Array substrate and manufacturing method thereof
US-2024038786-A1 · Feb 1, 2024 · US
US9966390B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9966390-B2 |
| Application number | US-201615361724-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 28, 2016 |
| Priority date | May 13, 2002 |
| Publication date | May 8, 2018 |
| Grant date | May 8, 2018 |
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A display device includes first to fifth insulating films, first to third conductive films, semiconductor film, a planarization layer, an organic resin film, a pixel electrode, an opposing electrode and a light-emitting member. The first insulating film includes nitrogen. The second and third insulating films include oxygen. The fifth insulating film is an inorganic insulating film. The fourth insulating film, the fifth insulating film, the planarization layer and the organic resin film include first to fourth opening, respectively. An edge portion of the third opening and an edge portion of the fourth opening are rounded. Part of the third conductive film and part of the planarization layer are located in the second opening. Part of the pixel electrode and part of the organic resin film are located in the third opening. Part of the light-emitting member and part of the opposing electrode are located in the fourth opening.
Opening claim text (preview).
What is claimed is: 1. A display device comprising: a first insulating film comprising nitrogen; a second insulating film over the first insulating film, the second insulating film comprising oxygen; a first semiconductor film over the second insulating film; a third insulating film over the first semiconductor film, the third insulating film comprising oxygen; a first conductive film over the first semiconductor film with the third insulating interposed between the first conductive film and the first semiconductor film; a fourth insulating film over the first conductive film, the fourth insulating film comprising a first opening overlapping with the first conductive film; a second conductive film over the first conductive film with the fourth insulating film interposed between the first conductive film and the second conductive film, part of the second conductive film positioned in the first opening; a fifth insulating film over the fourth insulating film, the fifth insulating film being an inorganic insulating film; a third conductive film over the fifth insulating film; a planarization layer over the third conductive film; a pixel electrode over the planarization layer; an organic resin film over the pixel electrode; a light-emitting member over the pixel electrode and the organic resin film; and an opposing electrode over the light-emitting member, wherein the fifth insulating film comprises a second opening, wherein the planarization layer comprises a third opening, wherein the organic resin film comprises a fourth opening, wherein an edge portion of the third opening is rounded, wherein an edge portion of the fourth opening is rounded, wherein part of the third conductive film and part of the planarization layer are located in the second opening, wherein part of the pixel electrode and part of the organic resin film are located in the third opening, and wherein part of the light-emitting member and part of the opposing electrode are located in the fourth opening. 2. The display device according to claim 1 , wherein the first insulating film comprises oxygen. 3. The display device according to claim 1 , wherein the second insulating film comprises nitrogen. 4. The display device according to claim 1 , wherein the first semiconductor film is an active layer of an n-channel type transistor. 5. The display device according to claim 1 , wherein the third insulating film comprises nitrogen. 6. The display device according to claim 1 , wherein the first conductive film is a tantalum nitride film or a tungsten film. 7. The display device according to claim 1 , wherein the second conductive film is located over the fifth insulating film. 8. The display device according to claim 1 , wherein the fifth insulating film is a planarized insulating film. 9. The display device according to claim 1 , wherein the third conductive film comprises aluminum or copper. 10. The display device according to claim 1 , wherein the planarization layer is an inorganic insulating film. 11. The display device according to claim 1 , comprising a second semiconductor film over the second insulating film, wherein the third conductive film is in contact with the second semiconductor film. 12. The display device according to claim 1 , wherein a capacitor is formed by the first semiconductor film, the third insulating film, and the first conductive film. 13. A display device comprising: a first insulating film comprising nitrogen; a second insulating film over the first insulating film, the second insulating film comprising oxygen; a first semiconductor film over the second insulating film; a third insulating film over the first semiconductor film, the third insulating film comprising oxygen; a first conductive film over the first semiconductor film with the third insulating interposed between the first conductive film and the first semiconductor film; a fourth insulating film over the first conductive film, the fourth insulating film comprising a first opening overlapping with the first conductive film; a first planarization layer over the fourth insulating film; a second conductive film over the first planarization layer; a second planarization layer over the second conductive film; a pixel electrode over the second planarization layer; an organic resin film over the pixel electrode; a light-emitting member over the pixel electrode and the organic resin film; and an opposing electrode over the light-emitting member, wherein the first planarization layer comprises a second opening, wherein the second planarization layer comprises a third opening, wherein the organic resin film comprises a fourth opening, wherein an edge portion of the third opening is rounded, wherein an edge portion of the fourth opening is rounded, wherein part of the second conductive film and part of the second planarization layer are located in the second opening, wherein part of the pixel electrode and part of the organic resin film are located in the third opening, and wherein part of the light-emitting member and part of the opposing electrode are located in the fourth opening. 14. The display device according to claim 13 , wherein the first insulating film comprises oxygen. 15. The display device according to claim 13 , wherein the second insulating film comprises nitrogen. 16. The display device according to claim 13 , wherein the first semiconductor film is an active layer of an n-channel type transistor. 17. The display device according to claim 13 , wherein the third insulating film comprises nitrogen. 18. The display device according to claim 13 , wherein the first conductive film is a tantalum nitride film or a tungsten film. 19. The display device according to claim 13 , wherein the first planarization layer is an inorganic insulating film. 20. The display device according to claim 13 , wherein a capacitor is formed by the first semiconductor film, the third insulating film, and the first conductive film.
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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