Method for producing a gas sensor device for detecting at least one gaseous analyte, and gas sensor device for detecting at least one gaseous analyte

US9964514B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9964514-B2
Application numberUS-201515527601-A
CountryUS
Kind codeB2
Filing dateOct 9, 2015
Priority dateDec 2, 2014
Publication dateMay 8, 2018
Grant dateMay 8, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for producing a gas sensor device for detecting a gaseous analyte includes providing a sensor body comprising a semiconductor substrate, in which a cavity section is shaped, and a solid electrolyte layer arranged at a surface of the substrate. The electrolyte layer is not covered by the substrate in the cavity section. The method includes producing a signal conductor layer deposited dry-chemically at a substrate side of the sensor body, such that, in the region of the electrolyte layer not covered by the substrate in the cavity section, a cutout section is shaped in the signal conductor layer, in which the signal conductor layer is removed or not deposited. The method includes applying measuring electrodes to the electrolyte layer by a wet-chemical process. One measuring electrode is arranged in the cutout section and one measuring electrode is arranged on an electrolyte layer side of the sensor body.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for producing a gas sensor device for detecting at least one gaseous analyte, the method comprising: providing a sensor main body comprising a semiconductor substrate, in which at least one cavity section is shaped, and a solid electrolyte layer arranged at a first main surface of the semiconductor substrate, wherein the solid electrolyte layer is left free of the semiconductor substrate in the at least one cavity section; producing a signal conductor layer deposited dry-chemically at a semiconductor substrate side of the sensor main body, such that, in a region of the solid electrolyte layer not covered by the semiconductor substrate in the at least one cavity section, at least one cutout section is shaped in the signal conductor layer, in which the signal conductor layer is cut out; and applying at least two measuring electrodes to the solid electrolyte layer by a wet-chemical process, wherein a first measuring electrode is arranged in the at least one cutout section of the signal conductor layer and a second measuring electrode is arranged on a solid electrolyte layer side of the sensor main body. 2. The method as claimed in claim 1 , wherein: producing a signal conductor layer includes depositing the signal conductor layer dry-chemically and removing the signal conductor layer by selective laser ablation in the at least one cutout section. 3. The method as claimed in claim 2 , wherein: removing the signal conductor layer by selective laser ablation includes performing selective laser ablation from the semiconductor substrate side of the sensor main body and/or performing selective laser ablation from the solid electrolyte layer side of the sensor main body through the solid electrolyte layer, wherein the solid electrolyte layer is transparent to laser light used during the laser ablation. 4. The method as claimed in claim 1 , wherein: producing a signal conductor layer includes depositing the signal conductor layer dry-chemically in a defined deposition direction; and depending on the deposition direction and a geometry of the at least one cavity section, the at least one cutout section is shaded from a material of the signal conductor layer. 5. The method as claimed in claim 1 , wherein: providing a sensor main body includes providing the sensor main body, in the semiconductor substrate of which the at least one cavity section is shaped with a depth of more than 100 micrometers. 6. The method as claimed in claim 1 , further comprising: coating the semiconductor substrate with a passivation layer, wherein coating the semiconductor substrate is carried out before producing the signal conductor layer. 7. The method as claimed in claim 1 , wherein: producing the signal conductor layer includes depositing the signal conductor layer dry-chemically and covering the signal conductor layer with a masking layer; the masking layer is removed by selective laser ablation in the at least one cutout section; and the signal conductor layer is removed in the at least one cutout section. 8. A device configured to carry out the method as claimed in claim 1 . 9. The method as claimed in claim 1 , wherein providing a sensor main body, producing a signal conductor layer, and applying at least two measuring electrodes are carried out via a computer processor executing a computer program stored on a non-transitory computer readable medium. 10. A gas sensor device for detecting at least one gaseous analyte, wherein the gas sensor device comprises: a sensor main body, including: a semiconductor substrate, in which at least one cavity section is shaped; and a solid electrolyte layer arranged at a first main surface of the semiconductor substrate, wherein the solid electrolyte layer is left free of the semiconductor substrate in the at least one cavity section; a signal conductor layer deposited dry-chemically at a semiconductor substrate side of the sensor main body, wherein in the region of the solid electrolyte layer not covered by the semiconductor substrate in the at least one cavity section, at least one cutout section is shaped in the signal conductor layer, in which the signal conductor layer is cut out; and at least two measuring electrodes applied to the solid electrolyte layer by a wet-chemical process, wherein a first measuring electrode is arranged in the at least one cutout section of the signal conductor layer and a second measuring electrode is arranged on a solid electrolyte layer side of the sensor main body.

Assignees

Inventors

Classifications

  • G01N27/407Primary

    for investigating or analysing gases {(G01N27/411 takes precedence)} · CPC title

  • using cells {, i.e. more than one cell} and probes with solid electrolytes · CPC title

  • caused by changes in the thermal conductivity of a surrounding material to be tested (G01N27/20 takes precedence) · CPC title

  • using sensor elements of laminated structure · CPC title

  • Calibrating or checking the analyser · CPC title

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What does patent US9964514B2 cover?
A method for producing a gas sensor device for detecting a gaseous analyte includes providing a sensor body comprising a semiconductor substrate, in which a cavity section is shaped, and a solid electrolyte layer arranged at a surface of the substrate. The electrolyte layer is not covered by the substrate in the cavity section. The method includes producing a signal conductor layer deposited dr…
Who is the assignee on this patent?
Bosch Gmbh Robert
What technology area does this patent fall under?
Primary CPC classification G01N27/407. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 08 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).