Composite material, heat-absorbing component, and method for producing the composite material

Patent metadata

Field	Value
Publication number	US-9957431-B2
Application number	US-201314077182-A
Country	US
Kind code	B2
Filing date	Nov 11, 2013
Priority date	Nov 11, 2013
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

In a known composite material with a fused silica matrix there are regions of silicon-containing phase embedded. In order to provide a composite material which is suitable for producing components for use in high-temperature processes for heat treatment even when exacting requirements are imposed on impermeability to gas and on purity, it is proposed in accordance with the invention that the composite material be impervious to gas, have a closed porosity of less than 0.5% and a specific density of at least 2.19 g/cm 3 , and at a temperature of 1000° C. have a spectral emissivity of at least 0.7 for wavelengths between 2 and 8 μm.

First claim

The invention claimed is:

1. A composite material comprising:
a matrix of fused silica in which regions of a phase containing silicon in elemental form have been embedded, wherein said silicon is present as a silicon alloy or as doped or undoped silicon, and wherein the phase containing said silicon in elemental form is present in a weight fraction that is at least 1% but not more than 5%,
wherein the composite material is impervious to gas, has a closed porosity of less than 0.5% and a specific density of at least 2.19 g/cm 3 , and, at a temperature of 1000° C., has a spectral emissivity of at least 0.7 for wavelengths between 2 and 8 μm measured with a path length of 1 mm; and
wherein the matrix consists essentially of fused silica having a hydroxyl group content of not more than 30 ppm by weight.

2. The composite material according to claim 1 , wherein the matrix has pores therein with a maximum pore dimension of less than 10 μm.

3. The composite material according to claim 1 ,
wherein the phase of said silicon in elemental form consists essentially of silicon having a metallic purity of at least 99.99% and wherein the matrix possesses a chemical purity of at least 99.99% SiO 2 and a cristobalite content of not more than 1%.

4. The composite material according to claim 1 ,
wherein the phase of said silicon in elemental form has non-spherical morphology with maximum dimensions of on average less than 20 μm.

5. A heat-absorbing component, comprising:
at least one surface formed from a composite material comprising a matrix of fused silica in which regions of a phase containing silicon in elemental form have been embedded wherein said silicon is present as a silicon alloy or as doped or undoped silicon, and wherein the phase containing said silicon in elemental form is present in a weight fraction that is at least 1% but not more than 5%,
wherein the composite material is impervious to gas, has a closed porosity of less than 0.5% and a specific density of at least 2.19 g/cm 3 , and, at a temperature of 1000° C., has a spectral emissivity of at least 0.7 for wavelengths between 2 and 8 μm measured with a path length of 1 mm; and
wherein the matrix consists essentially of fused silica having a hydroxyl group content of not more than 30 ppm by weight.

6. The component according to claim 5 , wherein the component is a reactor, fitting, or component configured to be used in an oxidizing or heat-treating operation, in epitaxy, or in chemical vapour deposition.

7. The component according to claim 5 , wherein the component is a plate, ring, flange, dome, crucible, or solid or hollow cylinder.

8. The composite material according to claim 1 ,
wherein the phase of said silicon in elemental form has non-spherical morphology with maximum dimensions of on average between 3 and 20 μm.

9. The heat-absorbing component according to claim 5 , wherein the matrix has pores therein with a maximum pore dimension of less than 10 μm.

10. The heat-absorbing component according to claim 5 , wherein the phase of said silicon in elemental form consists essentially of silicon having a metallic purity of at least 99.99% and wherein the matrix possesses a chemical purity of at least 99.99% SiO 2 and a cristobalite content of not more than 1%.

11. The heat-absorbing component according to claim 5 , wherein the phase of said silicon in elemental form has non-spherical morphology with maximum dimensions of on average less than 20 μm.

12. The heat-absorbing component according to claim 5 , wherein the phase of said silicon in elemental form has non-spherical morphology with maximum dimensions of on average between 3 and 20 μm.

13. The heat-absorbing component according to claim 6 , wherein the matrix has pores therein with a maximum pore dimension of less than 10 μm.

14. The heat-absorbing component according to claim 6 , wherein the phase of said silicon in elemental form consists essentially of silicon having a metallic purity of at least 99.99% and wherein the matrix possesses a chemical purity of at least 99.99% SiO 2 and a cristobalite content of not more than 1%.

15. The heat-absorbing component according to claim 6 , wherein the phase of said silicon in elemental form has non-spherical morphology with maximum dimensions of on average less than 20 μm.

16. The heat-absorbing component according to claim 6 , wherein the phase of said silicon in elemental form has non-spherical morphology with maximum dimensions of on average between 3 and 20 μm.

17. The heat-absorbing component according to claim 7 , wherein the matrix has pores therein with a maximum pore dimension of less than 10 μm.

18. The heat-absorbing component according to claim 7 , wherein the phase of said silicon in elemental form consists essentially of silicon having a metallic purity of at least 99.99% and wherein the matrix possesses a chemical purity of at least 99.99% SiO 2 and a cristobalite content of not more than 1%.

19. The heat-absorbing component according to claim 7 , wherein the phase of said silicon in elemental form has non-spherical morphology with maximum dimensions of on average less than 20 μm.

20. The heat-absorbing component according to claim 7 , wherein the phase of said silicon in elemental form has non-spherical morphology with maximum dimensions of on average between 3 and 20 μm.

Assignees

• Scheich Gerrit
• Schenk Christian
• Wessely Frank
• Tscholitsch Nadine
• Atanos Ashur J
• Neumann Christian
• Moritz Stephan
• Michel Dirk
• Heraeus Quarzglas
• Heraeus Quartz America Llc

Inventors

• Scheich Gerrit
• Schenk Christian
• Wessely Frank
• Tscholitsch Nadine
• Atanos Ashur J
• Neumann Christian
• Moritz Stephan
• Michel Dirk

Classifications

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• F27B2014/0843

  Lining or casing · CPC title

• C04B35/64

  Burning or sintering processes (C04B33/32 takes precedence {; powder metallurgy B22F}) · CPC title

• C09K5/14 Primary

  Solid materials, e.g. powdery or granular · CPC title

• C03C2214/16

  Microcrystallites, e.g. of optically or electrically active material · CPC title