Processes to pattern small features for advanced patterning needs

Patent metadata

Field	Value
Publication number	US-9960038-B2
Application number	US-201113335357-A
Country	US
Kind code	B2
Filing date	Dec 22, 2011
Priority date	Dec 27, 2010
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.

First claim

We claim:

1. A method of forming a microelectronic structure, said method comprising:
providing a wafer stack comprising a substrate having a surface, an optional intermediate layer adjacent said substrate surface, an undercuttable layer adjacent said substrate surface or optional intermediate layer, when present, and an imaging layer adjacent said undercuttable layer;
patterning said imaging layer to yield a pattern;
transferring said pattern into said undercuttable layer, wherein said transferring yields a first plurality of T-shaped structures on said substrate surface, or on an intermediate layer on said substrate surface, said T-shaped structures each comprising:
an upright leg having an upper portion and a lower portion joined by opposing vertical sidewalls that are generally perpendicular to said substrate surface, said lower portion contacting said substrate surface or intermediate layer; and
a generally horizontal section being adjacent said upper portion, and generally perpendicular to said vertical sidewalls, said generally horizontal section comprising an upper surface and a lower surface joined by opposing endwalls, wherein each of said vertical sidewalls and said lower surface cooperatively define a first set of undercut areas;

filling said first set of undercut area with a selectively etchable composition; and
removing said T-shaped structures to yield a first plurality of undercut-formed features on said substrate surface or intermediate layer, when present, wherein said undercut-formed features each have a width of from about 1 to about 100 nm.

2. The method of claim 1 , wherein said patterning comprises:
exposing said imaging layer to light to yield light-exposed portions of the imaging layer; and
contacting said imaging layer with a developer after light exposure so as to remove said light-exposed portions.

3. The method of claim 2 , said undercuttable layer being developer-soluble, wherein said contacting removes portions of said undercuttable layer adjacent said light-exposed portions of the imaging layer to yield said T-shaped structures.

4. The method of claim 1 , wherein said undercut areas each have a width defined as the greatest distance from said vertical sidewall to a plane defined by a respective endwall of less than about 100 nm.

5. The method of claim 1 , wherein said undercut-formed features each have a width of less than about 20 nm.

6. The method of claim 1 , wherein said undercut-formed features each have a height of from about 1 to about 100 nm.

7. The method of claim 1 , wherein said filling comprises:
applying said selectively etchable composition to said stack, said selectively etchable composition flowing into said undercut areas and coating said substrate surface, or intermediate layer, when present, wherein said upright leg has a height, said selectively etchable composition being applied at an average thickness substantially equal to or greater than said height so as to contact said lower surface of said generally horizontal section of said T-shaped structure;
etching said selectively etchable composition, wherein said selectively etchable composition is substantially removed from said substrate surface, except in said undercut areas.

8. The method of claim 1 , wherein said undercuttable layer is formed from a composition comprising a compound dispersed or dissolved in a solvent system, said compound being selected from the group consisting of polymers and oligomers of polyamic acids, acrylates, methacrylates, polyesters, and mixtures thereof.

9. The method of claim 1 , wherein said selectively etchable composition comprises silicon- and/or metal-containing compounds, oxides thereof, and combinations thereof, dispersed or dissolved in a solvent system.

10. The method of claim 1 , further comprising:
forming a second undercuttable layer adjacent said substrate surface or intermediate layer, when present, at an average thickness substantially equal to or greater than the height of said first plurality of undercut-formed features;
forming said second imaging layer on said second undercuttable layer and first plurality of undercut formed features;
patterning said second imaging layer to yield a second pattern;
transferring said second pattern into said second undercuttable layer, wherein said transferring yields a second plurality of T-shaped structures on said substrate surface, or on an intermediate layer on said substrate surface, each of said second T-shaped structures comprising:
an upright leg having an upper portion and a lower portion joined by opposing vertical sidewalls that are generally perpendicular to said substrate surface, and a core corresponding to said first plurality of undercut-formed features, said lower portion contacting said substrate surface or intermediate layer; and
a generally horizontal section being adjacent said upper portion, and generally perpendicular to said vertical sidewalls, said generally horizontal section comprising an upper surface and a lower surface joined by opposing endwalls, wherein each of said vertical sidewalls and said lower surface cooperatively define a second set of undercut areas.

11. The method of claim 10 , further comprising:
filling said second set of undercut area with a selectively etchable composition; and
removing said vertical sidewalls and generally horizontal section of each of said second plurality of T-shaped structures to yield said first plurality of undercut-formed features, and a second plurality of undercut-formed features on said substrate surface or intermediate layer, when present.

12. The method of claim 11 , wherein said filling said second set of undercut areas comprises:
applying said selectively etchable composition to said stack, said selectively etchable composition flowing into said second set of undercut areas and coating said substrate surface, or intermediate layer, when present, wherein said upright leg has a height, said selectively etchable composition being applied at an average thickness substantially equal to or greater than said height so as to contact said lower surface of said generally horizontal section of said second plurality of T-shaped structures;
etching said selectively etchable composition, wherein said selectively etchable composition is substantially removed from said substrate surface, except in said second set of undercut areas.

13. The method of claim 1 , wherein said stack further comprises an intermediate layer between said imaging layer and said undercuttable layer, said intermediate layer being selected from the group consisting of anti-reflective coatings, primer layers, etch mask layers, and combinations thereof.

14. A method of forming a microelectronic structure, said method comprising:
providing a stack comprising a substrate having a surface, an optional intermediate layer adjacent said substrate surface, and a first pattern formed in and/or on said substrate surface or intermediate layer, when present, said first pattern comprising a plurality of initial features formed on said substrate surface or intermediate layer, wherein said initial features formed on said substrate surface or intermediate layer each have a height;
forming an undercuttable layer adjacent said substrate surface or intermediate layer, when present, at an average thickness substantially equal to or greater than the height of said initial features;
forming an imaging layer on said undercuttable layer and initial features;
patterning said imaging layer to yield a second pattern;
transferring said second pattern into said undercuttable layer, wherein said transferring yields a plurali

Assignees

• Washburn Carlton Ashley
• Lamb Iii James E
• Brakensiek Nickolas L
• Lin Qin
• Wang Yubao
• Krishnamurthy Vandana
• Scott Claudia
• Brewer Science Inc

Inventors

• Washburn Carlton Ashley
• Lamb Iii James E
• Brakensiek Nickolas L
• Lin Qin
• Wang Yubao
• Krishnamurthy Vandana
• Scott Claudia

Classifications

• H10P76/4088

  Processes for improving the resolution of the masks · CPC title

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• C09D5/00

  Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced {(electrically insulating plastics, resins or waxes H01B3/30)}; Filling pastes · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/0035

  Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface · CPC title