Method of manufacturing semiconductor device and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-9966252-B2
Application number	US-201514681067-A
Country	US
Kind code	B2
Filing date	Apr 7, 2015
Priority date	Nov 20, 2009
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
(a) forming an oxide film on a substrate by alternately performing: (a-1) forming a layer containing a predetermined element by supplying a source gas containing the predetermined element to the substrate in a process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas, which are activated by heat or at least one of which is activated by plasma, to the substrate in the process vessel, wherein an inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and
(b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas, which are activated by heat or at least one of which is activated by plasma, to the substrate in the process vessel, wherein the inside of the process vessel is under a heated atmosphere having a pressure lower than the atmospheric pressure.

2. The method of claim 1 , wherein a temperature of the substrate in the (b) is higher than a temperature of the substrate in the (a-2); or a gas supply time of each of the gases in the (b) is longer than a gas supply time of each of the gases in the (a-2).

3. The method of claim 1 , wherein a temperature of the substrate in the (b) is higher than a temperature of the substrate in the (a).

4. The method of claim 1 , wherein a temperature of the substrate in the (b) is same as a temperature of the substrate in the (a).

5. The method of claim 1 , wherein the (a) and the (b) are alternately repeated.

6. The method of claim 1 , wherein in the (a-2), the oxygen-containing gas is reacted with the hydrogen-containing gas to form an oxidizing species, and the layer containing the predetermined element is changed into the oxide layer by using the oxidizing species, and in the (b), the oxygen-containing gas is reacted with the hydrogen-containing gas to form the oxidizing species, and the oxide film is modified using the oxidizing species.

7. The method of claim 1 , wherein in the (a-2), the oxygen-containing gas is reacted with the hydrogen-containing gas to form atomic oxygen, and the layer containing the predetermined element is changed into the oxide layer by using the atomic oxygen, and in the (b), the oxygen-containing gas is reacted with the hydrogen-containing gas to form the atomic oxygen, and the oxide film is modified using the atomic oxygen.

8. The method of claim 1 , wherein the oxygen-containing gas comprises at least one selected from a group consisting of O 2 gas and O 3 gas and the hydrogen-containing gas comprises at least one selected from a group consisting of H 2 gas and D 2 gas.

9. The method of claim 1 , wherein the predetermined element comprises at least one selected from a group consisting of a semiconductor element and a metal element.

10. The method of claim 1 , wherein the predetermined element comprises at least one selected from a group consisting of silicon (Si), zirconium (Zr), hafnium (Hf), titanium (Ti), and aluminium (Al).

11. The method of claim 1 , wherein the oxide film comprises at least one selected from a group consisting of a silicon oxide film and metal oxide film.

12. A method of manufacturing a semiconductor device, comprising:
(a) forming an oxide film on a substrate by alternately performing: (a-1) forming a layer containing a predetermined element by supplying a source gas containing the predetermined element to the substrate in a process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying a first oxygen-containing gas, which is activated by heat or plasma, to the substrate in the process vessel, wherein an inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and
(b) modifying the oxide film formed on the substrate by supplying a second oxygen-containing gas and a hydrogen-containing gas, which are activated by heat or at least one of which is activated by plasma, to the substrate in the process vessel, wherein the inside of the process vessel is under a heated atmosphere having a pressure lower than the atmospheric pressure.

13. The method of claim 12 , wherein the (a) and the (b) are alternately repeated.

14. The method of claim 12 , wherein the first oxygen-containing gas comprises at least one selected from a group consisting of O 2 gas, O 3 gas and H 2 O gas, the second oxygen-containing gas comprises at least one selected from a group consisting of O 2 gas and O 3 gas, and the hydrogen-containing gas comprises at least one selected from a group consisting of H 2 gas and D 2 gas.

15. A method of manufacturing a semiconductor device, comprising:
(a) forming an oxide film on a substrate by alternately performing: (a-1) forming a layer containing a predetermined element by supplying a source gas containing the predetermined element to the substrate in a process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying a first oxygen-containing gas, which is activated by plasma, to the substrate in the process vessel, wherein an inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and
(b) modifying the oxide film formed on the substrate by supplying a second oxygen-containing gas and a hydrogen-containing gas, at least one of which is activated by plasma, to the substrate in the process vessel, wherein the inside of the process vessel is under a heated atmosphere having a pressure lower than the atmospheric pressure.

Assignees

• Hitachi Int Electric Inc

Inventors

• Sasajima Ryota
• Hirose Yoshiro
• Ota Yosuke
• Akae Naonori
• Yokozawa Kojiro

Classifications

• H10P14/69397

  the material containing two or more metal elements · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title