Non-ionic aryl ketone based polymeric photo-acid generators

US9951164B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9951164-B2
Application numberUS-201615235673-A
CountryUS
Kind codeB2
Filing dateAug 12, 2016
Priority dateAug 12, 2016
Publication dateApr 24, 2018
Grant dateApr 24, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

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Non-ionic photo-acid generating (PAG) polymerizable monomers were prepared that contain a side chain sulfonate ester of an alpha-hydroxy aryl ketone. The aryl ketone group has a perfluorinated substituent alpha to the ketone carbonyl. The sulfur of the sulfonate ester is also directly linked to a fluorinated group. PAG polymers prepared from the PAG monomers release a strong sulfonic acid when exposed to high energy radiation such as deep UV or extreme UV light. The photo-generated sulfonic acid has a low diffusion rate in an exposed resist layer subjected to a post-exposure bake (PEB) at 100° C. to 150° C., resulting in formation of good line patterns after development.

First claim

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What is claimed is: 1. A compound of formula (1): wherein Ar is a monovalent radical comprising one or more aromatic rings, L′ is a single bond or a divalent C 0 -C 10 linking group, P′ is a C 2 -C 20 monovalent radical comprising a polymerizable carbon-carbon double bond, R 1 is a monovalent perfluorinated C 1 -C 10 radical, wherein R 1 has a molecular formula consisting of elements carbon and fluorine, and Z′ is a divalent C 1 -C 10 radical having a molecular formula consisting of elements carbon, fluorine, and optionally hydrogen. 2. The compound of claim 1 , wherein P′ is wherein R 2 is a monovalent radical selected from the group consisting of hydrogen, methyl, and trifluoromethyl, Y′ is a divalent radical selected from the group consisting of  and aromatic groups comprising one or more aromatic rings, and Y′ is linked to L′. 3. The compound of claim 2 , wherein Y′ is and the compound is a methacrylate ester. 4. The compound of claim 2 , wherein Y′ is benzene-1,4-diyl: 5. The compound of claim 1 , wherein P′ is selected from the group consisting of wherein R 2 is selected from the group consisting of hydrogen, methyl, and trifluoromethyl. 6. The compound of claim 1 , wherein P′ is wherein R 2 is selected from the group consisting of hydrogen, methyl, and trifluoromethyl. 7. The compound of claim 1 , wherein P′ is wherein R 2 is selected from the group consisting of hydrogen, methyl, and trifluoromethyl. 8. The compound of claim 1 , wherein P′ is 9. The compound of claim 1 , wherein Z′ is selected from the group consisting of 10. The compound of claim 1 , wherein R 1 is selected from the group consisting of trifluoromethyl and perfluoroethyl. 11. The compound of claim 1 , wherein Ar is selected from the group consisting of 12. The compound of claim 9 , wherein the compound is selected from the group consisting of 13. A photo-acid generating polymer (PAG polymer), comprising a non-ionic PAG repeating unit of formula (8): wherein the PAG polymer has a polymer backbone, A′ is a trivalent radical comprising a pair of covalently linked carbons which are carbons of the polymer backbone, Ar is a monovalent aryl radical comprising one or more aromatic rings, L′ is a single bond or a divalent C 0 -C 10 linking group, R 1 is a monovalent perfluorinated C 1 -C 10 radical, wherein R 1 has a molecular formula consisting of elements carbon and fluorine, and Z′ is a divalent C 1 -C 10 radical consisting of elements carbon, fluorine, and optionally hydrogen. 14. The PAG polymer of claim 13 , wherein A′ is wherein R 2 is a monovalent radical selected from the group consisting of hydrogen, methyl, and trifluoromethyl, Y′ is a divalent radical selected from the group consisting of  and aromatic groups comprising one or more aromatic rings, and Y′ is linked to L′. 15. The PAG polymer of claim 14 , wherein Y′ is wherein the oxygen is linked to L′. 16. The PAG polymer of claim 14 , wherein Y′ is benzene-1,4-diyl. 17. The PAG polymer of claim 14 , wherein the PAG polymer is thermally stable in a lithographic process up to at least 130° C. 18. The PAG polymer of claim 14 , wherein the PAG repeating unit is selected from the group consisting of: and combinations thereof. 19. The PAG polymer of claim 14 , wherein the PAG polymer comprises a second repeating unit comprising an acid labile group, the acid labile group comprising a protected carboxylic acid group capable of being deprotected by an acid, and the PAG polymer is capable of chemical amplification in a lithographic process. 20. The PAG polymer of claim 19 , wherein the acid labile group of the protected carboxylic acid group is protected with an acid-labile functionality selected from the group consisting of tertiary esters, acetals, ketals, carbonates, and orthoesters. 21. A resist composition, comprising: the PAG polymer of claim 13 ; and an organic solvent, wherein the PAG polymer is dissolved in the organic solvent, and the resist composition is suitable for forming a resist pattern in a lithographic process. 22. A method, comprising: providing a layered structure comprising a resist layer disposed on a surface of a substrate, the resist layer comprising the PAG polymer of claim 13 ; pattern-wise exposing the resist layer to radiation, thereby forming an exposed resist layer; baking the exposed resist layer at about 90° C. to about 130° C. for at least 1 second, thereby forming a treated resist layer; and selectively removing a region of the treated resist layer using a developer, thereby forming a patterned resist layer. 23. The method of claim 22 , wherein the developer is an aqueous alkaline developer that selectively removes an exposed region of the treated resist layer, leaving a positive tone patterned resist layer. 24. The method of claim 22 , wherein the developer is an organic solvent developer that selectively removes a non-exposed region of the treated resist layer, leaving a negative tone patterned resist layer. 25. The method of claim 22 , wherein the radiation has a wavelength less than 300 nm.

Assignees

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Classifications

  • characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

  • of a carbon skeleton substituted by singly-bound oxygen atoms · CPC title

  • Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

  • of a carbon skeleton substituted by carboxyl groups · CPC title

  • of a carbon skeleton substituted by nitrogen atoms, not being part of nitro or nitroso groups · CPC title

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What does patent US9951164B2 cover?
Non-ionic photo-acid generating (PAG) polymerizable monomers were prepared that contain a side chain sulfonate ester of an alpha-hydroxy aryl ketone. The aryl ketone group has a perfluorinated substituent alpha to the ketone carbonyl. The sulfur of the sulfonate ester is also directly linked to a fluorinated group. PAG polymers prepared from the PAG monomers release a strong sulfonic acid when …
Who is the assignee on this patent?
IBM, Central Glass Co Ltd
What technology area does this patent fall under?
Primary CPC classification C08F220/68. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 24 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).