Preparation of copper-rich copper indium (gallium) diselenide/disulfide nanoparticles

Patent metadata

Field	Value
Publication number	US-9960298-B2
Application number	US-201414541861-A
Country	US
Kind code	B2
Filing date	Nov 14, 2014
Priority date	Nov 15, 2013
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A method for the preparation of copper indium gallium diselenide/disulfide (CIGS) nanoparticles utilizes a copper-rich stoichiometry. The copper-rich CIGS nanoparticles are capped with organo-chalcogen ligands, rendering the nanoparticles processable in organic solvents. The nanoparticles may be deposited on a substrate and thermally processed in a chalcogen-rich atmosphere to facilitate conversion of the excess copper to copper selenide or copper sulfide that may act as a sintering flux to promote liquid phase sintering and thus the growth of large grains. The nanoparticles so produced may be used to fabricate CIGS-based photovoltaic devices.

First claim

What is claimed is:

1. A method for preparing copper-rich CIGS nanoparticles having the general formula Cu x In y Ga z S a Se b , wherein y+z=1, a+b=2, and x>y+z, the method comprising:
heating a copper salt together with at least one salt selected from the group consisting of indium salts and gallium salts in a solvent at a first temperature to produce a reaction solution;
adding an organo-chalcogen precursor to the reaction solution;
heating the reaction solution to a second temperature while stirring for a first time interval;
cooling the reaction solution to a third temperature, the third temperature being between the second temperature and room temperature;
stirring the reaction solution for a second time interval at the third temperature to anneal the reaction solution, the second time interval being between about 4 hours and about 24 hours;
cooling the reaction solution from the third temperature to room temperature; and
isolating nanoparticles from the reaction solution.

2. The method recited in claim 1 wherein the molar ratio of Cu salts to the combined total of In and Ga salts is between about 1:0.65 and about 1:0.85.

3. The method recited in claim 1 wherein the group consisting of copper salts, indium salts and gallium salts comprises salts selected from the group consisting of acetates, acetylacetonates, chlorides, bromides, and iodides.

4. The method recited in claim 1 wherein the solvent is a non-coordinating solvent.

5. The method recited in claim 4 wherein the non-coordinating solvent is selected from the group consisting of 1-octadecene, benzylether, diphenylether and heat transfer fluids comprising hydrogenated terphenyls.

6. The method recited in claim 1 wherein the first temperature is between room temperature and about 100° C.

7. The method recited in claim 1 wherein the organo-chalcogen precursor is of the form R—X—H, where R is an alkyl or aryl group and X is sulfur or selenium.

8. The method recited in claim 1 wherein the organo-chalcogen precursor is selected from the group consisting of 1-octanethiol, 1-octane selenol, and 1-dodecane selenol.

9. The method recited in claim 1 wherein the second temperature is higher than the first temperature.

10. The method recited in claim 9 wherein second temperature is between about 160° C. and about 240° C.

11. The method recited in claim 1 wherein the second time interval is around 18 hours.

12. The method recited in claim 1 wherein isolating the nanoparticles comprises precipitating the nanoparticles from the reaction solution by the addition of at least one other solvent.

Assignees

• Nanoco Technologies Ltd

Inventors

• Newman Christopher
• Masala Ombretta
• Kirkham Paul
• Allen Cary
• Whitelegg Stephen

Classifications

• H01L31/0322 Primary

  Electricity · mapped topic

• C01P2004/03

  obtained by SEM · CPC title

• C01B19/002

  Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions · CPC title

• C01P2006/40

  Electric properties · CPC title

• Y02E10/541

  CuInSe2 material PV cells · CPC title