High performance microwave dielectric systems and methods

Patent metadata

Field	Value
Publication number	US-9947861-B2
Application number	US-201414464518-A
Country	US
Kind code	B2
Filing date	Aug 20, 2014
Priority date	Aug 22, 2013
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.

First claim

What is claimed is:

1. A method for modifying the loss tangent in an electrical device, the method comprising:
operating the electrical device having a dielectric component containing a paramagnetic additive, wherein the operating subjects the dielectric component to microwave radiation; and
applying a static magnetic field to the dielectric component to modify the loss tangent in the dielectric component, wherein the dielectric component comprises Ni- and Zr-alloyed Ba(Zn 1/3 Ta 2/3 )O 3 , and wherein the magnetic field has a strength exceeding 0.1 Tesla.

2. The method of claim 1 , wherein the modification of the loss tangent is a reduction of the loss tangent.

3. The method of claim 1 , wherein the paramagnetic additive comprises at least one of a transition metal or a rare earth element.

4. The method of claim 1 , dielectric component further comprises at least one of:
Co-alloyed Ba(Zn 1/3 Nb 2/3 )O 3 ,
ZrTiO 4 —ZnNb 2 O 6 , or
BaTi 4 O 9 —BaZn 2 Ti 4 O 11 .

5. The method of claim 1 , wherein applying the static magnetic field results in modification of the spin loss properties in the dielectric component.

6. The method of claim 1 , wherein during the operating, the dielectric component is cooled to a temperature lower than 150 Kelvin.

7. The method of claim 6 , wherein the loss tangent of the dielectric component is reduced by more than a factor of 2 responsive to application of the static magnetic field.

8. The method of claim 6 , wherein the loss tangent of the dielectric component is reduced by at least two orders of magnitude responsive to application of the static magnetic field.

9. The method of claim 1 , wherein the applying the static magnetic field to the dielectric component causes paramagnetic ions of the paramagnetic additive to assume a preferential spin alignment.

10. The method of claim 1 , wherein the applying the static magnetic field to the dielectric component causes paramagnetic ions of the paramagnetic additive to attain a resonant condition.

11. A method for varying the transfer function of an electrical device, the method comprising:
operating the electrical device having a dielectric component containing a paramagnetic additive, wherein the operating subjects the dielectric component to microwave radiation; and
applying a magnetic field to the dielectric component to modify the transfer function of the electrical device, wherein the dielectric component comprises Ni- and Zr-alloyed Ba(Zn1/3Ta2/3)O3.

12. A method for reducing loss in a dielectric material, the method comprising:
determining, for paramagnetic ions in the dielectric material, a preferential spin alignment; and
applying, to the dielectric material, a static magnetic field to cause the paramagnetic ions to assume the preferential spin alignment, wherein the dielectric component comprises Ni- and Zr-alloyed Ba(Zn1/3Ta2/3)O3.

Assignees

• Newman Nathan
• Liu Lingtao
• Univ Arizona State

Inventors

• Newman Nathan
• Liu Lingtao

Classifications

• C04B35/4686

  based on phases other than BaTiO3 perovskite phase · CPC title

• H01B3/10

  metallic oxides (ceramics H01B3/12) · CPC title

• C04B2235/3251

  Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof · CPC title

• H01L43/08 Primary

  Electricity · mapped topic

• C04B2235/3284

  Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof · CPC title