Display panel and preparation method therefor, and display device and health monitoring method thereof

Patent metadata

Field	Value
Publication number	US-9961427-B2
Application number	US-201615519898-A
Country	US
Kind code	B2
Filing date	Feb 3, 2016
Priority date	Sep 17, 2015
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A display panel and manufacturing method thereof, and a display device and health monitoring method thereof. The display panel includes a base substrate and a sonic sensor disposed on the base substrate. The sonic sensor is configured to monitor a sonic wave.

First claim

What is claimed is:

1. A display panel, comprising:
a base substrate; and
a sonic sensor disposed on the base substrate, wherein the sonic sensor is configured to monitor a sonic wave;
wherein the sonic sensor includes:
a first electrode layer disposed on the base substrate;
a silicon backboard disposed on the first electrode layer;
a supporting layer disposed on the silicon backboard;
a first film layer disposed on the supporting layer;
a second electrode layer disposed on the first film layer; and
a second film layer disposed on the second electrode layer,
wherein the first film layer and the second film layer are Mylar film layers; and a connected sound hole is formed on the first electrode layer, the silicon backboard, the supporting layer and the first film layer.

2. The display panel according to claim 1 , further comprising a thin-film transistor (TFT) disposed on the base substrate, wherein:
the TFT includes a gate layer, a gate insulating layer, a polysilicon active layer and a source/drain electrode layer;
the TFT is disposed on a metal barrier layer of the base substrate and is isolated from the metal barrier layer through an insulating layer;
the first electrode layer of the sonic sensor is arranged in the same layer with the metal barrier layer;
the silicon backboard of the sonic sensor is arranged in the same layer with the polysilicon active layer in the TFT;
the supporting layer of the sonic sensor is arranged in the same layer with the gate insulating layer of the TFT; and
the second electrode layer of the sonic sensor is arranged in the same layer with the gate layer of the TFT.

3. The display panel according to claim 1 , wherein material of the supporting layer is silicon dioxide or silicon nitride.

4. The display panel according to claim 1 , wherein the first film layer and the second film layer each include a first silicon nitride layer, a polysilicon layer disposed on the first silicon nitride layer, and a second silicon nitride layer disposed on the polysilicon layer.

5. The display panel according to claim 1 , wherein the base substrate, the first electrode layer, the silicon backboard, the supporting layer and the first film layer are each provided with a through hole at a same position, and respective through holes disposed on the base substrate, the first electrode layer, the silicon backboard, the supporting layer and the first film layer are connected to form the connected sound hole.

6. The display panel according to claim 1 , wherein the display panel is a liquid crystal display (LCD) panel, and the LCD panel further comprises a first barrier layer, a first passivation layer, a second barrier layer, a first transparent conductive layer, a second passivation layer and a second transparent electrode layer that are disposed on the second film layer.

7. The display panel according to claim 1 , wherein the display panel further comprises a TFT disposed on the base substrate, and the TFT includes a gate layer, a gate insulating layer, an amorphous silicon (a-Si) active layer and a source/drain electrode layer;
the first electrode layer of the sonic sensor is arranged in the same layer with the gate layer of the TFT;
the silicon backboard of the sonic sensor is arranged in the same layer with the a-Si active layer; and
the second electrode layer of the sonic sensor is arranged in the same layer with the source/drain electrode layer of the TFT.

8. The display panel according to claim 7 , wherein the first film layer and the second film layer each include a first silicon nitride layer, an a-Si layer disposed on the first silicon nitride layer, and a second silicon nitride layer disposed on the a-Si layer.

9. The display panel according to claim 7 , wherein the base substrate, the first electrode layer, the silicon backboard, the supporting layer and the first film layer are each provided with a through hole at a same position, and respective through holes disposed on the base substrate, the first electrode layer, the silicon backboard, the supporting layer and the first film layer are connected to form the connected sound hole.

10. The display panel according to claim 7 , wherein the display panel is an LCD panel, and the LCD panel further comprises a passivation layer and a transparent conductive layer that are disposed on the second film layer.

11. The display panel according to claim 1 , wherein the connected sound hole is a straight through hole or a horn-shaped hole.

12. The display panel according to claim 1 , wherein the display panel is an organic light-emitting diode (OLED) display panel.

13. A method for manufacturing the display panel according to claim 1 , comprising:
forming the first electrode layer on the base substrate;
forming the silicon backboard on the first electrode layer;
forming the supporting layer on the silicon backboard;
forming the first film layer on the supporting layer;
forming the connected sound hole on the first film layer, the first electrode layer, the supporting layer and the silicon backboard;
forming the second electrode layer on the first film layer; and
forming the second film layer on the second electrode layer.

14. The method for manufacturing the display panel according to claim 13 , further comprising:
forming an active layer of a thin-film transistor (TFT) by a patterning process in a process of forming the silicon backboard; and
forming a gate layer of the TFT by another patterning process in a process of forming the second electrode layer.

15. The method for manufacturing the display panel according to claim 13 , further comprising:
forming a gate layer by a patterning process in a process of forming the first electrode layer; and
forming a source electrode and a drain electrode of TFT by another patterning process in a process of forming the second electrode layer.

16. A display device, comprising a display panel, wherein the display panel comprises:
a base substrate; and
a sonic sensor disposed on the base substrate, wherein the sonic sensor is configured to monitor a sonic wave;
wherein the sonic sensor includes:
a first electrode layer disposed on the base substrate;
a silicon backboard disposed on the first electrode layer;
a supporting layer disposed on the silicon backboard;
a first film layer disposed on the supporting layer;
a second electrode layer disposed on the first film layer; and
a second film layer disposed on the second electrode layer,
wherein the first film layer and the second film layer are Mylar film layers; and a connected sound hole is formed on the first electrode layer, the silicon backboard, the supporting layer and the first film layer.

17. The display device according to claim 16 , wherein the sonic sensor of the display panel is used for health monitoring, and the display device further comprises:
an alarm device; and
a control device configured to receive a sound amplitude monitored by the sonic sensor of the display panel, compare the sound amplitude with a default threshold, and control the alarm device to give out an alarm when the sound amplitude exceeds the default threshold.

18. The display device according to claim 17 , wherein the control device is also configured to control the alarm device to give out another alarm when the sound amplitude is below another default threshold, and control a volume adjuster of the display device to increase the volume to be within a default range when a user selects to increase the volume.

19. A health monitoring method of the displ

Assignees

• Boe Technology Group Co Ltd
• Beijing Boe Optoelectronics Tech Co Ltd

Inventors

• Yang Jiuxia
• Qiu Yun
• Wang Zhidong

Classifications

• G09F9/335

  being organic light emitting diodes [OLED] · CPC title

• H03G3/32

  the control being dependent upon ambient noise level or sound level · CPC title

• H01L27/3225

  Electricity · mapped topic

• H01L27/3262

  Electricity · mapped topic

• H04R31/00

  Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor {(manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182)} · CPC title