Apparatus and methods for memory using in-plane polarization

Patent metadata

Field	Value
Publication number	US-9959920-B2
Application number	US-201715453548-A
Country	US
Kind code	B2
Filing date	Mar 8, 2017
Priority date	Mar 8, 2016
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.

First claim

The invention claimed is:

1. An apparatus, comprising:
a ferroelectric semiconductor layer having an in-plane electric polarization component switchable between a first direction and a second direction opposite to the first direction;
at least one writing electrode, in electrical communication with the ferroelectric semiconductor layer, to apply a writing voltage to the ferroelectric semiconductor layer, the writing voltage switching the in-plane electric polarization component between the first direction and the second direction; and
at least one reading electrode, in electrical communication with the ferroelectric semiconductor layer, to apply a reading voltage to the ferroelectric semiconductor layer, the reading voltage measuring a tunneling current substantially perpendicular to the polarization direction of the in-plane electric polarization component.

2. The apparatus of claim 1 , wherein the ferroelectric semiconductor layer comprises a IV-VI semiconductor.

3. The apparatus of claim 1 , wherein the ferroelectric semiconductor layer comprises SnTe.

4. The apparatus of claim 1 , wherein:
the ferroelectric semiconductor layer has a first side and a second side opposite the first side, the first side and the second side defining a length of the ferroelectric semiconductor layer; and
the at least one writing electrode comprises a first writing electrode disposed in proximity to the first side and a second writing electrode disposed in proximity to the second side.

5. The apparatus of claim 4 , wherein the length of the ferroelectric semiconductor layer is about 10 nm to about 50 nm.

6. The apparatus of claim 1 , wherein:
the ferroelectric semiconductor layer has a first surface and a second surface opposite the first surface, the first surface and the second surface defining a thickness of the ferroelectric semiconductor layer; and
the at least one reading electrode comprises a first reading electrode disposed on an edge of the first surface and a second reading electrode disposed on an edge of the second surface.

7. The apparatus of claim 6 , wherein the thickness of the ferroelectric semiconductor layer is about 0.5 nm to about 5 nm.

8. The apparatus of claim 1 , wherein the ferroelectric semiconductor layer comprises an epitaxial semiconductor layer and the at least one reading electrode comprises a graphene layer disposed in contact with the epitaxial semiconductor layer.

9. The apparatus of claim 1 , further comprising:
a current detector, operably coupled to the ferroelectric semiconductor layer, to measure the tunneling current.

10. The apparatus of claim 1 , further comprising:
an insulator layer disposed on the ferroelectric semiconductor layer, wherein the at least one writing electrode is disposed on the insulator layer.

11. A method, comprising:
applying a first writing voltage to a ferroelectric semiconductor layer having an in-plane electric polarization component, the first writing voltage causing the in-plane electric polarization component to switch between a first direction and a second direction; and
applying a reading voltage on the ferroelectric semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane electric polarization component.

12. The method of claim 11 , wherein applying the first writing voltage comprises applying the first writing voltage across a first side of the ferroelectric semiconductor layer and a second side, opposite the first side, of the ferroelectric semiconductor layer, the first side and the second side defining a length of the ferroelectric semiconductor layer.

13. The method of claim 12 , wherein applying the first writing voltage comprises applying the first writing voltage across the length of about 10 nm to about 50 nm.

14. The method of claim 11 , wherein applying the reading voltage comprises applying the reading voltage across an edge of a first surface of the ferroelectric semiconductor layer and an edge of a second surface, opposite the first surface, of the ferroelectric semiconductor layer, the first surface and the second surface defining a thickness of the ferroelectric semiconductor layer.

15. The method of claim 14 , wherein applying the reading voltage comprises applying the reading voltage across the thickness of about 0.5 nm to about 5 nm.

16. The method of claim 14 , wherein applying the reading voltage comprises applying the reading voltage via an electrode in electrical communication with the first surface of the ferroelectric semiconductor layer and a graphene layer disposed in electrical communication with the second surface of the ferroelectric semiconductor layer.

17. The method of claim 11 , further comprising:
measuring the tunneling current to determine the polarization direction of the in-plane electric polarization component.

18. The method of claim 17 , wherein measuring the tunneling current comprises:
measuring a first tunneling current when the in-plane electric polarization component is oriented in the first direction; and
measuring a second tunneling current at least 100 times greater than the first tunneling current when the in-plane electric polarization component is oriented in the second direction.

19. The method of claim 17 , wherein measuring the tunneling current comprises measuring the tunneling current at a temperature substantially equal to or greater than 150 K.

20. The method of claim 17 , wherein measuring the tunneling current comprises measuring a first tunneling current when the first writing voltage is applied on the ferroelectric semiconductor layer and the method further comprises:
removing the first writing voltage applied to the ferroelectric semiconductor layer after measuring the first tunneling current; and
measuring a second tunneling current after removing the first voltage.

21. The method of claim 11 , further comprising:
applying a second writing voltage to the ferroelectric semiconductor layer, the second writing voltage causing the polarization direction of the in-plane electric polarization component to switch between the second direction and the first direction.

22. A random access memory device, comprising:
a ferroelectric semiconductor layer having an in-plane polarization component switchable between a first direction and a second direction opposite to the first direction, the ferroelectric semiconductor layer having a thickness substantially equal to or less than 10 nm and a length of about 10 nm to about 50 nm;
an insulator layer disposed on a first surface of the ferroelectric semiconductor layer;
a writing electrode, disposed on a first side of the insulator layer, to apply a writing voltage to the ferroelectric semiconductor layer, the writing voltage switching the in-plane polarization component between the first direction and the second direction;
a ground electrode disposed on a second side, opposite the first side, of the insulator layer; and
a graphene layer, disposed on a second surface, opposite the first surface, of the ferroelectric semiconductor layer, to apply a reading voltage, with respect to the ground electrode, to the ferroelectric semiconductor layer to measure a tunneling current substantially perpendicular to the first surface of the ferroelectric semiconductor layer.

Assignees

• Liu Junwei
• Chang Kai
• Ji Shuai Hua
• Chen Xi
• Fu Liang
• Massachusetts Inst Technology

Inventors

• Liu Junwei
• Chang Kai
• Ji Shuai-Hua
• Chen Xi
• Fu Liang

Classifications

• G11C11/2275

  Writing or programming circuits or methods · CPC title

• G11C11/221 Primary

  using ferroelectric capacitors · CPC title

• H01L28/60

  Electricity · mapped topic

• G11C11/22

  using ferroelectric elements · CPC title

• H01L27/11507

  Electricity · mapped topic