Charge-coupled device, manufacturing method thereof, and solid-state imaging element

Patent metadata

Field	Value
Publication number	US-9967503-B2
Application number	US-201415033408-A
Country	US
Kind code	B2
Filing date	Oct 31, 2014
Priority date	Nov 5, 2013
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

Each pixel region PX includes a photoelectric conversion region S 1 , a resistive gate electrode R, a first transfer electrode T 1 , a second transfer electrode T 2 , a barrier region B positioned directly beneath the first transfer electrode T 1 in a semiconductor substrate 10 , and a charge accumulation region S 2 positioned directly beneath the second transfer electrode T 2 in the semiconductor substrate 10 . An impurity concentration of the barrier region B is lower than an impurity concentration of the charge accumulation region S 2 , and the first transfer electrode T 1 and the second transfer electrode T 2 are electrically connected to each other.

First claim

The invention claimed is:

1. A charge-coupled device comprising:
a semiconductor substrate including a plurality of pixel regions aligned in one direction; and
an insulation film provided on the semiconductor substrate,
wherein each pixel region includes
a photoelectric conversion region which performs photoelectric conversion on an incident energy beam,
a resistive gate electrode provided on the insulation film on the photoelectric conversion region, wherein a predetermined fixed voltage is applied between the ends of the resistive gate electrode;
a first transfer electrode provided on the insulation film,
a second transfer electrode provided on the insulation film and disposed between the first transfer electrode and a pixel region adjacent to the pixel region,
a barrier region positioned directly beneath the first transfer electrode in the semiconductor substrate, and
a charge accumulation region positioned directly beneath the second transfer electrode in the semiconductor substrate, an impurity concentration of the barrier region is lower than an impurity concentration of the charge accumulation region, and the first transfer electrode and the second transfer electrode are electrically connected to each other,
wherein a potential barrier region having a lower impurity concentration than the photoelectric conversion region is formed between the charge accumulation region in a pixel region and the photoelectric conversion region in a pixel region adjacent to a rear stage of the pixel region.

2. The charge-coupled device according to claim 1 ,
wherein the first transfer electrode and the second transfer electrode are configured from one common electrode.

3. A solid-state imaging element comprising:
the charge-coupled device according to claim 1 ;
a drive circuit for driving the charge-coupled device; and
a controller for controlling the drive circuit,
wherein the controller controls the drive circuit so that potentials of the first and the second transfer electrodes vertically vibrate at the same time.

4. A method of manufacturing the charge-coupled device according to claim 2 ,
wherein the barrier region is formed by adding impurities which form the photoelectric conversion region to a surface of the semiconductor substrate, and performing a carrier compensation by partially adding impurities of a conductivity type opposite to the semiconductor region which is formed by the addition.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Takagi Shin-Ichiro
• Yoneta Yasuhito
• Suzuki Hisanori
• Muramatsu Masaharu

Classifications

• H04N23/54 Primary

  Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils · CPC title

• H01L27/14825

  Electricity · mapped topic

• H01L27/14685

  Electricity · mapped topic

• H01L27/14837

  Electricity · mapped topic

• H04N5/2253

  Electricity · mapped topic