Insulated gate bipolar transistor driving circuit

Patent metadata

Field	Value
Publication number	US-9960766-B2
Application number	US-201515108593-A
Country	US
Kind code	B2
Filing date	Dec 22, 2015
Priority date	Jul 15, 2015
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

The present disclosure provides an IGBT driving circuit, including an optocoupler chip and a power amplification circuit. The optocoupler chip includes an isolation amplification unit and a fault protection unit, and the fault protection unit includes a desaturation module and a fault feedback module. The desaturation module is configured to transmit a warning signal to the fault feedback module when detecting that a potential of a collector of the IGBT is overhigh or the potential of the collector of the IGBT changes overfast. The fault feedback module is configured to transmit a fault control signal to the external controller after receiving the warning signal so as to control the external driving signal outputted by the external controller and enable the isolation amplification unit to output an IGBT driving signal for controlling a shutdown of the IGBT.

First claim

What is claimed is:

1. An insulated gate bipolar transistor (IGBT) driving circuit, comprising:
an optocoupler chip; and
a power amplification circuit,
wherein:
the optocoupler chip comprises an isolation amplification unit and a fault protection unit, and the fault protection unit comprises a desaturation module and a fault feedback module,
the isolation amplification unit is configured to carry out optoelectric isolation on an external driving signal inputted by an external controller and amplify the isolated external driving signal so as to obtain an IGBT driving signal,
the power amplification circuit is configured to carry out power amplification on the IGBT driving signal and output the amplified IGBT driving signal to a gate electrode of an IGBT,
the desaturation module is configured to transmit a warning signal to the fault feedback module when detecting that a potential of a collector of the IGBT is overhigh or the potential of the collector of the IGBT changes overfast,
the fault feedback module is configured to transmit a fault control signal to the external controller after receiving the warning signal so as to control the external driving signal outputted by the external controller and enable the isolation amplification unit to output an IGBT driving signal for controlling the IGBT to be turned off,
the power amplification circuit comprises a push-pull power amplification unit,
the push-pull power amplification unit comprises:
a first transistor, a gate electrode of which is connected to the IGBT driving signal, a first electrode of which is connected to a first voltage, and a second electrode of which is connected to the gate electrode of the IGBT,
a second transistor, a gate electrode of which is connected to the IGBT driving signal, a first electrode of which is connected to a second voltage, and a second electrode of which is connected to the gate electrode of the IGBT,
a first resistor, which is connected between the gate electrode of the first transistor and the second electrode of the first transistor, and
a first capacitor, which is connected between the gate electrode of the second transistor and the first electrode of the second transistor, and

the power amplification circuit further comprises:
a second resistor, which is connected between an IGBT driving signal output end of the optocoupler chip and the gate electrode of the first transistor,
a third resistor, which is connected between the second electrode of the first transistor and the gate electrode of the IGBT,
a fourth resistor, which is connected between the first electrode of the second transistor and the second electrode of the second transistor,
a voltage regulator, which is connected between the gate electrode of the IGBT and the ground, and configured to stabilize the amplified IGBT driving signal, and
a first filter which is connected between the gate electrode of the IGBT and the ground, and configured to filter the amplified IGBT driving signal.

2. The IGBT driving circuit according to claim 1 , wherein the fault protection unit further comprises a voltage clamping module, which is configured to transmit the warning signal to the fault feedback module or clamp the potential of the collector of the IGBT when detecting that the potential of the collector of the IGBT is overhigh or the potential of the collector of the IGBT changes overfast.

3. The IGBT driving circuit according to claim 1 , wherein the voltage regulator comprises:
a first Zener diode, a cathode of which is connected to the gate electrode of the IGBT, and
a second Zener diode, an anode of which is connected to an anode of the first Zener diode, and a cathode of which is connected to the ground.

