Resonator having distributed transconductance elements
US-9300246-B2 · Mar 29, 2016 · US
US9948236B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9948236-B2 |
| Application number | US-201614993217-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 12, 2016 |
| Priority date | Feb 25, 2014 |
| Publication date | Apr 17, 2018 |
| Grant date | Apr 17, 2018 |
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A method includes forming a resonator comprising a plurality of switched impedances spatially distributed within the resonator, selecting a resonant frequency for the resonator, and distributing two or more transconductance elements within the resonator based on the selected resonant frequency. Distributing the two or more transconductance elements may include non-uniformly distributing the two or more transconductance elements within the resonator.
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What is claimed is: 1. An apparatus comprising: a resonator comprising: a plurality of switched impedances spatially distributed within the resonator; and a corresponding plurality of transconductance elements distributed within respective distances among the switched impedances; wherein the resonator has a given desired resonant frequency and a given amplitude of response; wherein combined pairs of the switched impedances and transconductance elements have respective parasitic resonant frequencies which are higher than the given desired resonant frequency and have respective amplitudes of response which are lower than the given amplitude of response; and wherein a given distance between a given one of the switched impedances and a given one of the transconductance elements is controlled based on a relationship between an impedance value of the given switched impedance and a transconductance value of the given transconductance element. 2. The apparatus of claim 1 wherein the apparatus is a voltage controlled oscillator. 3. The apparatus of claim 2 wherein the voltage controlled oscillator comprises at least one of a wide-tuning range oscillator, a digitally controlled oscillator and a millimeter wave oscillator. 4. The apparatus of claim 1 wherein the apparatus is an active filter. 5. The apparatus of claim 4 wherein the active filter comprises at least one of a switched impedance filter, a switched capacitor transconductance filter and a programmable narrowband band select filter. 6. The apparatus of claim 1 wherein the switched impedances comprise a capacitor array. 7. The apparatus of claim 6 wherein: one or more interconnects between capacitors in the capacitor array contribute respective parasitic inductances in the resonator; and the transconductance elements are distributed within the capacitor array to reduce the parasitic inductances of the one or more interconnects. 8. The apparatus of claim 1 wherein: the transconductance elements have associated therewith different transconductance values; the switched impedances comprise capacitors having associated therewith different capacitance values; and wherein the transconductance elements are distributed within the resonator such that the transconductance values are proportional to the capacitance values. 9. The apparatus of claim 8 wherein the given distance between the given switched impedance and the given transconductance element is controlled based on a relationship between the capacitance value of the given switched impedance and the transconductance value of the given transconductance element. 10. The apparatus of claim 1 wherein: the transconductance elements have associated therewith different transconductance values; the switched impedances comprise inductors having associated therewith different inductance values; and wherein the transconductance elements are distributed within the resonator such that the transconductance values are proportional to the inductance values. 11. The apparatus of claim 10 wherein the given distance between the given switched impedance and the given transconductance element is controlled based on a relationship between the inductance value of the given switched impedance and the transconductance value of the given transconductance element. 12. The apparatus of claim 1 wherein the transconductance elements are distributed based on a target narrowband bandpass transfer function. 13. The apparatus of claim 1 wherein an operating frequency of the resonator is 20 gigahertz or greater. 14. The apparatus of claim 1 wherein physical dimensions of the apparatus are greater than 1/100 of a wavelength of the apparatus. 15. The apparatus of claim 1 wherein physical dimensions of the apparatus are greater than 1/1000 of a wavelength of the apparatus. 16. An integrated circuit comprising: a resonator comprising: a plurality of switched impedances spatially distributed within the resonator; and a corresponding plurality of transconductance elements distributed within respective distances among the switched impedances; wherein the resonator has a given desired resonant frequency and a given amplitude of response; wherein combined pairs of the switched impedances and transconductance elements have respective parasitic resonant frequencies which are higher than the given desired resonant frequency and have respective amplitudes of response which are lower than the given amplitude of response; and wherein a given distance between a given one of the switched impedances and a given one of the transconductance elements is controlled based on a relationship between an impedance value of the given switched impedance and a transconductance value of the given transconductance element. 17. A voltage controlled oscillator comprising the integrated circuit of claim 16 . 18. An active filter comprising the integrated circuit of claim 16 . 19. A method comprising: forming a resonator comprising a plurality of switched impedances spatially distributed within the resonator; and forming a plurality of transconductance elements within respective distances among the switched impedances; wherein the resonator has a given desired resonant frequency and a given amplitude of response; wherein combined pairs of the switched impedances and transconductance elements have respective parasitic resonant frequencies which are higher than the given desired resonant frequency and have respective amplitudes of response which are lower than the given amplitude of response; and wherein a given distance between a given one of the switched impedances and a given one of the transconductance elements is controlled based on a relationship between an impedance value of the given switched impedance and a transconductance value of the given transconductance element. 20. The method of claim 19 further comprising forming at least one of a voltage controlled oscillator and a resonator comprising the resonator.
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