Multiple transfer assembly process

Patent metadata

Field	Value
Publication number	US-9954139-B2
Application number	US-201414780409-A
Country	US
Kind code	B2
Filing date	Mar 26, 2014
Priority date	Mar 29, 2013
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

First claim

The invention claimed is:

1. A method for manufacturing a plurality of photovoltaic cells, the method comprising the steps of:
providing a photovoltaic layer on a substrate that is a wafer of size A;
cutting the photovoltaic layer thereby obtaining a plurality of photovoltaic cells, placed at a first distance from each other on top of the substrate;
attaching a stretching material to a top of the plurality of photovoltaic cells;
stretching the stretching material such that the plurality of photovoltaic cells results at a second distance from each other thereby resulting in a stretched material, wherein the second distance is greater that the first distance;
positioning the plurality of photovoltaic cells onto a target substrate that is a wafer of size B greater than size A, while the photovoltaic cells are still attached to the stretching material, after stretching the stretching material;
assembling the plurality of photovoltaic cells to the target substrate after the step of positioning the plurality of photovoltaic cells onto the target substrate; and
removing the stretched material from the plurality of photovoltaic cells after the step of positioning and before the step of assembling;
wherein the plurality of photovoltaic cells are attached to the stretching material and stretched from the initial size A of value 2 inches, 4 inches, 6 inches, or 8 inches to a respective larger size B of value 4 inches, 6 inches, 8 inches, or 12 inches.

2. The method of claim 1 , wherein the step of assembling the plurality of photovoltaic cells to the target substrate comprises bonding the plurality of photovoltaic cells to the target substrate.

3. The method of claim 2 , wherein the step of assembling further comprises bond preparation steps prior to bonding.

4. The method of claim 1 , wherein the target substrate is a semiconductor substrate and comprises contacts to the plurality of photovoltaic cells.

5. The method of claim 1 , further comprising the step of:
cutting the target substrate so as to realize a plurality of solar cell assemblies, each solar cell assembly comprising one of the plurality of photovoltaic cells.

6. The method of claim 5 , further comprising the step of:
assembling the plurality of solar cell assemblies on a heat sink.

7. The method of claim 1 , wherein the photovoltaic cells of the plurality of photovoltaic cells are multi junction III-V concentrator photovoltaic cells.

8. The method of claim 7 , wherein the multi junction III-V concentrator photovoltaic cells are formed on a semiconductor substrate.

9. The method of claim 8 , wherein the multi junction III-V concentrator photovoltaic cells have a thickness of several micrometers.

10. The method of claim 2 , wherein bonding the plurality of photovoltaic cells to the target substrate comprises direct bonding or metal bonding the plurality of photovoltaic cells to the target substrate.

11. The method of claim 3 , wherein the bond preparation steps comprise at least one of the following steps:
deposition of a conductive glue on at least one of the plurality of photovoltaic cells or the target substrate;
deposition of an adhesive on at least one of the plurality of photovoltaic cells or the target substrate;
deposition of a conductive intermediate layer on at least one of the plurality of photovoltaic cells or the target substrate; and
surface preparation by plasma treatment or chemical mechanical polishing.

12. The method of claim 8 , wherein the semiconductor substrate comprises GaAs, InP, Ge or Si, and wherein the method further comprises removal of the semiconductor substrate and separation of the photovoltaic cells.

13. The method of claim 9 , wherein the multi junction III-V concentrator photovoltaic cells have a thickness below 10 μm.

Assignees

• Soitec Silicon On Insulator
• Fraunhofer Ges Forschung

Inventors

• Krause Rainer
• Aulnette Cecile
• Mazaleyrat Eric
• Dimroth Frank
• Guiot Eric

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H10P90/1916

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10P72/7442

  Separation by peeling · CPC title

• H10P72/7434

  used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate · CPC title

• H10P72/7432

  used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title