Optical film with quantum dots embedded in nano patterns, a preparation method thereof and solar cell comprising the same

Patent metadata

Field	Value
Publication number	US-9966488-B2
Application number	US-201615015595-A
Country	US
Kind code	B2
Filing date	Feb 4, 2016
Priority date	Nov 9, 2015
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

By virtue of a structure in which patterns have protuberances with a cone-shaped structure and quantum dots are embedded in the protuberances, an optical film prevents the reflection of light, and converts light in the near ultraviolet wavelength region to a range of wavelengths a solar cell can absorb the light, thereby significantly improving the efficiency of a device.

First claim

What is claimed is:

1. An optical film comprising:
an adhesive member; and
a pattern layer having a plurality of protuberance structures, provided on an upper surface of the adhesive member,
a plurality of quantum dots is embedded in the plurality of protuberances,
wherein the adhesive member has a thickness of 50 to 1000 μm, and the pattern layer had a thickness of 0.1 to 10 μm.

2. The optical film according to claim 1 , wherein the adhesive member is a polymer having Young's modulus of 1 to 5 MPa, and the pattern layer is a polymer having Young's modulus of 6 to 10 MPa.

3. The optical film according to claim 1 , wherein the adhesive member is s-polydimethylsiloxane, and the pattern layer is h-polydimethylsiloxane.

4. The optical film according to claim 1 , wherein the protuberance structures are a cone-shaped structure.

5. The optical film according to claim 1 , wherein the protuberance structures have an aspect ratio of height (b) to lower width (a) between 1 and 5.

6. The optical film according to claim 1 , wherein a distance between topmost ends of the protuberances formed on the pattern layer is between 350 and 530 nm.

7. The optical film according to claim 1 , wherein the quantum dots are at least one selected from the group consisting of CdS, CdSe, CdSe/ZnS, PbS, CdTe, ZnS, ZnSe, ZnTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InP, InAs, InSb and SiC.

8. The optical film according to claim 1 , wherein a mean core diameter of the quantum dots is between 1.0 and 2.5 nm.

9. The optical film according to claim 1 , wherein the content of the quantum dots embedded in the optical film is between 0.1 and 2 wt % by weight of the pattern layer.

10. The optical film according to claim 1 , wherein the optical film emits light with a fluorescence intensity of 10000 to 50000 a.u in a blue wavelength range of 400 to 480 nm under ultraviolet conditions.

Assignees

• Korea Inst Sci & Tech
• Korea Institute Of Scicence And Tech

Inventors

• Ko Hyungduk
• Han Il Ki
• Kim Yong Hyeon
• Park Minsik

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/055 Primary

  Electricity · mapped topic

• H01L31/0547

  Electricity · mapped topic

• H10F77/488

  Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection · CPC title

• H10F77/315

  the coatings being antireflective or having enhancing optical properties · CPC title