Optoelectronic device comprising light-emitting diodes

Patent metadata

Field	Value
Publication number	US-9960205-B2
Application number	US-201415022912-A
Country	US
Kind code	B2
Filing date	Sep 30, 2014
Priority date	Sep 30, 2013
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

An optoelectronic device including a semiconductor substrate including first and second opposing faces, a first set of first light-emitting diodes resting on a first portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a first electrode covering each first light-emitting diode, a first conductive portion insulated from the substrate, extending through the substrate and connected to the first electrode; a second set of second light-emitting diodes resting on a second portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a second electrode covering each second light-emitting diode, a second conductive portion insulated from the substrate and connected to the second electrode, and a first conductive element connecting the first conductive portion to the second portion of the substrate on the side of the second face.

First claim

The invention claimed is:

1. An optoelectronic device comprising:
a substrate, wherein the substrate is a doped semiconductor substrate of a first conductivity type, the substrate comprising a first surface and a second surface opposite the first surface;
a first assembly of first light-emitting diodes supported by a first portion of the substrate and comprising first wire-shaped, conical, or frustoconical semiconductor elements;
a first electrode, at least partially transparent, covering each first light-emitting diode;
a first insulated conductive portion insulated from the substrate and crossing the substrate from the second surface to at least the first surface and connected to the first electrode;
a second assembly of second light-emitting diodes supported by a second portion of the substrate and comprising second wire-shaped, conical, or frustoconical semiconductor elements;
a second electrode, at least partially transparent, covering each second light-emitting diode;
a second insulated conductive portion insulated from the substrate and crossing the substrate from the second surface to at least the first surface and connected to the second electrode; and
a first conductive element, electrically connecting on the second surface side the first insulated conductive portion to the second substrate portion, wherein the first assembly of first light-emitting diodes is connected in series with the second assembly of second light-emitting diodes.

2. The optoelectronic device of claim 1 , wherein the first portion of the substrate is insulated from the second portion of the substrate by the first insulated conductive portion.

3. The optoelectronic device of claim 2 , comprising a first lateral edge and a second lateral edge opposite the first lateral edge and wherein the first insulated conductive portion extends from the first to the second lateral edge.

4. The optoelectronic device of claim 2 , wherein the first insulated conductive portion surrounds the first substrate portion.

5. The optoelectronic device of claim 1 , comprising an insulating portion, different from the first insulated conductive portion and insulating the first portion of the substrate from the second portion of the substrate.

6. The optoelectronic device of claim 5 , comprising a first lateral edge and a second lateral edge opposite the first lateral edge and wherein the insulating portion extends from the first lateral edge to the second lateral edge.

7. The optoelectronic device of claim 5 , wherein the insulating portion surrounds the first portion of the substrate.

8. The optoelectronic device of claim 1 , comprising a first conductive pad on the second surface in contact with the first portion of the substrate.

9. The optoelectronic device of claim 1 , wherein the substrate is selected from the group comprising silicon, germanium, silicon carbide, and III-V compounds.

10. The optoelectronic device of claim 1 , wherein the dopant concentration of the substrate is in the range from 5*10 16 to 2*10 20 atoms/cm 3 .

11. The optoelectronic device of claim 1 , wherein the light-emitting diodes of the first assembly are capable of emitting light at a first wavelength and wherein the light-emitting diodes of the second assembly are capable of emitting light at a second wavelength different from the first wavelength.

12. The optoelectronic device of claim 1 , further comprising:
a third assembly of third light-emitting diodes supported by a third portion of the substrate and comprising third wire-shaped, conical, or frustoconical semiconductor elements;
a third electrode, at least partially transparent, covering each third light-emitting diode;
a third conductive portion insulated from the substrate and crossing the substrate from the second surface to at least the first surface and connected to the third electrode; and
a second conductive element, connecting on the second surface side the second conductive portion of the third portion of the substrate.

13. The optoelectronic device of claim 12 , wherein the light-emitting diodes of the third assembly are capable of emitting light at a third wavelength different from the first and second wavelengths.

14. The optoelectronic device of claim 13 , wherein the surfaces of the first, second, and third assemblies are selected so that the composition of the light at the first, second, and third emitted wavelengths corresponds to an emitted white light.

15. The optoelectronic device of claim 13 , wherein one of the first, second, or third wavelengths corresponds to blue light, another one of the first, second, or third wavelengths corresponds to green light, and another one of the first, second, or third wavelengths corresponds to red light.

16. The optoelectronic device of claim 1 , comprising from four to more than one hundred assemblies of light-emitting diodes series-connected by conductive portions insulated from the substrate and crossing the substrate from the second surface to at least the first surface.

Assignees

• Aledia

Inventors

• Bouvier Christophe
• Dornel Erwan

Classifications

• H01L33/24

  Electricity · mapped topic

• H01L2933/0066

  Electricity · mapped topic

• H01L33/38

  Electricity · mapped topic

• H01L2933/0025

  Electricity · mapped topic

• H01L33/44

  Electricity · mapped topic