III-V lasers with integrated silicon photonic circuits

Patent metadata

Field	Value
Publication number	US-9966735-B2
Application number	US-201615188419-A
Country	US
Kind code	B2
Filing date	Jun 21, 2016
Priority date	Jul 24, 2013
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

First claim

What is claimed is:

1. A laser, comprising:
a three-layer semiconductor stack formed from III-V semiconductors on a substrate, wherein a middle layer has a lower bandgap than a top layer and a bottom layer;
a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack, the mirror region including a plurality of regularly spaced trenches in a layer of first non-conductive material, the trenches including a second non-conductive material; and
a waveguide region monolithically formed at a second end of the stack and including a layer of a non-conductive waveguide material, configured to transmit emitted light.

2. The laser of claim 1 , wherein the stack has a height-to-width aspect ratio greater than 1.

3. The laser of claim 1 , wherein the plurality of regularly spaced trenches and the first non-conductive material therebetween in the mirror region comprises alternating regions of the first and second non-conductive material, which have different indices of refraction.

4. The laser of claim 3 , wherein the alternating regions have a separation based on a wavelength of the emitted light.

5. The laser of claim 1 , further comprising front and back contacts that contact the top and bottom of the stack, respectively, the back contact including conductive material deposited in an etched region of a back contact region filled with a third non-conductive material, the conductive material extending through the third non-conductive material to a conductive layer of the substrate connecting the back contact to the bottom of the stack.

6. The laser of claim 5 , wherein the third non-conductive material is the non-conductive waveguide material.

7. The laser of claim 1 , wherein the mirror and waveguide regions are monolithically grown on an insulator layer of the substrate.

8. The laser of claim 1 , further comprising a plurality of said three-layer semiconductor stack arranged in parallel on the substrate.

9. The laser of claim 1 , wherein the waveguide region comprises:
a surface perpendicular to the stack; and
an extension from said surface that connects with the stack.

10. A laser, comprising:
a plurality of three-layer semiconductor stacks formed from III-V semiconductors on a substrate, wherein a middle layer has a lower bandgap than a top layer and a bottom layer, and wherein the stack has a height-to-width aspect ratio greater than 1 to trap lattice mismatch defects;
a mirror region monolithically formed at a first end of the stacks, configured to reflect emitted light in the direction of the stacks, said mirror region comprising a plurality of regularly spaced trenches in a layer of first non-conductive material, the trenches including a second non-conductive material, thereby forming alternating regions of the first and second non-conductive materials, the first and second non-conductive materials having different indices of refraction;
a waveguide region monolithically formed from a non-conductive waveguide material at a second end of the stacks, configured to transmit emitted light;
a front contact that provides a shared electrical connection to the top layer of the stacks; and
a back contact comprising a conductive layer in the substrate that provides a shared electrical connection to the bottom layer of the stacks.

11. The laser of claim 10 , further comprising a back contact region including a non-conductive material, and an etched region extending from a top surface of the laser through the non-conductive material of the back contact region to the conductive layer of the substrate, and the back contact further comprises conductive material deposited in the etched region of the back contact region.

12. The laser of claim 11 , wherein the back contact region non-conductive material is the non-conductive waveguide material.

13. The laser of claim 10 , wherein the first non-conductive material is the non-conductive waveguide material.

14. The laser of claim 13 , wherein the mirror region and the waveguide region occupy respective etched regions of at least one layer of the substrate, the etched regions subsequently being filled with the non-conductive waveguide material.

15. A laser, comprising:
a three-layer semiconductor stack formed from III-V semiconductors on a conductive layer of a substrate and in a stack region of an insulator layer of the substrate from which material of the insulator layer has been removed, wherein a middle layer has a lower bandgap than a top layer and a bottom layer;
a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack, the mirror region occupying a volume in the insulator layer from which the insulator material has been removed and in which a first non-conductive material has been placed, the mirror region further including a plurality of regularly spaced trenches in the first non-conductive material, the trenches including a second non-conductive material; and
a waveguide region monolithically formed at a second end of the stack and occupying a volume in the insulator layer from which the insulator material has been removed and in which a non-conductive waveguide material has been placed, configured to transmit emitted light.

16. The laser of claim 15 , wherein plurality of regularly spaced trenches and the first non-conductive material therebetween in the mirror region comprises alternating regions of the first and second non-conductive material, which have different indices of refraction.

17. The laser of claim 16 , wherein the alternating regions have a separation based on a wavelength of the emitted light.

18. The laser of claim 15 , further comprising front and back contacts that contact the top and bottom of the stack, respectively, the back contact including conductive material deposited in an etched region of a back contact region filled with a third non-conductive material, the conductive material extending through the third non-conductive material to a conductive layer of the substrate connecting the back contact to the bottom of the stack.

19. The laser of claim 18 , wherein the third non-conductive material is the non-conductive waveguide material.

20. The laser of claim 15 , further comprising a plurality of the three-layer semiconductor stack formed in parallel in the insulator layer of the substrate, the bottoms thereof being electrically connected by the conductive layer of the substrate.

Assignees

• Globalfoundries Inc

Inventors

• Cheng Cheng-Wei
• Libsch Frank R
• Ning Tak H
• Rana Uzma
• Shiu Kuen-Ting

Classifications

• H01S5/2018

  Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers · CPC title

• H01S5/1057

  varying composition along the optical axis · CPC title

• H01S5/026

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title

• H01S5/3013

  AIIIBV compounds · CPC title

• H01S5/125

  Distributed Bragg reflector [DBR] lasers · CPC title