Adhesive resin compostition for bonding semiconductors and adhesive film for semiconductors

Patent metadata

Field	Value
Publication number	US-9953945-B2
Application number	US-201515030525-A
Country	US
Kind code	B2
Filing date	Nov 17, 2015
Priority date	Nov 17, 2014
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

The present invention relates to an adhesive resin composition for bonding semiconductors, including: a (meth)acrylate-based resin including more than 17% by weight of (meth)acrylate-based repeating units containing epoxy-based functional groups; an epoxy resin having a softening point of more than 70° C.; and a phenol resin having a softening point of more than 105° C., wherein the weight ratio of the (meth)acrylate-based resin is 0.48 to 0.65 relative to the total weight of the (meth)acrylate-based resin, the epoxy resin, and the phenol resin, an adhesive film for semiconductors obtained from the resin composition, a dicing die-bonding film including an adhesive layer that includes the adhesive film for semiconductors, a semiconductor wafer including the dicing die-bonding film, and a dicing method for the semiconductor wafer using the dicing die-bonding film.

First claim

What is claims:

1. An adhesive resin composition for bonding semiconductors, comprising:
a (meth)acrylate-based resin including more than 17% by weight of (meth)acrylate-based repeating units containing epoxy-based functional groups;
an epoxy resin having a softening point of more than 70° C.; and
a phenol resin having a softening point of more than 105° C.,
wherein a weight ratio of the (meth)acrylate-based resin is 0.48 to 0.65 relative to a total weight of the (meth)acrylate-based resin, the epoxy resin, and the phenol resin.

2. The adhesive resin composition for bonding semiconductors according to claim 1 ,
wherein the (meth)acrylate-based resin including more than 17% by weight of (meth)acrylate-based repeating units containing epoxy-based functional groups has a glass transition temperature of −10° C. to 20° C.

3. The adhesive resin composition for bonding semiconductors according to claim 1 ,
wherein the (meth)acrylate-based resin includes 17% to 35% by weight of (meth)acrylate-based repeating units containing epoxy-based functional groups.

4. The adhesive resin composition for bonding semiconductors according to claim 1 ,
wherein the (meth)acrylate-based resin including more than 17% by weight of (meth)acrylate-based repeating units containing epoxy-based functional groups is a (meth)acrylic acid ester polymer including more than 17% by weight of (meth)acrylate-based repeating units containing epoxy-based functional groups.

5. The adhesive resin composition for bonding semiconductors according to claim 1 , wherein a softening point of the epoxy resin is 70° C. to 120° C.

6. The adhesive resin composition for bonding semiconductors according to claim 1 , wherein a softening point of the phenol resin is 105° C. to 150° C.

7. The adhesive resin composition for bonding semiconductors according to claim 1 , wherein the phenol resin includes one or more selected from the group consisting of bisphenol A novolac resin having a softening point of 105° C. to 130° C. and biphenyl novolak resin having a softening point of 105° C. to 130° C.

8. The adhesive resin composition for bonding semiconductors according to claim 1 , wherein the weight ratio of the phenol resin relative to the epoxy resin is 0.8 to 1.2.

9. The adhesive resin composition for bonding semiconductors according to claim 1 , further comprising a curing agent and a curing catalyst.

10. The adhesive resin composition for bonding semiconductors according to claim 9 ,
wherein the curing agent includes one or more selected from the group consisting of an amine-based curing agent, a phenolic curing agent, and an acid anhydride-based curing agent, and
the curing catalyst includes one or more selected from the group consisting of phosphorus-based compounds, boron-based compounds, phosphorus-boron-based compounds, and imidazole-based compounds.

11. The adhesive resin composition for bonding semiconductors according to claim 1 ,
wherein the content of an inorganic particle in the adhesive resin composition for bonding semiconductors is not more than 1% by weight.

12. The adhesive resin composition for bonding semiconductors according to claim 1 ,
wherein after the adhesive resin composition for bonding semiconductors has been cured at 100° C. to 200° C. for 0.2 to 5 h, the melt viscosity measured at 130° C. may be more than 20,000 Pa·s.

13. The adhesive resin composition for bonding semiconductors according to claim 1 ,
wherein after the adhesive resin composition for bonding semiconductors has been cured at 100° C. to 200° C. for 0.2 to 5 h, the storage modulus measured at 120° C. is more than 200 MPa, and
the peel strength of the silicon substrate at 50° C. is more than 40 gf/cm 2 .

14. The adhesive resin composition for bonding semiconductors according to claim 1 ,
wherein the adhesive resin composition for bonding semiconductors has a melt viscosity at a b-stage prior to curing of 10,000 Pa·s to 30,000 Pa·s based on 110° C.

15. An adhesive film for semiconductors, comprising: a cross-linking bond between a) a phenol resin having a softening point of more than 105° C. and a (meth)acrylate-based resin including more than 17% by weight of (meth)acrylate-based repeating units containing epoxy-based functional groups; or b) a phenol resin having a softening point of more than 105° C., a (meth)acrylate-based resin including more than 17% by weight of (meth)acrylate-based repeating units containing epoxy-based functional groups and an epoxy resin having a softening point of more than 70° C.,
wherein the weight ratio of the (meth)acrylate-based resin is 0.48 to 0.65 relative to the total weight of the (meth)acrylate-based resin, the epoxy resin, and the phenol resin.

16. The adhesive film for semiconductors according to claim 15 ,
wherein the total content of inorganic particles remaining in the adhesive film for semiconductors is not more than 1% by weight.

17. The adhesive film for semiconductors according to claim 15 ,
wherein the melt viscosity of the adhesive film for semiconductors measured at 130° C. is more than 20,000 Pa·s.

18. The adhesive film for semiconductors according to claim 15 ,
wherein the storage modulus of the adhesive film for semiconductors measured at 120° C. is more than 200 MPa, and the peel strength of the silicon substrate at 50° C. is more than 40 gf/cm 2 .

19. A dicing die-bonding film comprising: a base film; a pressure-sensitive adhesive layer that is formed on the base film; and an adhesive layer that is formed on the pressure-sensitive adhesive layer and includes the adhesive film for semiconductors of claim 15 .

20. The dicing die-bonding film according to claim 19 , wherein the pressure-sensitive adhesive layer includes a UV (ultraviolet) curable pressure-sensitive adhesive or a heat curable pressure-sensitive adhesive.

Assignees

• Lg Chemical Ltd

Inventors

• Kim Hee Jung
• Kim Jung Hak
• Kim Se Ra
• Lee Kwang Joo

Classifications

• H10W72/5522

  comprising gold [Au] · CPC title

• H10P72/7404

  the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer · CPC title

• H10W72/075

  of bond wires · CPC title

• H10W72/07338

  hardening the adhesive by curing, e.g. thermosetting · CPC title

• H10W72/073

  of die-attach connectors · CPC title