Electronic device

Patent metadata

Field	Value
Publication number	US-9960239-B2
Application number	US-201415100689-A
Country	US
Kind code	B2
Filing date	Dec 7, 2014
Priority date	Dec 8, 2013
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

An electronic device is presented; the device comprises an electrode structure located in electrical contact with a semiconducting element. The electrode structure is configured with two or more groups of regions comprising regions of a first group having first charge injection properties and regions of a second group having second charge injection properties being lower than the first charge injection properties. The regions of the second group are configured to provide barrier for injection of charge carriers from regions of the first group into the semiconductor element to thereby allow tailoring of desired electronic properties of the device.

First claim

The invention claimed is:

1. An electronic device comprising a source electrode and a drain electrode separated between them and located in electrical contact with a semiconducting channel region; the source electrode is configured as electrode structure forming a patterned source electrode, comprising one or more regions of discontinuity in electrical conductivity along surface of the electrode structure, and having two or more groups of regions comprising regions of a first group having first charge injection properties and regions of a second group having second charge injection properties being lower than the first charge injection properties; regions of the second group being configured to provide barrier for injection of charge carriers from regions of the first group of the source electrode into the semiconductor channel region.

2. The electronic device of claim 1 , wherein said regions of the second group being configured to provide geometrical barrier for injection of charge carriers from regions of the first group into the semiconductor channel region.

3. The electronic device of claim 1 , wherein said source electrode structure comprises at least first and second layers, a first layer comprising regions of the first group and a second layer comprising regions of the second group.

4. The electronic device of claim 3 , wherein at least one of the first and second layers is configured as a multi-layered structure, said multi layered structure comprising at least two of a conducting layer, a semiconducting layer, and an insulating layer.

5. The electronic device of claim 1 , wherein said one or more regions of discontinuity of the electrode structure being configured as one or more holes along surface of the electrodes.

6. The electronic device of claim 1 , wherein said one or more regions of discontinuity in electrical conductivity being configured such that regions of the second group skirts over the edges of the regions of the first group.

7. The electronic device of claim 1 , wherein at least one region of the second group covers at least one region of the first group.

8. The electronic device of claim 1 , wherein the electrode structure is configured to have at least one of the following configurations: step-source edge geometry, tilted edge geometry and curved edge geometry in at least one discontinuity region.

9. The electronic device of claim 1 , wherein regions of the first group comprising a conducting material selected from: Li, Ca, Mg, Al, Ag, ZnO, Au, and regions of the second group comprise a conductive material selected from: Al, Ag, Au, MoO 3 , Pt and Se.

10. The electronic device of claim 1 , wherein regions of the first group comprising a conducting material selected from: Al, Ag, Au, MoO 3 , Pt, Se, and regions of the second group comprise a conductive material selected from: Li, Ca, Mg, Al, Ag, ZnO and Au.

11. The electronic device of claim 1 , wherein the source electrode structure is configured as a layered electrode structure comprising a first layer being of the first group and a second layer being of the second group, said second layer being attached to at least one surface of the first layer.

12. The electronic device of claim 1 , wherein the device being configured as a diode.

13. The electronic device of claim 1 , wherein the device being configured as a vertical type transistor structure, the source electrode structure being configured as a patterned electrode structure.

14. The electronic device of claim 1 , wherein regions of the first and second groups of said electrode structure being configured with electronically conductive materials having selected first and second charge injection properties.

15. An electronic device comprising a source electrode and a drain electrode separated between them and located in electrical contact with a semiconducting channel region; the source electrode is configured as electrode structure comprising at least first and second layers and two or more groups of regions, wherein the first layer comprises regions of the first group having first charge injection properties and the second layer comprises regions of the second group having second charge injection properties being lower than the first charge injection properties; regions of the second group being configured to provide barrier for injection of charge carriers from regions of the first group of the source electrode into the semiconductor channel region; wherein at least one of the first and second layers is configured as a multi-layered structure, said multi layered structure comprising at least two of a conducting layer, a semiconducting layer, and an insulating layer.

Assignees

• Technion Res & Dev Foundation

Inventors

• Tessler Nir
• Ben Sasson Ariel Jaques
• Greenman Michael

Classifications

• H01L51/105

  Electricity · mapped topic

• H01L29/0847

  Electricity · mapped topic

• H01L29/7827

  Electricity · mapped topic

• H01L29/861

  Electricity · mapped topic

• H01L51/057

  Electricity · mapped topic