High dynamic range image sensor with virtual high-low sensitivity pixels

Patent metadata

Field	Value
Publication number	US-9955090-B2
Application number	US-201615215139-A
Country	US
Kind code	B2
Filing date	Jul 20, 2016
Priority date	Jul 20, 2016
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.

First claim

What is claimed is:

1. An image sensor, comprising:
a plurality of photodetectors arranged in semiconductor material, wherein each one of the plurality of photodetectors is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions, wherein the plurality of photodetectors are organized into virtual high-low sensitivity groupings including a first photodetector and a second photodetector;
an array of microlenses disposed over the semiconductor material, wherein each one of the microlenses is disposed over a respective one of the photodetectors, wherein a first microlens of the array of microlenses is disposed over the first photodetector, and wherein a second microlens of the array of microlenses is disposed over the second photodetector;
a plurality of attenuators disposed over the semiconductor material, wherein each one of the plurality of attenuators has a same uniform thickness and comprises a solid layer of grey material that is a semi-transparent material having no gaps or openings that has a transmittance of 10%-20%, wherein each one of the plurality of attenuators is disposed along a first optical path between the first microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators, wherein there is an absence of one of the plurality of attenuators along a second optical path between the second microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators; and
a color filter array disposed over the semiconductor material between the array of microlenses and the plurality of photodetectors in the semiconductor material, wherein the color filter array includes a plurality of color filters.

2. The image sensor of claim 1 , wherein the first and second photodetectors comprise photodiodes disposed in the semiconductor material.

3. The image sensor of claim 2 wherein a full well capacity of the first photodetector is substantially equal to a full well capacity of the second photodetector.

4. The image sensor of claim 1 , wherein the first and second photodetectors comprise single photon avalanche diodes disposed in the semiconductor material.

5. The image sensor of claim 1 , wherein the plurality of photodetectors is disposed proximate to a front side of the semiconductor material, wherein the plurality of attenuators are disposed proximate to a back side of the semiconductor material, and wherein the incident light is directed through the back side of the semiconductor material to the plurality of photodetectors.

6. The image sensor of claim 1 , further comprising a transparent oxide layer disposed over the semiconductor material, wherein the incident light directed into the second photodetector along the second optical path is directed through the transparent oxide layer.

7. The image sensor of claim 1 , wherein the first photodetector of each virtual high-low sensitivity grouping is a virtual low sensitivity photodetector of a high dynamic range pixel of the image sensor, and wherein the second photodetector of each virtual high-low sensitivity grouping is a virtual high light sensitivity photodetector of the high dynamic range pixel of the image sensor.

8. The image sensor of claim 1 , wherein the first photodetector and the second photodetector of each virtual high-low sensitivity grouping are adjacent in the semiconductor material of a pixel array.

9. The image sensor of claim 1 , wherein a first one of the plurality of color filters is disposed over the first photodetector, and a second one of the plurality of color filters is disposed over the second photodetector, wherein the first and second color filters are both the same color.

10. An imaging system, comprising:
a pixel array including a plurality of photodetectors arranged in semiconductor material, wherein each one of the plurality of photodetectors is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions, wherein the plurality of photodetectors are organized into virtual high-low sensitivity groupings including a first photodetector and a second photodetector;
an array of microlenses disposed over the semiconductor material, wherein each one of the microlenses is disposed over a respective one of the photodetectors, wherein a first microlens of the array of microlenses is disposed over the first photodetector, and wherein a second microlens of the array of microlenses is disposed over the second photodetector;
a plurality of attenuators disposed over the semiconductor material, wherein each one of the plurality of attenuators has a same uniform thickness and comprises a solid layer of grey material that is a semi-transparent material having no gaps or openings that has a transmittance of 10%-20%, wherein each one of the plurality of attenuators is disposed along a first optical path between the first microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators, wherein there is an absence of one of the plurality of attenuators along a second optical path between the second microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators;
a color filter array disposed over the semiconductor material between the array of microlenses and the plurality of photodetectors in the semiconductor material, wherein the color filter array includes a plurality of color filters;
control circuitry coupled to the pixel array to control operation of the pixel array; and
readout circuitry coupled to the pixel array to readout image data from the pixel array.

11. The imaging system of claim 10 , further comprising function circuitry coupled to the readout circuitry to store the image data readout from the pixel array.

12. The imaging system of claim 10 , wherein the first and second photodetectors comprise photodiodes disposed in the semiconductor material.

13. The imaging system of claim 12 , wherein a full well capacity of the first photodetector is substantially equal to a full well capacity of the second photodetector.

14. The imaging system of claim 10 , wherein the first and second photodetectors comprise single photon avalanche diodes disposed in the semiconductor material.

15. The imaging system of claim 10 , wherein the plurality of photodetectors is disposed proximate to a front side of the semiconductor material, wherein the plurality of attenuators are disposed proximate to a back side of the semiconductor material, and wherein the incident light is directed through the back side of the semiconductor material to the plurality of photodetectors.

16. The imaging system of claim 10 , wherein a first one of the plurality of color filters is disposed over the first photodetector, and a second one of the plurality of color filters is disposed over the second photodetector, wherein the first and second color filters are both the same color.

Assignees

• Omnivision Tech Inc

Inventors

• Yang Dajiang
• Chen Gang
• Cellek Oray Orkun
• Wang Xin
• Lu Chen-Wei
• Mao Duli
• Tai Dyson H

Classifications

• H04N25/778

  comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself · CPC title

• H04N25/585 Primary

  with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes · CPC title

• H04N25/134

  based on three different wavelength filter elements · CPC title

• H04N9/045

  Electricity · mapped topic

• H01L27/14609

  Electricity · mapped topic