US9954175B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9954175-B2 |
| Application number | US-201514820011-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 6, 2015 |
| Priority date | Nov 22, 2011 |
| Publication date | Apr 24, 2018 |
| Grant date | Apr 24, 2018 |
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A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.
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What is claimed is: 1. A field effect transistor with a carbon nanotube-graphene hybrid nano-component, comprising: a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric, wherein the carbon nanotube-graphene hybrid nano-component comprises: a quartz substrate; nanotube film deposited over the substrate to produce a layer of nanotube film, wherein the nanotube film comprises fullerene molecules; a self-assembled monolayer of amine terminated groups positioned between the quartz substrate and the nanotube film, thereby increasing nanotube adhesion on the quartz substrate; and graphene deposited over the layer of nanotube film, wherein the graphene comprises solution-suspended graphene oxide flakes doped with nitric acid; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor. 2. The field effect transistor of claim 1 , wherein the nanotube film comprises multi-wall nanotube. 3. The field effect transistor of claim 1 , wherein the nanotube film comprises a network of single wall carbon nanotubes. 4. The field effect transistor of claim 1 , wherein the carbon nanotube-graphene hybrid nano-component comprises a desired transparency. 5. The field effect transistor of claim 1 , wherein the layer of nanotube film comprises a layer of nanotube film removed of impurities from a surface thereof. 6. The field effect transistor of claim 1 , wherein the carbon nanotube-graphene hybrid nano-component comprises a carbon nanotube-graphene hybrid nano-component removed of impurities from a surface thereof.
by chemical vapour deposition [CVD] · CPC title
Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title
starting from graphitic oxides · CPC title
Manufacture or treatment of nanostructures · CPC title
Single-walled · CPC title
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