Separate link and array error correction in a memory system

Patent metadata

Field	Value
Publication number	US-9965352-B2
Application number	US-201615151329-A
Country	US
Kind code	B2
Filing date	May 10, 2016
Priority date	Nov 20, 2015
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

A memory device may include link error correction code (ECC) decoder and correction circuitry. The ECC decoder and correction circuitry may be arranged in a write path and configured for link error detection and correction of write data received over a data link. The memory device may also include memory ECC encoder circuitry. The memory ECC encoder circuitry may be arranged in the write path and configured for memory protection of the write data during storage in a memory array.

First claim

What is claimed is:

1. A memory device, comprising:
a memory array; and
a write path coupled to the memory array, the write path comprising:
link error correction code (ECC) decoder and correction circuitry configured for link error detection and correction of write data received over a high speed serial memory link according to link ECC write data parity bits, the link ECC decoder and correction circuitry further configured to read the link ECC write data parity bits from unused data mask bits of the received write data during a normal write operation or from a mask write data byte of the received write data corresponding to an asserted data mask bit during a mask write operation of the received write data, and
memory ECC encoder circuitry configured for memory protection of the received write data during storage in the memory array.

2. The memory device of claim 1 , in which the memory ECC encoder circuitry generates memory ECC parity bits to protect the received write data during storage within the memory array.

3. The memory device of claim 1 , further comprising:
a read path coupled to the memory array, the read path comprising:
memory ECC decoder and correction circuitry configured for memory error detection and correction of data read from the memory array, and
link ECC encoder circuitry configured for link protection of the read data from the memory array.

4. The memory device of claim 3 , in which the memory ECC decoder and correction circuitry is configured to detect and correct memory errors of the read data from the memory array according to memory ECC parity bits.

5. The memory device of claim 3 , in which the link ECC encoder circuitry is further configured to generate link ECC read data parity bits to protect the read data during transmission over the high speed serial memory link.

6. The memory device of claim 5 , in which the link ECC encoder circuitry is further configured to embed the link ECC read data parity bits within data mask bits during transmission of the read data received over the high speed serial memory link.

7. The memory device of claim 1 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, a fixed location data unit, a server computing system and/or a vehicle control system.

8. A method of memory cell array and link error correction in a low power memory device, comprising:
receiving, at the low power memory device, write data over a high speed serial memory link from a host system-on-chip (SoC);
reading link error correction code (ECC) parity bits within unused data mask bits of the received write data during a normal write operation or within a mask write data byte of the received write data corresponding to an asserted data mask bit during a mask write operation;
verifying the received write data according to the link ECC parity bits; and
communicating, within the low power memory device, the verified write data to memory ECC encoder circuitry configured for memory protection of the recovered write data within a memory array of the low power memory device according to memory ECC parity bits.

9. The method of claim 8 , further comprising detecting and correcting of the received write data according to the link ECC parity bits when the write data is corrupted during transmission over the high speed serial memory link.

10. The method of claim 8 , further comprising integrating the low power memory sub-system into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, a fixed location data unit, a server computing system and/or a vehicle control system.

11. A memory sub-system, comprising:
a memory controller having an error correction code (ECC) encoder/decoder; and
a memory device coupled to the memory controller via at least a high speed serial memory link, the memory device, comprising:
a memory array; and
a write path coupled to the memory array, the write path comprising:
link ECC decoder and correction circuitry configured for detection and correction of link errors during transmission of write data received over the high speed serial memory link according to link ECC write data parity bits, the link ECC decoder and correction circuitry further configured to read the link ECC write data parity bits from unused data mask bits of the received write data during a normal write operation or from a mask write data byte of the received write data corresponding to an asserted data mask bit during a mask write operation of the received write data, and
memory ECC encoder circuitry configured for memory protection of the received write data during storage within the memory array according to memory ECC parity bits.

12. The memory sub-system of claim 11 , in which the memory controller is configured to directly access a read path to read data from the memory device and configured to detect and correct random bit errors and/or memory link errors within the read data from the memory device at the ECC encoder/decoder of the memory controller.

13. The memory sub-system of claim 11 , in which the memory device further comprises:
a read path coupled to the memory array, the read path comprising:
memory ECC decoder and correction circuitry configured for memory error detection and correction of read data from the memory array, and
link ECC encoder circuitry configured for link protection of the read data from the memory array.

14. The memory sub-system of claim 13 , in which the memory ECC decoder and correction circuitry is configured to detect and correct memory errors of the read data within the memory array according to read ECC parity bits.

15. The memory sub-system of claim 13 , in which the link ECC encoder circuitry is further configured to generate link ECC read data parity bits to protect the read data during transmission over the high speed serial memory link.

16. The memory sub-system of claim 13 , in which the link ECC encoder circuitry is further configured to embed the link ECC read data parity bits within data mask bits during transmission of the read data over the high speed serial memory link.

17. The memory sub-system of claim 11 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, a fixed location data unit, a server computing system and/or a vehicle control system.

18. A memory device, comprising:
a memory array; and
a write path coupled to the memory array, the write path comprising:
means for detecting and correcting link errors of write data received over a high speed serial memory link according to link ECC write data parity bits;
means for reading the link ECC write data parity bits from unused data mask bits of the received write data during a normal write operation or from a mask write data byte of the received write data corresponding to an asserted data mask bit during a mask write operation of the received write data; and
means for protecting the write data during storage in the memory array.

19. The memory device of claim 18 , further comprising:
a read path coupled to the memory array, the read path comprising:
means for detecting and correcting memory errors of the received write data during storage

Assignees

• Qualcomm Inc

Inventors

• Suh Jungwon
• West David Ian

Classifications

• G06F3/064

  Management of blocks · CPC title

• G11C29/52

  Protection of memory contents; Detection of errors in memory contents · CPC title

• G06F11/1068 Primary

  in sector programmable memories, e.g. flash disk (G06F11/1072 takes precedence) · CPC title

• G06F3/0679

  Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title

• G06F11/1048 Primary

  using arrangements adapted for a specific error detection or correction feature · CPC title