Sealing film, organic el element, and organic el display device

US9947894B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9947894-B2
Application numberUS-201515310479-A
CountryUS
Kind codeB2
Filing dateMay 7, 2015
Priority dateMay 16, 2014
Publication dateApr 17, 2018
Grant dateApr 17, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided is a TFT substrate (substrate); a second electrode (vapor-deposited membrane) that is formed on the TFT substrate and includes a protruding portion; and a sealing membrane provided so as to cover the second electrode, wherein, when σ represents an absolute value of a stress of the sealing membrane, t represents a thickness of the sealing membrane, and P represents a sum of a product of an oblique side length and an oblique side slope in a minute region on an oblique side of the protruding portion, a value of an index N expressed by the expression (N=σ·t·P) is less than or equal to 935 MPa·μm 2 .

First claim

Opening claim text (preview).

The invention claimed is: 1. A sealing film comprising: a substrate; a first electrode, an organic electroluminescence (EL) layer, and a vapor-deposited membrane on the substrate, the vapor-deposited membrane including a protruding portion that is a second electrode; an edge cover between the first electrode and the organic EL layer; and a sealing membrane that covers the vapor-deposited membrane, wherein, when σ represents an absolute value of a stress of the sealing membrane, t represents a thickness of the sealing membrane, and P represents a sum of a product of an oblique side length and an oblique side slope in a minute region on an oblique side of the protruding portion, a value of an index N expressed by Expression (1) below is less than or equal to 935 MPa·μm 2 : N=σ·t·P   (1), an opening is provided in the edge cover that exposes the first electrode through the opening, the opening corresponds to an emissive region, the protruding portion corresponds to an end portion of the edge cover that defines the opening, the sealing membrane is defined by a stacked structure including an inorganic layer as a lowermost layer of the stacked structure and an organic layer that covers the inorganic layer, and the inorganic layer is in contact with the vapor-deposited membrane. 2. The sealing film according to claim 1 , wherein a height dimension of the protruding portion has a value within a range of 0.1 μm to 10 μm. 3. The sealing film according to claim 1 , further comprising: a first sealing membrane serving as the sealing membrane; a buffer layer that is provided to cover the first sealing membrane and includes a material having elasticity to reduce a level difference created by the protruding portion in the first sealing membrane; and a second sealing membrane provided to cover the buffer layer. 4. The sealing film according to claim 3 , wherein the buffer layer has a thickness larger than a dimension of a level difference in the first sealing membrane. 5. An organic EL element, wherein the sealing film according to claim 1 is used. 6. An organic EL display device, wherein the organic EL element according to claim 5 is used. 7. The organic EL display device according to claim 6 , comprising: an opposing substrate that opposes the substrate; and a sealing member that encapsulates the organic EL element between the substrate and the opposing substrate. 8. The organic EL display device according to claim 7 , wherein a filler layer is provided between the substrate, the opposing substrate, and the sealing member. 9. The sealing film according to claim 1 , wherein the absolute value of the stress of the sealing membrane is within a range of 200 MPa to 40M Pa, a value of thickness of the sealing membrane is within 0.1 μm to 1 μm, and a height dimension of the protruding portion has a value not less than 0.1 μm and less than 3 μm. 10. The sealing film according to claim 1 , wherein the absolute value of the stress of the sealing membrane is within a range of 200 MPa to 400 MPa, a value of thickness of the sealing membrane is within 1 μm to 3 μm, and a height dimension of the protruding portion has a value not less than 0.1 μm and less than 0.5 μm. 11. The sealing film according to claim 1 , wherein the absolute value of the stress of the sealing membrane is within a range of 200 MPa to 400 MPa, a value of thickness of the sealing membrane is within 3 μm to 5 μm, and a height dimension of the protruding portion has a value not less than 0.1 μm and less than 0.5 μm. 12. The sealing film according to claim 1 , wherein the absolute value of the stress of the sealing membrane is within a range of 50 MPa to 100 MPa, a value of thickness of the sealing membrane is within 5 μm to 10 μm, and a height dimension of the protruding portion has a value not less than 0.1 μm and less than 0.5 μm. 13. The sealing film according to claim 1 , wherein a total thickness of the inorganic layer and the organic layer is less than a height of the protruding portion.

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What does patent US9947894B2 cover?
Provided is a TFT substrate (substrate); a second electrode (vapor-deposited membrane) that is formed on the TFT substrate and includes a protruding portion; and a sealing membrane provided so as to cover the second electrode, wherein, when σ represents an absolute value of a stress of the sealing membrane, t represents a thickness of the sealing membrane, and P represents a sum of a product of…
Who is the assignee on this patent?
Sharp Kk
What technology area does this patent fall under?
Primary CPC classification H05B33/04. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 17 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).