Solar cell apparatus and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9966486-B2
Application number	US-201214123462-A
Country	US
Kind code	B2
Filing date	May 30, 2012
Priority date	May 30, 2011
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

Disclosed are a solar cell apparatus and a method of fabricating the same. The solar cell apparatus includes a substrate, a first electrode layer on the substrate, a plurality of light absorbing columns on the first electrode layer, and a second electrode layer on the light absorbing columns.

First claim

The invention claimed is:

1. A solar cell apparatus comprising:
a substrate;
a first electrode layer on the substrate;
a plurality of molybdenum (Mo) layers on the first electrode layer;
a plurality of light absorbing columns on the Mo layers, respectively;
a plurality of buffer layers on the light absorbing columns, respectively;
a plurality of high resistance buffer layers on the buffer layers, respectively;
a second electrode layer on the light absorbing columns, the buffer layers, and the high resistance buffer layers; and
a transparent insulating layer interposed between the Mo layers, between the light absorbing columns, and between the buffer layers;
wherein each of the light absorbing columns has a diameter in a range of 10 nm to 100 μm,
wherein the transparent insulating layer surrounds the Mo layers, the light absorbing columns, and the buffer layers,
wherein the transparent insulating layer makes contact with a top surface of the first electrode layer, a lateral side of each Mo layer, a lateral side of each light absorbing column, and a lateral side of each buffer layer,
wherein a top surface of the transparent insulating layer is arranged lower than a top surface of the buffer layer and a top surface of the high resistance buffer layer,
wherein the high resistance buffer layer does not directly physically contact the transparent insulating layer,
wherein the buffer layers and the high resistance buffer layers are inserted into the second electrode layer,
wherein the second electrode layer makes contact with the lateral side of each buffer layer, the top surface of each high resistance buffer layer, and a lateral side of each high resistance buffer layer;
wherein the second electrode layer includes one selected from the group consisting of Al doped zinc oxide (AZO), indium tin oxide (ITO), and indium zinc oxide (IZO),
wherein the buffer layers include CdS, and
wherein the high resistance buffer layers include i-ZnO, which is zinc oxide not doped with impurities.

2. The solar cell apparatus of claim 1 , wherein the first and second electrode layers are transparent.

3. The solar cell apparatus of claim 1 , wherein the first electrode layer includes one selected from the group consisting of Al doped zinc oxide (AZO), indium tin oxide (ITO), and indium zinc oxide (IZO).

4. The solar cell apparatus of claim 1 , wherein the light absorbing columns are spaced apart from each other.

5. The solar cell apparatus of claim 1 , wherein the transparent insulating layer includes polymer.

6. The solar cell apparatus of claim 4 , wherein an interval between the light absorbing columns is in a range of from 100 nm to 100 μm.

7. The solar cell apparatus of claim 1 , wherein the buffer layers have a thickness in a range of from 30 nm to 70 nm.

8. The solar cell apparatus of claim 7 , wherein the high resistance buffer layers have a thickness in a range of from 50 nm to 100 nm.

9. The solar cell apparatus of claim 8 , wherein the second electrode layer has a thickness in a range of from 1 μm to 1.5 μm.

Assignees

• Park Kyung Eun
• Lg Innotek Co Ltd

Inventors

• Park Kyung Eun

Classifications

• H01L31/0749

  Electricity · mapped topic

• H01L31/068

  Electricity · mapped topic

• Y02E10/541

  CuInSe2 material PV cells · CPC title

• H01L31/035281 Primary

  Electricity · mapped topic

• H01L31/075

  Electricity · mapped topic