Methods and apparatus for package with interposers

Patent metadata

Field	Value
Publication number	US-9966321-B2
Application number	US-201615335260-A
Country	US
Kind code	B2
Filing date	Oct 26, 2016
Priority date	Dec 6, 2012
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

An interposer may comprise a metal layer above a substrate. A dam or a plurality of dams may be formed above the metal layer. A dam surrounds an area of a size larger than a size of a die which may be connected to a contact pad above the metal layer within the area. A dam may comprise a conductive material, or a non-conductive material, or both. An underfill may be formed under the die, above the metal layer, and contained within the area surrounded by the dam, so that no underfill may overflow outside the area surrounded by the dam. Additional package may be placed above the die connected to the interposer to form a package-on-package structure.

First claim

What is claimed is:

1. A method of forming a device, comprising:
forming a metal layer above a substrate;
forming a first contact pad and a second contact pad above the metal layer; and
forming a first dam above the metal layer, the first dam comprising a first layer of conductive material and a second layer of non-conductive material over a top surface of the first layer of conductive material, wherein the first dam surrounds an area, the first contact pad being within the area, and the second contact pad being outside the area.

2. The method of claim 1 , wherein the conductive material is selected from a group consisting essentially of aluminum, copper, titanium, nickel, and combinations thereof.

3. The method of claim 1 , wherein the first dam and the first contact pad are formed simultaneously.

4. The method of claim 1 , wherein the non-conductive material is selected from a group consisting essentially of benzotriazole (BT), modified silicone, epoxy creasol novolac (ECN), modified BT, polyethyl sulfone (PES) polycarbonate, polysulfone, and combinations thereof.

5. The method of claim 1 , further comprising:
connecting a first die to the first contact pad above the metal layer within the area surrounded by the first dam.

6. The method of claim 5 , further comprising:
filling an underfill under the first die, above the metal layer, and contained within the area surrounded by the first dam.

7. The method of claim 1 , wherein the first dam continuously surrounds the area.

8. The method of claim 1 , wherein the first dam comprises discontinuous portions that are spaced around the area.

9. A method, comprising:
forming a redistribution layer over a substrate;
preparing a first contact pad and a second contact pad above the redistribution layer;
depositing a conductive first dam layer above the redistribution layer, the first dam layer surrounding the first contact pad, the second contact pad being outside the first dam layer surround;
depositing a non-conductive second dam layer on the first dam layer, the second dam layer covering a top surface of the first dam layer;
coupling a first die to the first contact pad; and
inserting an underfill under the first die, the underfill contacting inner sides of the first dam layer and the second dam layer, the inner sides facing the first die.

10. The method of claim 9 , wherein the first dam layer comprises a plurality of discontinuous segments.

11. The method of claim 9 , wherein conductive material comprising the first dam layer is selected from a group consisting essentially of aluminum, copper, titanium, nickel, or a combination thereof.

12. The method of claim 9 , further comprising:
attaching a connector to the second contact pad, the connector having a first diameter, wherein a first dam comprises the first dam layer and the second dam layer, wherein the first dam is a rectangular shape in plan view having a dam height in a range from about a size of a the first diameter to about 1/10 of the size of the first diameter of the connector.

13. The method of claim 9 , wherein a first dam comprises the first dam layer and the second dam layer, and the first dam is a shape of a circle, an octagon, a rectangle, an oval, or a diamond in plan view.

14. The method of claim 9 , wherein non-conductive material compising the second dam layer is selected from a group consisting essentially of benzotriazole (BT), modified silicone, epoxy creasol novolac (ECN), modified BT, polyethyl sulfone (PES) polycarbonate, polysulfone, or a combination thereof.

15. The method of claim 9 , further comprising:
depositing a second dam surrounding a first dam, the first dam comprising the first dam layer and the second dam layer.

16. The method of claim 9 , wherein the first dam layer and the first contact pad are formed simultaneously.

17. A method, comprising:
forming a first dam around a periphery of a die contact region of an interposer, the first dam comprising a first layer of conductive material and a second layer of non-conductive material over a top surface of the first layer of conductive material;
simultaneously with forming the first dam, forming a first contact pad on the interposer, the first contact pad located outside the die contact region;
mounting a die in the die contact region of the interposer; and
depositing an underfill material between the die and the die contact region, wherein the underfill material spreads further than the die contact region in plan view and contacts the first dam, wherein the underfill material is prevented by the first dam from contacting the first contact pad, and wherein the first dam comprises a conductive material.

18. The method of claim 17 , wherein the first dam comprises a plurality of discontinuous segments surrounding the die contact region.

19. The method of claim 17 , further comprising:
forming a second dam comprising a second conductive material laterally spaced from the first dam further from the die contact region.

20. The method of claim 17 , wherein the conductive material of the first dam layer is selected from a group consisting essentially of aluminum, copper, titanium, nickel, or a combination thereof.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lu Chun-Lin
• Wu Kai-Chiang
• Wang Yen-Ping
• Liang Shih-Wei
• Yang Ching-Feng

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title