip array of claim 1 , having greater than 1 million tips. 12. The tip array of claim 1 , wherein the silica coating has a thickness of about 150 nm to about 175 nm and the common substrate layer and tips have a combined thickness of less than 200 μm. 13. The tip array of claim 1 , wherein the rigid support comprises glass. 14. A method for sub-micron scale printing of indicia on a substrate surface, comprising: coating the tip array of claim 1 with a patterning composition; contacting the substrate surface for a first contacting period of time and at a first contacting pressure with all or substantially all of the coated tips of the array to deposit the patterning composition onto the substrate surface and form substantially uniform indicia with all or substantially all of said coated tips, the indicia having a dot size (or line width) of less than 1 μm. 15. The method of claim 14 , further comprising tilting the tip array relative to the substrate surface such that the size of the resulting indicia varies across the substrate surface. 16. The method of claim 14 , wherein the indicia have a feature pitch of 190 nm to 500 nm. 17. The method of claim 14 , wherein the patterning composition comprises a polymer and the indicia comprise the polymer. 18. The method of claim 14 , wherein the indicia size is independent of the contact force. 19. A method of making the tip array of claim 1 , comprising: coating the tips of an elastomeric polymeric tip array with silica by plasma-enhanced chemical vapor deposition (PECVD) to form a silica coat on the tips having a thick ness of 125 nm to 200 nm. 20. The method of claim 15 , wherein the PECVD is performed at a temperature of 200° C. and a pressure of 900 mTorr.
Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title
Silicon dioxide · CPC title
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