Sensors incorporating antibodies and methods of making and using the same

US9958442B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9958442-B2
Application numberUS-201013201181-A
CountryUS
Kind codeB2
Filing dateFeb 11, 2010
Priority dateFeb 11, 2009
Publication dateMay 1, 2018
Grant dateMay 1, 2018

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may include resistivity, capacitance, impedance, and inductance. A method of detecting an antigen using sensors of the invention. A method of detecting a reaction of an analyte to a stimulus using sensors of the invention. Sensor arrays comprising multiple sensors of the invention.

First claim

Opening claim text (preview).

The invention claimed is: 1. A sensor comprising: a type III-V semiconductor material having a first edge and a second edge, an antibody contacting the type III-V semiconductor material, and an electronic circuit electrically coupled to the type III-V semiconductor material, the first edge of the type III-V semiconductor material configured for applying current to said first edge and the second edge configured for measuring voltage at said second edge to determine a first value of an electrical property of the semiconductor material, wherein the electronic circuit measures the electrical properly of the type III-V semiconductor material, such that when an antigen binds to the antibody, the electrical property has a second value different from the first value. 2. The sensor of claim 1 , wherein the antibody comprises at least one of an IgG protein, an IgA protein, an IgM protein, an IgD protein, and an IgE protein. 3. The sensor of claim 1 , wherein the antibody binds an antigen selected from the group consisting of Tumor Necrosis Factor (TNF), Human Serum Albumin (HSA), Interleukin 1β (IL 1β), Interleukin 6 (IL 6), Follicle Stimulating Hormone (FSH), Interferon γ, or Human Chorionic Gonadotropin (HCG), and combinations thereof. 4. The sensor of claim 3 , wherein the antibody comprises at least one of an IgG protein, an IgA protein, an IgM protein, an IgD protein, and an IgE protein. 5. The sensor of claim 1 , wherein the antigen is selected from a prion, a protein, an amino acid, a nucleic acid, a carbohydrate, a hormone, a chemical compound, a chemical reaction intermediate, or a combination thereof. 6. The sensor of claim 5 , wherein the antibody comprises at least one of an IgG protein, an IgA protein, an IgM protein, an IgD protein, and an IgE protein. 7. The sensor of claim 1 having a van der Pauw configuration. 8. The sensor of claim 1 , further comprising a reservoir positioned to receive an analyte therein and contact the analyte with the type III-V material. 9. The sensor of claim 1 , wherein the electrical property is resistivity. 10. The sensor of claim 9 , wherein resistivity is sheet resistivity. 11. The sensor of claim 1 , wherein the type III-V semiconductor material comprises at least one of indium arsenide (InAs), gallium arsenide (GaAs), gallium nitride (GaN), indium nitride (InN) and a combination thereof. 12. The sensor of claim 1 , further comprising an additional antibody, the antibody binding a first antigen, the additional antibody binding a second antigen. 13. The sensor of claim 1 , further comprising a well. 14. A sensor array comprising a plurality of sensors of claim 1 . 15. The sensor array of claim 14 , comprising greater than ten sensors. 16. The sensor array of claim 14 , comprising at least two different antibodies.

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What does patent US9958442B2 cover?
A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may in…
Who is the assignee on this patent?
Angelo R Michael, Brown April S, Wolter Scott, and 2 more
What technology area does this patent fall under?
Primary CPC classification G01N33/5438. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 01 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).