Systems and methods for limiting void formation in ceramic matrix composite components
US-2025326698-A1 · Oct 23, 2025 · US
US9969655B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9969655-B2 |
| Application number | US-201514878000-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 8, 2015 |
| Priority date | Oct 8, 2015 |
| Publication date | May 15, 2018 |
| Grant date | May 15, 2018 |
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The disclosure provides for an article including a substrate, an environmental barrier coating (EBC), a bondcoat and a boron source. The substrate may include a silicon-including ceramic material. The EBC may be disposed over the substrate, and the bondcoat may disposed between the substrate and the EBC. The bondcoat may include silicon. The boron source may be disposed within the article to provide an effective amount of boron to form an oxide including silicon and at least 0.1 weight percent boron during exposure of the bondcoat to an oxidizing environment at a temperature greater than 900 degrees Celsius. The oxide may be a borosilicate glass that is substantially devitrification resistant to prevent spallation of the EBC and thereby enhance the temperature capability of the article.
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The invention claimed is: 1. An article comprising: a substrate comprising a silicon-including material; an environmental barrier coating (EBC) disposed over the substrate; a bondcoat disposed between the substrate and the EBC, the bondcoat comprising elemental silicon, silicon carbide, silicon nitride, a metal silicide, a silicon alloy, or mixtures thereof or the bondcoat comprising oxide phases of silicon including silica, rare earth silicates, rare earth aluminosilicates, and/or alkaline earth aluminosilicates; and a boron selected from the group consisting of elemental boron in solid silicon solution, boron nitride, boron carbide boron oxide, a metal boride, and combinations thereof source disposed to provide an effective amount of boron to form an oxide comprising silicon and at least 0.1 weight percent boron during exposure of the bondcoat to an oxidizing environment at a temperature greater than 900 degrees Celsius, wherein the substrate, the EBC, or both of these, include the boron source. 2. The article of claim 1 , wherein the boron source includes elemental boron in silicon solid solution. 3. The article of claim 1 , wherein the EBC includes a porous layer proximate the bondcoat. 4. The article of claim 1 , wherein the EBC includes a hermetic layer. 5. The article of claim 4 , wherein the EBC includes the boron source. 6. The article of claim 1 , wherein at least a portion of the boron source is interposed between at least a portion of the bondcoat and at least a portion of the EBC. 7. The article of claim 6 , wherein at least one other portion of the boron source is disposed within the substrate, the EBC, the bondcoat, or combinations including any of the foregoing. 8. The article of claim 1 , further comprising a layer of oxide disposed between the EBC and the bondcoat, wherein the layer of oxide comprises silicon and at least about 0.1 weight percent boron. 9. The article of claim 1 , wherein the silicon-including material of the substrate is a ceramic matrix composite (CMC). 10. The article of claim 1 , wherein the oxide comprises at least about 0.5 wt % boron. 11. The article of claim 1 , wherein the oxide comprises no more than about 10 wt % boron. 12. The article of claim 1 , wherein the oxide is substantially amorphous and substantially devitrification resistant. 13. The article of claim 1 , wherein the oxide is disposed between the bondcoat and the EBC. 14. The article of claim 1 , wherein the bondcoat also includes the boron source. 15. An article comprising: a substrate comprising a silicon-including material; an environmental barrier coating (EBC) disposed over the substrate; a bondcoat disposed between the substrate and the EBC, the bondcoat comprising elemental silicon, silicon carbide, silicon nitride, a metal silicide, a silicon alloy, or mixtures thereof or the bondcoat comprising oxide phases of silicon including silica, rare earth silicates, rare earth aluminosilicates, and/or alkaline earth aluminosilicates; an oxide adjacent the bondcoat comprising silicon and at least 0.1% boron; and a boron selected from the group consisting of elemental boron in solid silicon solution, boron nitride, boron carbide boron oxide, a metal boride, and combinations thereof source disposed to provide boron to the oxide during exposure of the bondcoat to an oxidizing environment at a temperature greater than 900 degrees Celsius, wherein the substrate, the EBC, or both of these, include the boron source. 16. The article of claim 15 , wherein the oxide comprises at least 0.5 weight percent boron. 17. The article of claim 15 , wherein the oxide is substantially amorphous and devitrification resistant. 18. The article of claim 15 , wherein the bondcoat also includes the boron source. 19. An article comprising: a substrate comprising a silicon-including material; an environmental barrier coating (EBC) disposed over the substrate; a bondcoat disposed between the substrate and the EBC, the bondcoat comprising elemental silicon; and a boron selected from the group consisting of elemental boron in solid silicon solution, boron nitride, boron carbide boron oxide, a metal boride, and combinations thereof source disposed to provide an effective amount of boron to form an oxide comprising silicon and at least 0.1 weight percent boron during exposure of the bondcoat to an oxidizing environment at a temperature greater than 900 degrees Celsius, wherein the substrate, the EBC, or both of these, include the boron source. 20. The article of claim 19 , wherein the boron source includes elemental boron in silicon solid solution. 21. The article of claim 19 , wherein the EBC includes a porous layer proximate the bondcoat. 22. The article of claim 19 , wherein the EBC includes a hermetic layer. 23. The article of claim 22 , wherein the EBC includes the boron source. 24. The article of claim 19 , wherein at least a portion of the boron source is interposed between at least a portion of the bondcoat and at least a portion of the EBC. 25. The article of claim 24 , wherein at least one other portion of the boron source is disposed within the substrate, the EBC, the bondcoat, or combinations including any of the foregoing. 26. The article of claim 19 , wherein the silicon-including material of the substrate is a ceramic matrix composite (CMC). 27. The article of claim 19 , wherein the oxide comprises at least about 0.5 wt % boron. 28. The article of claim 19 , wherein the oxide comprises no more than about 10 wt % boron. 29. The article of claim 19 , wherein the oxide is substantially amorphous and substantially devitrification resistant. 30. The article of claim 19 , wherein the oxide is disposed between the bondcoat and the EBC. 31. The article of claim 19 , wherein the bondcoat also includes the boron source.
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