Simultaneous disease detection system method and devices
US-12092629-B2 · Sep 17, 2024 · US
US9958442B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9958442-B2 |
| Application number | US-201013201181-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 11, 2010 |
| Priority date | Feb 11, 2009 |
| Publication date | May 1, 2018 |
| Grant date | May 1, 2018 |
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A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may include resistivity, capacitance, impedance, and inductance. A method of detecting an antigen using sensors of the invention. A method of detecting a reaction of an analyte to a stimulus using sensors of the invention. Sensor arrays comprising multiple sensors of the invention.
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The invention claimed is: 1. A sensor comprising: a type III-V semiconductor material having a first edge and a second edge, an antibody contacting the type III-V semiconductor material, and an electronic circuit electrically coupled to the type III-V semiconductor material, the first edge of the type III-V semiconductor material configured for applying current to said first edge and the second edge configured for measuring voltage at said second edge to determine a first value of an electrical property of the semiconductor material, wherein the electronic circuit measures the electrical properly of the type III-V semiconductor material, such that when an antigen binds to the antibody, the electrical property has a second value different from the first value. 2. The sensor of claim 1 , wherein the antibody comprises at least one of an IgG protein, an IgA protein, an IgM protein, an IgD protein, and an IgE protein. 3. The sensor of claim 1 , wherein the antibody binds an antigen selected from the group consisting of Tumor Necrosis Factor (TNF), Human Serum Albumin (HSA), Interleukin 1β (IL 1β), Interleukin 6 (IL 6), Follicle Stimulating Hormone (FSH), Interferon γ, or Human Chorionic Gonadotropin (HCG), and combinations thereof. 4. The sensor of claim 3 , wherein the antibody comprises at least one of an IgG protein, an IgA protein, an IgM protein, an IgD protein, and an IgE protein. 5. The sensor of claim 1 , wherein the antigen is selected from a prion, a protein, an amino acid, a nucleic acid, a carbohydrate, a hormone, a chemical compound, a chemical reaction intermediate, or a combination thereof. 6. The sensor of claim 5 , wherein the antibody comprises at least one of an IgG protein, an IgA protein, an IgM protein, an IgD protein, and an IgE protein. 7. The sensor of claim 1 having a van der Pauw configuration. 8. The sensor of claim 1 , further comprising a reservoir positioned to receive an analyte therein and contact the analyte with the type III-V material. 9. The sensor of claim 1 , wherein the electrical property is resistivity. 10. The sensor of claim 9 , wherein resistivity is sheet resistivity. 11. The sensor of claim 1 , wherein the type III-V semiconductor material comprises at least one of indium arsenide (InAs), gallium arsenide (GaAs), gallium nitride (GaN), indium nitride (InN) and a combination thereof. 12. The sensor of claim 1 , further comprising an additional antibody, the antibody binding a first antigen, the additional antibody binding a second antigen. 13. The sensor of claim 1 , further comprising a well. 14. A sensor array comprising a plurality of sensors of claim 1 . 15. The sensor array of claim 14 , comprising greater than ten sensors. 16. The sensor array of claim 14 , comprising at least two different antibodies.
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Cross-Sectional Technologies · mapped topic
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