4. The IGBT driving circuit according to claim 1 , wherein:
the first filter comprises a fifth resistor and a second capacitor connected in parallel,
a first end of the fifth resistor is connected to the gate electrode of the IGBT, and a second end of the fifth resistor is connected to the ground, and
an emitter of the IGBT is connected to the ground.

5. An insulated gate bipolar transistor (IGBT) driving circuit, comprising:
an optocoupler chip; and
a power amplification circuit,
wherein:
the optocoupler chip comprises an isolation amplification unit and a fault protection unit, and the fault protection unit comprises a desaturation module and a fault feedback module,
the isolation amplification unit is configured to carry out optoelectric isolation on an external driving signal inputted by an external controller and amplify the isolated external driving signal so as to obtain an IGBT driving signal,
the power amplification circuit is configured to carry out power amplification on the IGBT driving signal and output the amplified IGBT driving signal to a gate electrode of an IGBT,
the desaturation module is configured to transmit a warning signal to the fault feedback module when detecting that a potential of a collector of the IGBT is overhigh or the potential of the collector of the IGBT changes overfast,
the fault feedback module is configured to transmit a fault control signal to the external controller after receiving the warning signal so as to control the external driving signal outputted by the external controller and enable the isolation amplification unit to output an IGBT driving signal for controlling the IGBT to be turned off,
the IGBT driving circuit further comprises a collector potential detection unit, which is connected to the collector of the IGBT, and is connected to the desaturation module through a DESAT pin of the optocoupler chip,
the desaturation module is configured to detect whether the potential of the collector of the IGBT is overhigh and whether the potential of the collector of the IGBT changes overfast through the collector potential detection unit,
when the desaturation module in the optocoupler chip detects that the potential of the collector of the IGBT is overhigh or the potential of the collector of the IGBT changes overfast, the fault feedback module in the optocoupler chip transmits the fault control signal to the external controller through a FAULT pin, and
the collector potential detection unit comprises,
a third capacitor, a first end of which is connected to a VE pin of the optocoupler chip, and a second end of which is connected to the DESAT pin,
a sixth resistor, a first end of which is connected to the first end of the third capacitor,
a first diode, an anode of which is connected to a second end of the sixth resistor, and a cathode of which is connected to the collector of the IGBT, and
a third Zener diode, a cathode of which is connected to the VE pin of the optocoupler chip through the third capacitor, and an anode of which is connected to the ground.

6. The IGBT driving circuit according to claim 5 , wherein when a voltage applied to a VDD pin of the optocoupler chip is smaller than a predetermined voltage, the optocoupler chip stops working.

7. The IGBT driving circuit according to claim 5 , further comprising:
a fourth capacitor, a first end of which is connected to a VCLAMP pin of the optocoupler chip, and a second end of which is connected to a VDD pin of the optocoupler chip, and
a second filter, which is connected between the VDD pin of the optocoupler chip and the VE pin of the optocoupler chip.

8. The IGBT driving circuit according to claim 7 , wherein the second filter comprises a fifth capacitor and a seventh resistor connected in parallel.

9. The IGBT driving circuit according to claim 5 , wherein the optocoupler chip is connected to the external driving signal inputted by the external controller through a VLED-pin, and outputs the IGBT driving signal through a VO pin.

Assignees

• Boe Technology Group Co Ltd
• Beijing Boe Energy Tech Co Ltd
• Beijing Boe Tech Co Ltd

Inventors

• Wang Qingmeng
• Han Xiaoyan

Classifications

• H03K17/163

  Soft switching · CPC title

• H03F3/08 Primary

  controlled by light · CPC title

• H03F3/3069

  the emitters of complementary power transistors being connected to the output · CPC title

• H03K5/08

  by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding (H03K5/07 takes precedence; comparing one pulse with another H03K5/22; providing a determined threshold for switching H03K17/30) · CPC title

• H03F3/26

  Push-pull amplifiers; Phase-splitters therefor (duplicated single-ended push-pull arrangements or phase-splitters therefor H03F3/30) · CPC title