Hard magnetic compositions from iron oxide fines and methods for making same
US-2016343485-A1 · Nov 24, 2016 · US
US9950958B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9950958-B2 |
| Application number | US-201514851752-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 11, 2015 |
| Priority date | Mar 14, 2013 |
| Publication date | Apr 24, 2018 |
| Grant date | Apr 24, 2018 |
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A magnetoelectric effect material includes as a primary component, a polycrystalline oxide ceramic containing at least Sr, Co, and Fe. In the polycrystalline oxide ceramic, the crystal c-axis is oriented in a predetermined direction, and the degree of orientation of the c-axis is 0.2 or more by a Lotgering method. A component substrate is formed of this magnetoelectric effect material.
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The invention claimed is: 1. A ferromagnetic dielectric material in which electric polarization is induced by application of a magnetic field and in which magnetization is controlled by application of an electric field, the ferromagnetic dielectric material comprising as a primary component, a polycrystalline oxide ceramic containing at least Sr, Co, and Fe, wherein in the polycrystalline oxide ceramic, a crystal c-axis is oriented and electrically polarized perpendicular to the crystal c-axis orientation, wherein a degree of orientation of the c-axis is 0.2 or more by a Lotgering method, and wherein the polycrystalline oxide ceramic is (Sr 1-α Ba α ) 3 (Co 1-β X β ) 2 Fe 24 O 41+δ , where X represents at least one element selected from Ni, Zn, Mn, Mg, and Cu, 0≤α≤0.4, 0≤β≤0.3, and −1≤δ≤1. 2. The ferromagnetic dielectric material according to claim 1 , wherein the degree of orientation of the c-axis is 0.6 or more by the Lotgering method. 3. The ferromagnetic dielectric material according to claim 1 , wherein the crystal particles of the oxide ceramic have an anisotropic shape. 4. The ferromagnetic dielectric material according to claim 3 , wherein the crystal particles have a ratio of particle lengths in longitudinal directions to particle lengths in lateral directions of 2 or more, and the longitudinal directions are crystallographically aligned in one direction. 5. The ferromagnetic dielectric material according to claim 4 , wherein the ratio is 5 or more. 6. The ferromagnetic dielectric material according to claim 5 , wherein the ratio is 10 or more. 7. The ferromagnetic dielectric material according to claim 1 , wherein a polarity of the magnetization is changed in accordance with a polarity of the applied electric field, and when the electric field is changed from an application state to a non-application state, the polarity of the magnetization that is changed is retained. 8. The ferromagnetic dielectric material according to claim 7 , wherein an intensity of the magnetization is controllable in accordance with an intensity of the applied electric field. 9. The ferromagnetic dielectric material according to claim 1 , wherein an intensity of the magnetization is controllable in accordance with an intensity of the applied electric field. 10. The ferromagnetic dielectric material according to claim 7 , wherein when the electric field is changed from an application state to a non-application state, the polarity of the magnetization that is changed is retained. 11. The ferromagnetic dielectric material according to claim 1 , wherein the ferromagnetic dielectric material is used in an allowable temperature range of an electronic device. 12. The ferromagnetic dielectric material according to claim 11 , wherein the allowable temperature range is 300K±50K. 13. A ceramic electronic component comprising: a component substrate; and an external electrode on a surface of the component substrate, wherein the component substrate is formed of the ferromagnetic dielectric material according to claim 1 . 14. The ceramic electronic component according to claim 13 , wherein the ceramic electronic component is one of a variable inductor, a nonvolatile memory, a voltage sensor, a magnetic sensor, and a magnetic switch.
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