Photomask blank, making method, and photomask

Patent metadata

Field	Value
Publication number	US-9952501-B2
Application number	US-201615255529-A
Country	US
Kind code	B2
Filing date	Sep 2, 2016
Priority date	Sep 18, 2015
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

A photomask blank comprising a transparent substrate ( 1 ), an etching stop film ( 2 ), a light-shielding film ( 3 ), and an etching mask film ( 4 ) has on the substrate side a reflectance of up to 35% with respect to exposure light. The etching stop film ( 2 ) consists of a first layer ( 21 ) which is disposed contiguous to the substrate and functions as an antireflective layer and a second layer ( 22 ) functioning as a fluorine-base dry etching-resistant layer, one of the first and second layers is a layer having compressive stress and the other is a layer having tensile stress.

First claim

The invention claimed is:

1. A photomask blank from which is produced a photomask comprising a transparent substrate and a mask pattern formed thereon including transparent regions and effectively opaque regions to exposure light, the photomask blank comprising
an etching stop film disposed contiguous to the substrate and consisting of multiple layers formed of a material which is resistant to fluorine-base dry etching and removable by oxygen-containing chlorine-base dry etching,
a light-shielding film which is disposed contiguous to the etching stop film and consists of a single layer of a silicon-containing material or multiple layers including at least one layer of a silicon-containing material, the silicon-containing material being resistant to oxygen-containing chlorine-base dry etching and removable by fluorine-base dry etching, and
an etching mask film disposed on the light-shielding film and formed of a material which is resistant to fluorine-base dry etching and removable by oxygen-containing chlorine-base dry etching,
wherein the photomask blank on the substrate side has a reflectance of up to 35% with respect to the exposure light, and
the etching stop film includes a first layer which is disposed contiguous to the substrate and functions as an antireflective layer on the substrate side and a second layer functioning as a layer highly resistant to fluorine-base dry etching, one of the first and second layers is a layer having compressive stress induced therein and the other is a layer having tensile stress induced therein.

2. The photomask blank of claim 1 wherein the reflectance is up to 30%.

3. The photomask blank of claim 1 wherein each of the layers of the etching stop film is formed of chromium alone, a chromium compound containing chromium and at least one element selected from oxygen, nitrogen and carbon, tantalum alone, or a tantalum compound containing tantalum and being free of silicon.

4. The photomask blank of claim 1 wherein each of the layers of the etching stop film is formed of chromium alone or a chromium compound containing chromium and at least one element selected from oxygen, nitrogen and carbon, and at least one of the layers has a chromium content of less than 50 at %.

5. The photomask blank of claim 1 wherein the etching stop film has a thickness of 2 to 20 nm.

6. The photomask blank of claim 1 wherein the etching stop film is disposed on the substrate to cause a warpage of up to 50 nm.

7. The photomask blank of claim 6 wherein the warpage is up to 30 nm.

8. The photomask blank of claim 1 wherein the etching mask film is formed of chromium alone or a chromium compound containing chromium and at least one element selected from oxygen, nitrogen and carbon.

9. The photomask blank of claim 1 wherein the photomask is used to transfer a fine line pattern with a line width of up to 20 nm to an object to be transcribed.

10. The photomask blank of claim 1 , further comprising an antireflective film of mono or multi-layer structure between the light-shielding film and the etching mask film, the antireflective film functioning as an antireflective layer on the side remote from the substrate.

11. The photomask blank of claim 10 wherein the antireflective film includes a layer of a transition metal/silicon compound containing a transition metal, silicon, and one or both of oxygen and nitrogen.

12. The photomask blank of claim 10 wherein the antireflective film includes a layer of chromium alone or a chromium compound containing chromium and one or both of oxygen and nitrogen.

13. A method for preparing the photomask blank of claim 1 , comprising the steps of:
forming the etching stop film on the transparent substrate,
forming the light-shielding film contiguous to the etching stop film,
heat treating the etching stop film and the light-shielding film at 260 to 500° C. for at least 4 hours, and thereafter,
forming the etching mask film on the light-shielding film.

14. A photomask comprising a transparent substrate and a mask pattern formed thereon including transparent regions and effectively opaque regions to exposure light, the mask pattern comprising
an etching stop film of multiple layers formed of a material which is resistant to fluorine-base dry etching and removable by oxygen-containing chlorine-base dry etching, and
a light-shielding film which is disposed contiguous to the etching stop film and consists of a single layer of a silicon-containing material or multiple layers including at least one layer of a silicon-containing material, the silicon-containing material being resistant to oxygen-containing chlorine-base dry etching and removable by fluorine-base dry etching,
wherein the photomask on the substrate side has a reflectance of up to 35% with respect to the exposure light, and
the etching stop film includes a first layer which is disposed contiguous to the substrate and functions as an antireflective layer on the substrate side and a second layer functioning as a layer highly resistant to fluorine-base dry etching, one of the first and second layers is a layer having compressive stress induced therein and the other is a layer having tensile stress induced therein.

Assignees

• Shinetsu Chemical Co

Inventors

• Fukaya Souichi
• Igarashi Shinichi
• Yoshii Takashi

Classifications

• G03F1/20 Primary

  Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof · CPC title

• G03F1/80

  Etching · CPC title

• G03F1/50 Primary

  Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof · CPC title

• G03F1/46

  Antireflective coatings · CPC title

• G03F1/38 Primary

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title