Thin film transistor substrate and display using the same

Patent metadata

Field	Value
Publication number	US-9954014-B2
Application number	US-201615245944-A
Country	US
Kind code	B2
Filing date	Aug 24, 2016
Priority date	Dec 28, 2015
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

First claim

What is claimed is:

1. A thin film transistor substrate comprising:
a first thin film transistor;
a second thin film transistor;
a first storage capacitor electrode;
an oxide layer covering the first thin film transistor and the second thin film transistor, and exposing the first storage capacitor electrode;
a nitride layer on the oxide layer and covering the first storage capacitor electrode;
a second storage capacitor electrode on the nitride layer, wherein the second storage capacitor electrode overlaps with the first storage capacitor electrode;
a planar layer covering the first thin film transistor, the second thin film transistor and the second storage capacitor electrode; and
a pixel electrode on the planar layer,
wherein the first thin film transistor includes:
a first semiconductor layer;
a first gate electrode overlapping with middle portions of the first semiconductor layer;
a first source electrode contacting a first side of the first semiconductor layer;
a first drain electrode contacting a second side of the first semiconductor layer;
a first pixel contact hole exposing the first drain electrode by penetrating the nitride layer and the oxide layer; and
an auxiliary drain electrode contacting the first drain electrode via the first pixel contact hole, and

wherein the pixel electrode contacts the auxiliary drain electrode via a second pixel contact hole exposing the auxiliary drain electrode by penetrating the planar layer.

2. The thin film transistor substrate according to claim 1 , wherein the auxiliary drain electrode is a part of the same layer as the second storage capacitor electrode, and includes the same material as the second storage capacitor electrode.

3. The thin film transistor substrate according to claim 1 , wherein the second thin film transistor is a switching element for selecting a pixel, and
wherein the first thin film transistor is a driving element for supplying video data to the pixel selected by the second thin film transistor.

4. The thin film transistor substrate according to claim 1 , wherein the oxide layer has thickness of at least 3,000 Å, and
wherein the nitride layer has a thickness of 500 Å to 3,000 Å.

5. The thin film transistor substrate according to claim 1 , wherein the first thin film transistor has a top gate structure and the second thin film transistor has a bottom gate structure.

6. The thin film transistor substrate according to claim 1 , further comprising:
a gate insulating layer covering the first semiconductor layer;
a second gate electrode on the gate insulating layer;
an intermediate insulating layer covering the first gate electrode and the second gate electrode;
a second semiconductor layer including an oxide semiconductor material overlapping the second gate electrode on the intermediate insulating layer; and
a second source electrode and a second drain electrode on the second semiconductor layer,
wherein the first semiconductor layer includes a polycrystalline semiconductor material,
wherein the first gate electrode overlaps with the first semiconductor layer on the gate insulating layer, and
wherein the second thin film transistor includes the second semiconductor layer, the second gate electrode, the second source electrode and the second drain electrode.

7. The thin film transistor substrate according to the claim 6 , wherein the first storage capacitor electrode is on the intermediate insulating layer.

8. The thin film transistor substrate according to the claim 6 , wherein the first storage capacitor electrode is a part of the same layer as the second source electrode and the second drain electrode, and includes the same material as the second source electrode and the second drain electrode.

9. The thin film transistor substrate according to claim 1 , further comprising a display area and a non-display area,
wherein the second thin film transistor is in the display area and the first thin film transistor and the first storage capacitor electrode (ST 1 ) are in the non-display area.

10. A thin film transistor substrate comprising:
a first thin film transistor (TFT);
a second TFT;
a first storage capacitor electrode;
an oxide layer disposed on the first and second TFTs and the first storage capacitor electrode;
a second storage capacitor electrode over the oxide layer, wherein the second storage capacitor electrode overlaps with the first storage capacitor electrode;
a planar layer disposed on the first and second TFTs and the second storage capacitor electrode;
a pixel electrode on the planar layer;
a first semiconductor layer including a polycrystalline semiconductor material;
a gate insulating layer covering the first semiconductor layer;
a first gate electrode overlapping with the first semiconductor layer on the gate insulating layer;
a second gate electrode on the gate insulating layer;
an intermediate insulating layer covering the first gate electrode and the second gate electrode;
a second semiconductor layer including an oxide semiconductor material overlapping the second gate electrode on the intermediate insulating layer;
a first source electrode and a first drain electrode on the intermediate insulating layer; and
a second source electrode and a second drain electrode on the second semiconductor layer,
wherein the first TFT includes the first semiconductor layer, the first gate electrode, the first source electrode, and the first drain electrode, and
wherein the second TFT includes the second semiconductor layer, the second gate electrode, the second source electrode, and the second drain electrode.

11. The thin film transistor substrate according to claim 10 , wherein
the first source electrode contacts a first side of the first semiconductor layer,
the first drain electrode contacts a second side of the first semiconductor layer, and
the pixel electrode contacts the first drain electrode via a pixel contact hole exposing the first drain electrode by penetrating the planar layer and the oxide layer.

12. The thin film transistor substrate according to claim 10 , wherein the second TFT is a switching element for selecting a pixel, and the first TFT is a driving element for supplying video data to the pixel selected by the second TFT.

13. The thin film transistor substrate according to claim 10 , wherein the oxide layer has a thickness of at least 3,000 Å.

14. The thin film transistor substrate according to claim 10 , wherein the first TFT has a top gate structure and the second TFT has a bottom gate structure.

15. The thin film transistor substrate according to the claim 10 , wherein the first storage capacitor electrode is on the intermediate insulating layer.

16. The thin film transistor substrate according to the claim 15 , wherein the first storage capacitor electrode is a part of the same layer as the second source electrode and the second drain electrode, and includes the same material as the second source electrode and the second drain electrode.

17. The thin film transistor substrate according to claim 10 , further comprising a display area and a non-display area, wherein the second TFT is in the display area and the first TFT and the first storage capacitor electrode are in the non-display area.

18. A method of forming a thin film transistor substrate having two different types of thin film transistors, the method comprising:
forming a first thin film transistor (TFT) having a top gate structure;
forming a second TFT disposed next to the first TFT, the second TFT having a bottom gate structure;

Assignees

• Lg Display Co Ltd

Inventors

• Noh Soyoung
• Jeon Jinchae
• CHOI Seungchan
• Lee Junho
• Lee Youngjang
• Ryu Sungbin
• Kim Kitae
• Cho Bokyoung
• YOON Jeanhan
• Chung Uijin
• Lee Jihye
• Kim Eunsung
• Shin Hyunsoo
• Moon Kyeongju
• Kim Hyojin
• Kim Wonkyung
• Lee Jeihyun
• Je Soyeon

Classifications

• H01L27/1248 Primary

  Electricity · mapped topic

• H01L27/3258

  Electricity · mapped topic

• H01L27/1251

  Electricity · mapped topic

• H01L27/1225

  Electricity · mapped topic

• H01L27/1255

  Electricity · mapped topic