Method of manufacturing a plasmon generator

Patent metadata

Field	Value
Publication number	US-9958769-B1
Application number	US-201615387066-A
Country	US
Kind code	B1
Filing date	Dec 21, 2016
Priority date	Dec 21, 2016
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A plasmon generator including a wide portion and a narrow portion is manufactured by etching an initial plasmon generator using an etching mask. The etching mask includes a first mask layer for defining the shape of one of the narrow portion and the wide portion, and a second mask layer for defining the shape of the other of the narrow portion and the wide portion. The etching mask is formed by forming a first hard mask, a second initial mask layer and a second hard mask in this order on a first initial mask layer, and etching the first and second initial mask layers by using the first and second hard masks.

First claim

What is claimed is:

1. A manufacturing method for a plasmon generator comprising a wide portion and a narrow portion protruding from the wide portion, wherein
the narrow portion has a proximal end which is a boundary with the wide portion, and a near-field light generating surface which is a protruding end,
the proximal end is located at a distance from an imaginary plane including the near-field light generating surface,
the wide portion is greater than the narrow portion in maximum width in a first direction parallel to the imaginary plane, and
the plasmon generator is configured to excite a surface plasmon from light on the wide portion, and to generate near-field light from the surface plasmon at the near-field light generating surface,
the manufacturing method comprising the steps of:
forming an initial plasmon generator;
forming an etching mask on the initial plasmon generator, the etching mask including a first mask layer for defining the shape of one of the narrow portion and the wide portion and a second mask layer for defining the shape of the other of the narrow portion and the wide portion; and
etching the initial plasmon generator into the plasmon generator by using the etching mask,
wherein the step of forming the etching mask includes the steps of:
forming a first initial mask layer;
forming a first initial hard mask on the first initial mask layer;
forming a first resist mask on the first initial hard mask by photolithography, the first resist mask being intended for defining the shape of the first mask layer;
etching the first initial hard mask into a first hard mask by using the first resist mask;
forming a second initial mask layer on the first initial mask layer and the first hard mask;
forming a second initial hard mask on the second initial mask layer;
forming a second resist mask on the second initial hard mask by photolithography, the second resist mask being intended for defining the shape of the second mask layer;
etching the second initial hard mask into a second hard mask by using the second resist mask; and
etching the first and second initial mask layers into the first and second mask layers, respectively, by using the first and second hard masks.

2. The manufacturing method for the plasmon generator according to claim 1 , wherein the first initial mask layer includes a first carbon layer.

3. The manufacturing method for the plasmon generator according to claim 1 , wherein the second initial mask layer is a second carbon layer.

4. The manufacturing method for the plasmon generator according to claim 1 , wherein
the first initial mask layer includes an etching stopper layer, and a layer to be etched which is formed on the etching stopper layer, and
the step of etching the first and second initial mask layers etches the layer to be etched and the second initial mask layer until the etching stopper layer is exposed.

5. The manufacturing method for the plasmon generator according to claim 1 , wherein the step of etching the first initial hard mask is performed by employing reactive ion etching or ion beam etching.

6. The manufacturing method for the plasmon generator according to claim 1 , wherein the step of etching the second initial hard mask is performed by employing reactive ion etching or ion beam etching.

7. The manufacturing method for the plasmon generator according to claim 1 , wherein the step of etching the first and second initial mask layers is performed by employing reactive ion etching.

8. The manufacturing method for the plasmon generator according to claim 1 , wherein the step of etching the initial plasmon generator is performed by employing ion beam etching.

9. The manufacturing method for the plasmon generator according to claim 1 , wherein
the wide portion has a first end face portion and a second end face portion located with the proximal end of the narrow portion therebetween, and
the first and second end face portions are parallel to the imaginary plane.

10. The manufacturing method for the plasmon generator according to claim 1 , wherein the narrow portion has a first side surface and a second side surface which are perpendicular to the first direction.

Assignees

• Araki Hironori
• Sasaki Yoshitaka
• Ito Hiroyuki
• Tomita Seiichiro
• Tanemura Shigeki
• Ikegawa Yukinori
• Headway Tech Inc

Inventors

• Araki Hironori
• Sasaki Yoshitaka
• Ito Hiroyuki
• Tomita Seiichiro
• Tanemura Shigeki
• Ikegawa Yukinori

Classifications

• G11B2005/0021

  Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal · CPC title

• G11B5/3169

  Working or finishing the interfacing surface of heads, e.g. lapping of heads · CPC title

• G11B5/314 Primary

  where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers (G11B5/3196 takes precedence) · CPC title

• G03F7/094

  Multilayer resist systems, e.g. planarising layers · CPC title

• G03F1/38 Primary

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title