Methods for transferring heat from stacked microfeature devices

Patent metadata

Field	Value
Publication number	US-9960148-B2
Application number	US-201213367158-A
Country	US
Kind code	B2
Filing date	Feb 6, 2012
Priority date	Aug 25, 2004
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

Methods and apparatuses for transferring heat from stacked microfeature devices are disclosed herein. In one embodiment, a microfeature device assembly comprises a support member having terminals and a first microelectronic die having first external contacts carried by the support member. The first external contacts are operatively coupled to the terminals on the support member. The assembly also includes a second microelectronic die having integrated circuitry and second external contacts electrically coupled to the first external contacts. The first die is between the support member and the second die. The assembly can further include a heat transfer unit between the first die and the second die. The heat transfer unit includes a first heat transfer portion, a second heat transfer portion, and a gap between the first and second heat transfer portions such that the first external contacts and the second external contacts are aligned with the gap.

First claim

We claim:

1. A method for assembling a microfeature device assembly, comprising:
positioning a first microelectronic die on a front side of an interposer substrate having terminals, the first die having a first planform shape and including first external contacts electrically coupled to the terminals;
attaching a heat transfer unit to the first die, the heat transfer unit having a first portion and a second portion in contact with the first die, wherein the second portion is out of mechanical contact with and spaced apart from the first portion by a gap extending between the first and second portions; and
stacking and securing a second microelectronic die having second external contacts to the heat transfer unit such that the first die is between the interposer substrate and the second die, wherein the second microelectronic die has a second planform shape the same as the first planform shape when viewed in the stacking direction,
wherein the first external contacts of the first die and the second external contacts of the second die are aligned with the gap and in electrical contact, and
wherein the heat transfer unit has a thickness equal to or greater than a thickness of the first die and a thickness of the second die.

2. The method of claim 1 , further comprising applying an underfill to the front side of the interposer substrate before positioning the first die on the front side of the interposer substrate.

3. The method of claim 1 wherein the heat transfer unit is a first heat transfer unit and the gap is a first gap, and wherein the method further comprises:
attaching a second heat transfer unit to the front side of the interposer substrate between the first die and the interposer substrate, the second heat transfer unit having a third portion, a fourth portion, and a second gap between the third and fourth portions;
securing the first die to the second heat transfer unit such that the first external contacts of the first die are aligned with the second gap.

4. The method of claim 1 wherein:
the first portion comprises a first base and a first fin integrally connected with the first base, the second portion comprises a second base and a second fin integrally connected with the second base, and wherein the first and second bases are generally planar and the first and second fins extend generally normal to the first and second bases, respectively; and
securing a heat transfer unit to the first die comprises attaching the first and second portions to a back side of the first die.

5. The method of claim 1 wherein:
securing the heat transfer unit to the first die comprises using an adhesive to secure the heat transfer unit to the first die; and
securing the second die to the heat transfer unit comprises using an adhesive to secure the heat transfer unit to the second die.

6. The method of claim 1 wherein the heat transfer unit is a first heat transfer unit and the gap is a first gap, and wherein the method further comprises:
attaching a second heat transfer unit to a back side of the second die, the second heat transfer unit having a third portion, a fourth portion, and a second gap between the third and fourth portions; and
securing a third microelectronic die having third external contacts to the second heat transfer unit such that the third external contacts of the third die and the second external contacts of the second die are aligned with the second gap and in electrical contact.

7. A method of assembling a microfeature device assembly, comprising:
attaching a first heat transfer unit to an interposer substrate having terminals, the first heat transfer unit having a first portion and a second portion, wherein the second portion is out of mechanical contact with and spaced apart from the first portion by a first gap extending between the first and second portions, wherein at least a portion of the terminals are aligned with the first gap;
securing a first microelectronic die having integrated circuitry and first external contacts to the first heat transfer unit, wherein the first external contacts at a front side of the first die are aligned with the first gap and electrically coupled to at least a portion of the terminals on the interposer substrate;
attaching a second heat transfer unit to a back side of the first die, the second heat transfer unit having a third portion, a fourth portion, and a second gap between the third and fourth portions such that at least a portion of the second external contacts at the back side of the first die are aligned with the second gap; and
securing a second microelectronic die having integrated circuitry and second external contacts to the second heat transfer unit in a stacked arrangement with the first die, wherein the second external contacts at a front side of the second die are aligned with the second gap and electrically coupled to at least a portion of the first external contacts at the back side of the first die,
wherein the first and second microelectronic dies have the same planform shape when viewed in the stacking direction, and
wherein the first heat transfer unit has a first thickness and the second heat transfer unit has a second thickness, and wherein the first thickness and the second thickness are equal to or greater than thicknesses of the individual first die and second die.

8. The method of claim 7 wherein:
securing the first heat transfer unit to the interposer substrate comprises coupling first and second portions to the front side of the interposer substrate such that a first base and a second base of the first and second portions, respectively, are generally planar and a first and a second fin of the first and second portions, respectively, extend generally normal to the first and second bases; and
attaching the second heat transfer unit to the back side of the first die comprises coupling the third and fourth regions to the back side of the die such that a third base and a fourth base of the third and fourth portions, respectively, are generally planar and a third and a fourth fin of the third and fourth portions, respectively, extend generally normal to the third and fourth bases.

9. The method of claim 7 wherein:
securing the first die to the first heat transfer unit comprises using an adhesive to attach the first heat transfer unit to a front side of the first die;
attaching the second heat transfer unit to the back side of the first die comprises attaching the second heat transfer unit using an adhesive; and
securing the second die to the second heat transfer unit comprises using an adhesive to attach the second heat transfer unit to a back side of the second die.

10. A method of assembling a microfeature device assembly, comprising:
attaching a first microelectronic die to an interposer substrate having terminals, the first die having a first perimeter and including first external contacts electrically coupled to corresponding terminals;
stacking a second microelectronic die having second external contacts on the first die such that the second external contacts at a front side of the second die are electrically coupled to first external contacts at a back side of the first die, wherein the second microelectronic die has a second perimeter the same as the first perimeter when viewed in the stacking direction; and
positioning a heat transfer unit between the first and second dies, wherein the heat transfer unit is composed of a silicon material having a higher thermal conductivity than silicon of the first and second microelectronic dies,
wherein the heat transfer unit includes a first portion and a second portion, and wherein the second portion is out of mechanical contact with and spaced apart from the first por

Assignees

• Akram Salman
• Hembree David R
• Micron Technology Inc

Inventors

• Akram Salman
• Hembree David R

Classifications

• H10W90/722

  between stacked chips · CPC title

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W90/288

  characterised by arrangements for thermal management of the stacked chips · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title

• H10W72/9226

  with via interconnections · CPC title